AP9970GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 3.2m ID G 240A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220(P) S The TO-220 package is widely preferred for commercial-industrial through-hole applications. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V(Silicon Limited) 240 A ID@TC=100 Continuous Drain Current, VGS @ 10V(Silicon Limited) 170 A ID@TC=25 Continuous Drain Current, VGS @ 10V(Package Limited) 120 A 960 A 375 W 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 175 TJ Operating Junction Temperature Range -55 to 175 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.4 /W 62 /W 1 200907272 AP9970GP-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=60A - - 3.2 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=60A - 105 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=40A - 100 160 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 14 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 54 - nC 2 td(on) Turn-on Delay Time VDS=30V - 60 - ns tr Rise Time ID=40A - 200 - ns td(off) Turn-off Delay Time RG=25,VGS=10V - 180 - ns tf Fall Time RD=0.75 - 240 - ns Ciss Input Capacitance VGS=0V - 4020 6430 pF Coss Output Capacitance VDS=25V - 1280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 420 - pF Rg Gate Resistance f=1.0MHz - 2 - Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=40A, VGS=0V - 80 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 165 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9970GP-HF 320 160 240 160 V GS =5.0V 80 10V 8.0V 7.0V 6.0V V GS =5.0V T C = 175 o C 10V 8.0V 7.0V 6.0V ID , Drain Current (A) ID , Drain Current (A) T C = 25 o C 120 80 40 0 0 0 2 4 6 8 10 0 12 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 8 I D =60A V G =10V I D =40A o T A =25 C 2.0 Normalized RDS(ON) RDS(ON) (m) 6 4 1.6 1.2 2 0.8 0.4 0 2 4 6 8 -50 10 0 100 150 200 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 80 60 IS(A) 50 o V GS ,Gate-to-Source Voltage (V) T j =175 o C T j =25 o C 40 1.2 0.8 0.4 20 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 200 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9970GP-HF 12 f=1.0MHz 6000 V DS =30V V DS =36V V DS =48V 10 5000 4000 8 C iss C (pF) VGS , Gate to Source Voltage (V) I D = 40 A 6 3000 4 2000 2 1000 0 0 C oxx C rss 0 40 80 120 1 160 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 ID (A) Operation in this area limited by RDS(ON) 100us 100 1ms 10ms 100ms DC 10 o T c =25 C Single Pulse 1 Normalized Thermal Response (Rthjc) 10000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4