2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N6111 2N6109 2N6107 SYMBOL 2N6288 2N6290 2N6292 VCBO 40 60 80 VCEO 30 50 70 VEBO 5.0 IC 7.0 ICM 10 IB 3.0 PD 40 TJ, Tstg -65 to +150 JC 3.13 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150C ICEO VCE=20V (2N6111, 2N6288) ICEO VCE=40V (2N6109, 2N6290) ICEO VCE=60V (2N6107, 2N6292) IEBO VEB=5.0V BVCEO IC=100mA (2N6111, 2N6288) 30 BVCEO IC=100mA (2N6109, 2N6290) 50 BVCEO IC=100mA (2N6107, 2N6292) 70 VCE(SAT) VBE(ON) hFE hFE hFE hFE hfe fT Cob IC=7.0A, IB=3.0A VCE=4.0V, IC=7.0A VCE=4.0V, IC=2.0A (2N6107, 2N6292) VCE=4.0V, IC=2.5A (2N6109, 2N6290) VCE=4.0V, IC=3.0A (2N6111, 2N6288) VCE=4.0V, IC=7.0A VCE=4.0V, IC=0.5A, f=50kHz VCE=4.0V, IC=0.5A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz 30 30 30 2.3 20 4.0 MAX 100 2.0 1.0 1.0 1.0 1.0 3.5 3.0 150 150 150 250 UNITS V V V A A A W C C/W UNITS A mA mA mA mA mA V V V V V MHz pF R1 (10-April 2013) 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (10-April 2013) w w w. c e n t r a l s e m i . c o m