SILICON SIGNAL DIODES 100 MA TYPES BV lm @ 25C Max. Ve Max. Co ter Package Package (1SEC) Outline Outline Number Part Number @ 100LA @ DV Min. (V) tray |] @ Va) (Vv) | @tr ima) PF 1N914 25 30 1INS14A 25 20 1N914B 25 20 1N916 25 20 1IN916A 25 20 1N916B 25 20 1N4148* 25 20 1N4149 25 20 1N4151 50 50 1N4152 50 30 1N4153* 50 50 1N4154 25 1N4305 50 1N4444 50 1N4446 20 1N4447 20 1N4448 20 1N4449 20 1N4454* 50 1N4531* 20 1N4532 50 1N4533 30 1N4534 50 1N4536 25 4N4727 20 1N4863 50 DA1701 30 DA1702 30 DA1703 30 DA1704 20 MA1701 30 MA1702 30 MA1703 30 D034 MA1704 20 0034 D2800 2 DO35 DZ805 12 D035 Dz806 22 D035 pb DO35 0035 0035 D035 D035 DO35 DO35 D035 D035 D035 D035 DO35 D035 D035 DO35 DO35 DO35 DO35 DO35 D034 D034 D034 D034 D034 D035 D035 D035 DO35 D035 D035 D034 D034 WINF]HLAPOWlM/]/] MBE ININ IN BIN [MOLE IN TEIN TINO TRIN [M(B ID [OLD RLS DE104 . DO35 DE110 D035 DE111 a DO35 DE112 ol D035 DE113 a D035 DE114 D035 DE115 DO35 * JAN and JANT X types available 1 Measured at 5LLA 119Silicon IN4305 Diode The 1N4305 is avery high speed silicon switching diode for com- puter circuits and general purpose applications. This oxide passivated planar diode features fast recovery time, low leakage and low capacitance. The maxi- _ mum and minimum forward voltages are specified at four forward currents from 250 uamps to 10 ma. This guaranteed, closely controlled conductance is necessary for the design of clamping circuits, logic circuits and other types of circuits that require tolerances on voltage levels. The double heatsink 1N4305 offers springless Double Heatsink Diode (DHD) 1N4305 construction, 500 mw dissipation, reduced package size, and is recommended for Ls as0 198, L250 new design. oa ie 1N4305 Ja ote Reverse Voltage 50 volts ose # 002 Sl] Average Rectified Current 150 ma CATHODE END re tuensons Forward Steady-State DC Current 200 ma Recurrent Peak Forward Current 225 ma Peak Forward Surge Current (i usec. pulse) 2000 ma Power Dissipation (25C free air) 500 mw Operating Temperature -65 to +200 c Storage Temperature -65 to +200 C electrical characteristics: (25C) (unless otherwise specified) 1N4305 Min. Max. Breakdown Voltage (Ip =5 ua) By 75 volts Forward Voltage (I1-=250 uamps) Vel 505 .575 volts (I; =I ma) V2 550 .650 volts (I, =2 ma) Ve3 .610 710 volts (1, =10 ma) Ve4 .700 850 volts Reverse Current (Vp = -50 v) Ip wl uamps Reverse Current (150C) (Vp = -50v) Ip 100 uamps Reverse Recovery Time (I, =10 ma, I,=10 ma) (Note 1) ter 4 nsec. Reverse Recovery Time ([;=10 ma, V,= -6V, R, =100 ) (Note 1) ter 2 nsec. Capacitance (V, =0 v) (Note 2) Co 2 pf Rectification Efficiency (100 mc) (Note 3) Re 45 % Note 1: Recovery time to 1 ma. 2: Capacitance as measured on Boonton Model 75A Capacitance Bridge at a signal level of 50 mv and a frequency of | mc. 3: Rectification Efficiency is defined as the ratio of DC load voltage to peak rf input voltage to the detector circuit, measured with 2.0 vrms input to the circuit. Load resistance SKQ, load capacitance 20 uuf. 229