© Freescale Semiconductor, Inc., 2005. All rights reserved.
Freescale Semiconductor
Technical Data
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
Document Number: MC13820/D
Rev. 1.1, 09/2005
MC13820
Package Information
Plastic Package
Case 1345
(QFN–12)
Ordering Information
Device
Device Marking or
Operating
Temperature Range
Package
MC13820 820 QFN-12
1 Introduction
The MC13820 is a high gain LNA with extremely low
noise figure, designed for cellular, GPS and ISM band
applications. An integrated bypass switch is included to
preserve input intercept performance. The input and
output match are external to allow maximum design
flexibility. The MC13820 is fabricated using Freescale's
advanced RF BiCMOS process using the SiGe:C option
and is packaged in the QFN12 leadless package.
1.1 Features
• RF Input Frequency: 1000 MHz to 2.4 GHz
• Gain: 18 dB (typ) at 1575 MHz and 15.7 dB (typ)
at 2140 MHz
• Output 3rd Order Intercept Point (OIP3): 18.5
dBm (typ) at 1575 MHz and 19.7 dBm (typ) at
2140 MHz
• Noise Figure (NF): 1.25 dB (typ) at 1575 MHz
and 1.3 dB (typ) at 2140 MHz
• 1dB Compression Point (P1dB): -10 dBm (typ)
at 1575 MHz and -5 dBm (typ) at 2140 MHz
MC13820
Low Noise Amplifier with Bypass
Switch
Contents:
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Electrical Specifications . . . . . . . . . . . . . . . . 3
3 Application Information . . . . . . . . . . . . . . . . 10
4 Printed Circuit Board . . . . . . . . . . . . . . . . . . 23
5 Scattering Parameters . . . . . . . . . . . . . . . . . 26
6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
7 Product Documentation . . . . . . . . . . . . . . . . 36
Introduction
MC13820 Technical Data, Rev. 1.1
2Freescale Semiconductor
• Freescale’s IP3 Boost Circuitry
• Bypass Mode Included for Improved Intercept Point Performance
• Total Supply Current:
2.8 mA @ 2.7 Vdc
10 µA (typ) in Bypass Mode
• Bias Stabilized for Device and Temperature Variations
• QFN-12 Leadless Package with Low Parasitics
• SiGe Technology Ensures Lowest Possible Noise Figure
Figure 1. Simplified Block Diagram
2
1
3
456
12 11 10
8
9
7
Gnd
LNA
Out
LNA
In
Gain
Enable
VCC1
MC13820
Rbias Emit
Gnd
Logic
NC
NC NC NC
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 3
2 Electrical Specifications
Table 1. Maximum Ratings
Ratings Symbol Value Unit
Supply Voltage VCC 3.3 V
Storage Temperature Range Tstg -65 to 150 °C
Operating Ambient Temperature Range TA -30 to 85 °C
RF Input Power Prf 10 dBm
Power Dissipation Pdis 100 mW
Thermal Resistance, Junction to Case RθJC 24 C/W
Thermal Resistance, Junction to Ambient, 4 layer board RθJA 90 C/W
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Conditions and Electrical Characteristics tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤200 V, Charge Device Model (CDM) ≤450 V, and
Machine Model (MM) ≤50 V. Additional ESD data available upon request.
Table 2. Recommended Operating Conditions
Characteristic Symbol Min Typ Max Unit
RF Frequency range fRF 1000 2400 MHz
Supply Voltage VCC 2.7 2.75 3 V
Logic Voltage
Input High Voltage
Input Low Voltage
1.25
0
-
-
VCC
0.8
V
Table 3. Electrical Characteristics
(VCC = 2.75 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Insertion Gain
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.575 GHz
R1=2 kΩ, Freq=2.14 GHz
|S21|2
16
14.5
14.3
13
17.1
15.6
15.3
14.2
-
-
-
-
dB
Maximum Stable Gain and/or Maximum Available Gain1
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.575 GHz
R1=2 kΩ, Freq=2.14 GHz
MSG, MAG
21.5
19.5
20.5
19.5
22.5
20.5
21.5
19.6
-
-
-
-
dB
Minimum Noise Figure
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.575 GHz
R1=2 kΩ, Freq=2.14 GHz
NFmin
-
-
-
-
1.01
0.96
1.01
0.96
1.1
1.05
1.1
1.05
dB
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
4Freescale Semiconductor
Associated Gain at Minimum Noise Figure
R1=1.2 kΩ, Freq=1.575 GHz
R1=1.2 kΩ, Freq=2.14 GHz
R1=2 kΩ, Freq=1.575 GHz
R1=2 kΩ, Freq=2.14 GHz
Gnf
21.7
19
21.7
19
22.7
19.8
22.7
19.8
-
-
-
-
dB
1Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
, if K > 1, , if K < 1
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
1575 MHz (Refer to Figure 9)
Frequency f - 1575 - MHz
Active Gain G 17.5 18 - dB
Active Noise Figure NF - 1.25 1.4 dB
Active Input Third Order Intercept Point IIP3 -1.0 0.5 - dBm
Active Input 1dB Compression Point P1dB -11 -10 - dBm
Active Current @ 2.75 V ICC -2.83.3mA
Bypass Gain G -6.0 -5.0 - dB
Bypass Noise Figure NF - 4.8 5.2 dB
Bypass Input Third Order Intercept Point IIP3 26 27 - dBm
Bypass Current - 10 20 µA
1960 MHz (Refer to Figure 10)
Frequency f - 1960 - MHz
Active Gain G 16 16.4 - dB
Active Noise Figure NF - 1.25 1.4 dB
Active Input Third Order Intercept Point IIP3 0 1 - dBm
Active Input 1dB Compression Point P1dB -7.0 -6 - dBm
Active Current @ 2.75 V ICC -2.83.3mA
Bypass Gain G -5.0 -4 - dB
Bypass Noise Figure NF - 4.7 5.1 dB
Bypass Input Third Order Intercept Point IIP3 23 25 - dBm
Bypass Current - 10 20 µA
Table 3. Electrical Characteristics (continued)
(VCC = 2.75 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
MAG
S21
S12
---------- K K 21–±
⎝⎠
⎛⎞
=MSG S21
S12
----------
=
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 5
2140 MHz (Refer to Figure 11)
Frequency f - 2140 - MHz
Active Gain G 15.3 15.7 - dB
Active Noise Figure NF - 1.3 1.4 dB
Active Input Third Order Intercept Point IIP3 2.5 3.5 - dBm
Active Input 1dB Compression Point P1dB -6.0 -5 - dBm
Active Current @ 2.75 V ICC -2.83.2mA
Bypass Gain G -4.2 -3.2 - dB
Bypass Noise Figure NF - 3.2 3.6 dB
Bypass Input Third Order Intercept Point IIP3 22.5 24.5 - dBm
Bypass Current - 10 20 µA
2400 MHz (Refer to Figure 12)
Frequency f - 2400 - MHz
Active Gain G 13.8 14 - dB
Active Noise Figure NF - 1.49 1.6 dB
Active Input Third Order Intercept Point IIP3 3.5 4.0 - dBm
Active Input 1dB Compression Point P1dB -5.0 -4.0 - dBm
Active Current @ 2.75 V ICC -2.83.2mA
Bypass Gain G -5.0 -4.0 - dB
Bypass Noise Figure NF - 4.2 4.7 dB
Bypass Input Third Order Intercept Point IIP3 22 24 - dBm
Bypass Current - 10 20 µA
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
6Freescale Semiconductor
Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 2 kΩ)
Table 5. Truth Table
Pin Function Pin Name
Enable Disable
Low Gain High Gain Low Gain High Gain
Circuit Bias VCC1 VCC11111
Toggles Gain Mode (Active or
Bypass)
GAIN0101
Toggles LNA On/OffENABLE1100
LNA Bias VCC3 LNA Out1111
NOTES: 1. Logic state "1" equals VCC voltage. Logic state of "0" equals ground potential.
2. VCC3 is inductively coupled to LNA OUT pin
3. Minimum logic state “1” for enable and gain pins is 1.25 V.
4. Maximum logic state “0” for enable and gain pins is 0.8 V.
Maximum Stable/Available Gain and
Forward Insertion Gain vs. Frequency
Rbias is 2 kohm
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
f, Frequency (GHz)
MSG, Maximum Stable Gain; MAG,
Maximum Available Gain; |S21|2,
Forward Insertion Gain, (dB)
MSG
MAG|S21|2
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 7
Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency
(Rbias = 1.2 kΩ)
Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc
Maxim um Stable/Available Gain and
Forw ard Insertion Gain vs . Frequency
Rbias is 1.2 kohm
0
5
10
15
20
25
30
35
0.5 1.5 2.5 3.5 4.5
f, Frequency (GHz)
MSG, Maximum Stable Gain; MAG,
Maximum Available Gain; |S21|2,
Forward Insertion Gain (dB)
M
MSG
MAG
|S21|2
Maximum Stable/Available Gain and
Forward Insertion Gain vs. Icc
14
15
16
17
18
19
20
21
22
23
24
2.5 3 3.5 4 4.5 5 5.5
Icc (m A)
MSG, Maximum Stable Gain; MAG, Maximum
Available Gain; |S21|2, Forward Insertion Gain (dB)
M SG/M AG 1.575 GHz
M SG/M AG 1.96 GHz
M SG/M AG 2.14 GHz
S|21|2 1.575 GHz S|21|2 1.96 GHz
S|21|2 2.14 GHz
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
8Freescale Semiconductor
Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 2 kΩ)
Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency
(Rbias = 1.2 kΩ)
Minim um Noise Figure and Associate d Gain vs . Freque ncy Rbias = 2 kohm
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1000 1200 1400 1600 1800 2000 2200 2400
f, Frequency (MHz)
NFmin, Minimum Noise Figure
(dB)
0
5
10
15
20
25
30
Gnf, Associated Gain (dB)
Gnf
NFm i n
Minimum Noise Figure and Associated Gain vs. Frequency
Rbias = 1.2 kohm
0.98
1
1.02
1.04
1.06
1.08
1.1
1.12
1000 1200 1400 1600 1800 2000 2200 2400
f, Frequency (MHz)
NFmin, Minimum Noise
Figure (dB)
0
5
10
15
20
25
30
Gnf, Associated Gain (dB)
Gnf
NFm in
Electrical Specifications
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 9
Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit
(Rbias varied from 1.2 kΩ to 3 kΩ)
Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit
(Rbias varied from 1.2 kΩ to 3 kΩ)
Input 3rd Order Intercept Point vs. Icc
1960 MHz Application Ckt.
-6
-4
-2
0
2
4
6
1.5 2.5 3.5 4.5 5.5
Icc (mA)
Input 3rd Order Intercept
Point (dBm)
Input 3rd Order Intercept Point vs. Icc
2140 MHz Application Circuit
-2
-1
0
1
2
3
4
5
6
12345
Icc (mA)
Input 3rd Order Intercept
Point, IIP3 (dBm)
Application Information
MC13820 Technical Data, Rev. 1.1
10 Freescale Semiconductor
3 Application Information
The MC13820 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three
different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain
and Enable pins. The logic truth table is given in Table 5.
In these application examples a balance is made between the competing RF performance characteristics of
ICC, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the
input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For
a particular application or spec requirement, the matching can be changed to achieve enhanced
performance of one parameter at the expense of other parameters.
Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current
drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 kΩ
and 2 kΩ, see Table 6, Table 7, Table 8, and Table 9. These two current drain states offer variation in
intercept point, gain, and noise figure. Measurements are made at a bias of VCC = 2.75 V. Freq. spacing
for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dB. The board loss
corrections for these boards are: Input 0.16 dB, Output 0.2 dB. Gain and NF results incorporate these
corrections in order to better reflect the actual performance of the device.
3.1 1575 MHz Application
This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 6.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 11
Figure 9. 1575 MHz LNA Application Schematic
Table 6. Typical 1575 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
R1 = 1.2 kΩ, R2 = 620 Ω
Frequency f - 1575.42 - MHz
Power Gain
High Gain
Bypass
G
-
-
18
-4.7
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
20
20.8
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
2.0
25.5
-
-
dBm
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-8.0
-
-
-
dBm
2
1
3
4 5 6
12 11 10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
680
MC13820
1575 MHz LNA
L1
5.6 nH C1
22pF
C2
1 pf
L2
5.6 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC NC NC
Application Information
MC13820 Technical Data, Rev. 1.1
12 Freescale Semiconductor
Insertion Gain
High Gain
Bypass
G
-
-
18.5
-3.4
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.25
4.8
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
4.45
4.0
-
-
mA
µA
Rbias R1 Value - 1.2 - kΩ
Rstability R2 Value - 620 - Ω
Input Return Loss
High Gain
Bypass
S11
-
-
-15.5
-8.1
-
-
dB
Gain
High Gain
Bypass
S21
-
-
18.2
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-23.7
-4.4
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-13.9
-6.8
-
-
dB
R1= 2.0 kΩ, R2 = 680 Ω
Frequency f - 1575.42 - MHz
Power Gain
High Gain
Bypass
G
-
-
18
-5.0
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
18.7
21.7
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
0.5
27
-
-
dBm
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
8.2
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-10
-
-
-
dBm
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 13
Insertion Gain
High Gain
Bypass
G
-
-
18.1
-3.6
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.25
4.8
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
2.8
4.0
-
-
mA
µA
Rbias R1 Value - 2.0 - kΩ
Rstability R2 Value - 680 - Ω
Input Return Loss
High Gain
Bypass
S11
-
-
-13.5
-9.0
-
-
dB
Gain
High Gain
Bypass
S21
-
-
17.9
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-22.9
-4.3
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-10.8
-7.2
-
-
dB
Table 6. Typical 1575 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
14 Freescale Semiconductor
3.2 1960 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 17 dBm with
S11 better than -10 dB and S22 better than -10 dB at 1960 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 7.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
Figure 10. 1960 MHz LNA Application Schematic
Table 7. Typical 1960 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
R1 = 1.2 kΩ, R2 = 3.3 kΩ
Frequency f - 1960 - MHz
Power Gain
High Gain
Bypass
G
-
-
16
-4.5
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
22
20.5
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
5.5
25
-
-
dBm
2
1
3
4 5 6
12 11 10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
3.3 k
MC13820
1960 MHz LNA
L1
4.3 nH C1
33pF
C2
0.9pf
L2
2.7 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC NC NC
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 15
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10.5
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-6.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
16.8
-3.7
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.26
2.5
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
4.45
10
-
-
mA
µA
Rbias R1 Value - 1.2 - kΩ
Rstability R2 Value - 3.3 - kΩ
Input Return Loss
High Gain
Bypass
S11
-
-
-9.7
-8.7
-
-
dB
Gain
High Gain
Bypass
S21
-
-
16.6
-3.8
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-21.7
-4.2
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-14.6
-6.3
-
-
dB
R1 = 2.0 kΩ, R2 = 3.3 kΩ
Frequency f - 1960 - MHz
Power Gain
High Gain
Bypass
G
-
-
16.4
-4.0
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
17.4
21
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
1.0
25
-
-
dBm
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
16 Freescale Semiconductor
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10.4
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-6.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
16.5
-3.7
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.25
4.7
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
2.8
4.0
-
-
mA
µA
Rbias R1 Value - 2.0 - kΩ
Rstability R2 Value - 3.3 - kΩ
Input Return Loss
High Gain
Bypass
S11
-
-
-9.2
-9.8
-
-
dB
Gain
High Gain
Bypass
S21
-
-
16.6
-3.9
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-21.1
-4.0
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-25
-7.8
-
-
dB
Table 7. Typical 1960 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 17
3.3 2140 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 8.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
Figure 11. 2140 MHz LNA Application Schematic
Table 8. Typical 2140 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
R1 = 1.2 kΩ, R2 = 3.3 kΩ
Frequency f - 2140 - MHz
Power Gain
High Gain
Bypass
G
-
-
15.7
-3.4
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
20.7
16.4
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
5.0
20
-
-
dBm
2
1
3
4 5 6
12 11 10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
3.3 k
MC13820
2140 MHz LNA
L1
4.3 nH C1
33pF
C2
0.9pf
L2
2.7 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC NC NC
Application Information
MC13820 Technical Data, Rev. 1.1
18 Freescale Semiconductor
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10.7
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-5.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14.8
-3.4
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.49
3.4
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
4.45
10
-
-
mA
µA
Rbias R1 Value - 1.2 - kΩ
Rstability R2 Value - 3.3 - kΩ
Input Return Loss
High Gain
Bypass
S11
-
-
-8.5
-8.9
-
-
dB
Gain
High Gain
Bypass
S21
-
-
16.5
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-22.2
-4.5
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-12.5
-6.1
-
-
dB
R1 = 2.0 kΩ, R2 = 3.3 kΩ
Frequency f - 2140 - MHz
Power Gain
High Gain
Bypass
G
-
-
15.7
-3.2
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
19.7
21.3
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
3.5
24.5
-
-
dBm
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 19
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10.7
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-5.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14.8
-3.5
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.3
3.2
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
2.8
10
-
-
mA
µA
Rbias R1 Value - 2.0 - kΩ
Rstability R2 Value - 3.3 - kΩ
Input Return Loss
High Gain
Bypass
S11
-
-
-13.7
-17.1
-
-
dB
Gain
High Gain
Bypass
S21
-
-
15.5
-3.0
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-20.9
-3.3
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-12.1
-14.6
-
-
dB
Table 8. Typical 2140 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
20 Freescale Semiconductor
3.4 2400 MHz Application
This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with
S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz
to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 9.
The component values can be changed to enhance the performance of a particular parameter, but usually
at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and
ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3.
Figure 12. 2400 MHz LNA Application Schematic
Table 9. Typical 2400 MHz LNA Demo Board Performance
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
R1 = 1.2 kΩ, R2 = 3.3 kΩ
Frequency f - 2400 - MHz
Power Gain
High Gain
Bypass
G
-
-
14
-3.8
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
21
19
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
7.0
22
-
-
dBm
2
1
3
4 5 6
12 11 10
8
9
7
Gnd
LNA
OUT
R1
2 k
LNA IN
Gain
Enable
Vcc1
R2
3.3 k
MC13820
2400 MHz LNA
L1
2.7 nH C1
33pF
C2
0.6pf
L2
2.4 nH
C3
33 pf
C4
.01uf
Rbias
Vcc3
C5
.01uf
C6
33 pf
Logic
NC
NC NC NC
Application Information
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 21
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10.7
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-4.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14
-3.8
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.55
3.8
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
4.45
10
-
-
mA
µA
Rbias R1 Value - 1.2 - kΩ
Rstability R2 Value - 3.3 - kΩ
Input Return Loss
High Gain
Bypass
S11
-
-
-8.5
-8.9
-
-
dB
Gain
High Gain
Bypass
S21
-
-
14.5
-4.1
-
-
dB
Reverse Isolation
High Gain
Bypass
S12
-
-
-20.2
-4.0
-
-
dB
Output Return Loss
High Gain
Bypass
S22
-
-
-11
-7.0
-
-
dB
R1 = 2.0 kΩ, R2 = 3.3 kΩ
Frequency f - 2400 - MHz
Power Gain
High Gain
Bypass
G
-
-
14
-3.6
-
-
dB
Output Third Order Intercept Point
High Gain
Bypass
OIP3
-
-
18.5
20
-
-
dBm
Input Third Order Intercept Point
High Gain
Bypass
IIP3
-
-
4.0
24
-
-
dBm
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Application Information
MC13820 Technical Data, Rev. 1.1
22 Freescale Semiconductor
Out Ref P1dB
High Gain
Bypass
P1dBout
-
-
10
-
-
-
dBm
In Ref P1dB
High Gain
Bypass
P1dBin
-
-
-4.0
-
-
-
dBm
Insertion Gain
High Gain
Bypass
G
-
-
14
-4.0
-
-
dBm
Noise Figure
High Gain
Bypass
NF
-
-
1.49
4.2
-
-
dB
Current Drain
High Gain
Bypass
ICC
-
-
2.8
10
-
-
mA
µA
Rbias R1 Value - 2.0 - kΩ
Rstability R2 Value - 3.3 - kΩ
Input Return Loss
High Gain
Bypass
S11 -
--10
-9.7
-
-
dB
Gain
High Gain
Bypass
S21 -
-14
-3.6
-
-
dB
Reverse Isolation
High Gain
Bypass
S12 -
--20
-3.8
-
-
dB
Output Return Loss
High Gain
Bypass
S22 -
--10
-9.1
-
-
dB
Table 9. Typical 2400 MHz LNA Demo Board Performance (continued)
(Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.)
Characteristic Symbol Min Typ Max Unit
Printed Circuit Board
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 23
4 Printed Circuit Board
Figure 13. Front Side
Figure 14. Back Side
Q1
L1
L2
C2
C3
C4 C1
R2
R1
NOT E: CO MPON EN TS C5 AND C6 ARE LOCATED ON THE BACK OF T HE BOARD
MBC13720/21
V2R1
C5 C6
Printed Circuit Board
MC13820 Technical Data, Rev. 1.1
24 Freescale Semiconductor
Table 10. Bill of Materials
Component Value Case Manufacturer Comments
1575 MHz
C1 22 pF 402 Murata Input match
C2 1.0 pF 402 Taiyo Yuden Output match
C3 33 pF 402 Murata RF bypass
C4 .01 µF 402 Murata Low freq bypass
C5 .01 µF 402 Murata Low freq bypass
C6 33 pF 402 Murata RF bypass
L2 5.6 nH 1005 CoilCraft Output match
L1 5.6 nH 1005 CoilCraft Input match
R1 1.2 or 2 kΩ402 KOA Bias for 4.45 or 2.8 mA
R2 680 Ω402 KOA Stability
Q1 MC13820 QFN-12 Freescale
1960 MHz
C1 33 pF 402 Murata Input match
C2 0.9 pF 402 Taiyo Yuden Output match
C3 33 pF 402 Murata RF bypass
C4 .01 µF 402 Murata Low freq bypass
C5 .01 µF 402 Murata Low freq bypass
C6 33 pF 402 Murata RF bypass
L1 4.3 nH 1005 CoilCraft Input match
L2 2.7 nH 1005 Coilcraft Output match
R1 1.2 or 2 kΩ402 KOA Bias for 4.45 or 2.8 mA
R2 3.3 kΩ402 KOA Stability
Q1 MC13820 QFN-12 Freescale
2140 MHz
C1 33 pF 402 Murata Input match
C2 0.9 pF 402 Taiyo Yuden Output match
C3 33 pF 402 Murata RF bypass
C4 .01 µF 402 Murata Low freq bypass
C5 .01 µF 402 Murata Low freq bypass
C6 33 pF 402 Murata RF bypass
L1 4.3 nH 1005 CoilCraft Input match
L2 2.7 nH 1005 CoilCraft Output match
Printed Circuit Board
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 25
R2 3.3 kΩ402 KOA Stability
R1 1.2 or 2 kΩ402 KOA Bias for 4.45 or 2.8 mA
Q1 MC13820 QFN-12 Freescale
2400 MHz
C1 33 pF 402 Murata Input match
C2 0.6 pF 402 Taiyo Yuden Output match
C3 33 pF 402 Murata RF bypass
C4 .01 µF 402 Murata Low freq bypass
C5 .01 µF 402 Murata Low freq bypass
C6 33 pF 402 Murata RF bypass
L1 2.7 nH 1005 CoilCraft Input match
L2 2.4 nH 1005 CoilCraft Output match
R2 1.2 or 2 kΩ402 KOA Bias for 4.45 or 2.8 mA
R1 3.3 kΩ402 KOA Stability
Q1 MC13820 QFN-12 Freescale
Table 10. Bill of Materials (continued)
Component Value Case Manufacturer Comments
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
26 Freescale Semiconductor
5 Scattering Parameters
Table 11. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain = 2.75 V, Enable = 2.75 V, Rbias resistor R1 = 2 kΩ), ICC = 2.6 mA
f
GHz)
S11 S21 S12 S22
|S11|∠ φ|S11|∠ φ|S11|∠ φ|S11|∠ φ
0.7 0.852 -29.22 7.029 142.03 0.021 75.16 0.956 -14.42
0.8 0.836 -32.9 7.279 137.43 0.024 73.13 0.946 -15.76
0.9 0.803 -36.02 7.034 133.48 0.027 70.95 0.966 -19.49
1 0.814 -42.84 6.856 127 0.029 66.71 0.887 -17.77
1.1 0.782 -42.6 6.687 125.21 0.031 68.53 0.924 -22.03
1.2 0.772 -45.55 6.29 122.03 0.034 65.83 0.898 -23.58
1.3 0.752 -47.28 6.242 116.95 0.036 65.66 0.897 -25.56
1.4 0.718 -50.24 6.082 114.12 0.039 64.76 0.912 -26.44
1.5 0.672 -52.29 5.696 112.14 0.04 61.29 0.943 -30.51
1.6 0.688 -49.98 5.662 107.49 0.043 61.9 0.882 -35.18
1.7 0.695 -53.95 5.499 104.8 0.044 60.95 0.865 -35.67
1.8 0.686 -54.86 5.348 101.62 0.047 60.42 0.866 -36.55
1.9 0.653 -57.19 5.334 97.81 0.05 59.47 0.892 -41.25
2 0.661 -57.81 5.098 95.37 0.052 60.14 0.863 -42.78
2.1 0.646 -60.4 5.035 90.65 0.058 56 0.844 -46.94
2.2 0.639 -62.48 4.766 86.29 0.058 52.65 0.818 -49.01
2.3 0.628 -61.9 4.575 86.75 0.059 51.95 0.8 -50.61
2.4 0.608 -63.13 4.529 82.12 0.06 52.38 0.78 -51.67
2.5 0.61 -63.96 4.366 79.31 0.063 53.62 0.779 -52.93
2.6 0.609 -65.96 4.251 77.33 0.067 51.2 0.777 -54.38
2.7 0.637 -69.48 4.307 75.4 0.072 50.86 0.811 -57.38
2.8 0.57 -74.63 4.168 68.94 0.073 46.36 0.756 -63.02
2.9 0.536 -75.03 3.933 65.73 0.075 42.72 0.716 -62.94
3 0.515 -75.6 3.819 62.83 0.074 42.14 0.697 -64.16
3.1 0.506 -75.28 3.665 61.56 0.074 39.24 0.683 -63.26
3.2 0.489 -73.7 3.572 60.5 0.07 39.17 0.702 -63.69
3.3 0.483 -74.54 3.523 58.09 0.07 43.49 0.716 -66.71
3.4 0.487 -76.91 3.495 55.25 0.075 46.63 0.714 -70.44
3.5 0.488 -78.25 3.484 51.93 0.082 45.9 0.699 -74.6
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 27
Table 12. Bypass Mode Scattering Parameters
((VCC1 and VCC3 = 2.75V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1= 2 kΩ), ICC = 3.0 µA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S11|∠ φ|S11|∠ φ|S11|∠ φ
0.7 0.549 -51.13 0.578 17.83 0.583 18.83 0.578 -41.21
0.8 0.511 -53.94 0.596 13.17 0.6 14.15 0.542 -42.25
0.9 0.47 -55.73 0.608 8.45 0.614 10.08 0.524 -45.13
1 0.458 -59.65 0.615 3.3 0.617 5.12 0.455 -43.82
1.1 0.434 -58.46 0.624 1.11 0.628 2.52 0.453 -46.74
1.2 0.421 -59.33 0.629 -2.37 0.635 -0.96 0.42 -48.02
1.3 0.404 -59.6 0.634 -5.19 0.639 -3.8 0.407 -48.56
1.4 0.384 -61.06 0.633 -8.02 0.639 -6.66 0.394 -47.62
1.5 0.36 -62.48 0.638 -10.97 0.641 -9.5 0.388 -49.7
1.6 0.362 -59.49 0.638 -13.09 0.643 -11.89 0.374 -53.61
1.7 0.367 -60.21 0.639 -15.43 0.643 -14.26 0.353 -53.66
1.8 0.363 -60.18 0.64 -17.77 0.645 -16.58 0.335 -53.3
1.9 0.35 -63.26 0.645 -20.27 0.649 -19.08 0.348 -53.86
2 0.355 -63.18 0.639 -22.63 0.643 -21.39 0.327 -54.83
2.1 0.335 -66.36 0.64 -24.42 0.643 -23.2 0.342 -57.82
2.2 0.332 -65.87 0.64 -26.93 0.645 -25.56 0.324 -60.95
2.3 0.322 -63.97 0.64 -28.95 0.644 -27.79 0.309 -63.15
2.4 0.32 -63.46 0.639 -31.11 0.642 -30.01 0.294 -64.43
2.5 0.319 -63.28 0.632 -33.88 0.638 -32.07 0.279 -64.25
2.6 0.323 -63.96 0.627 -35.14 0.633 -33.64 0.274 -62.49
2.7 0.354 -65.66 0.64 -36.78 0.645 -35.11 0.297 -62.47
2.8 0.317 -73.59 0.637 -40.56 0.643 -38.92 0.282 -72.82
2.9 0.296 -74.61 0.622 -42.77 0.629 -41.1 0.245 -73.08
3 0.284 -74.6 0.616 -44.14 0.621 -42.65 0.23 -70.36
3.1 0.283 -72.89 0.616 -45.7 0.619 -43.94 0.236 -67.03
3.2 0.274 -72.04 0.618 -47.38 0.622 -45.84 0.245 -68.8
3.3 0.269 -74.74 0.618 -50.21 0.623 -48.62 0.238 -75.51
3.4 0.265 -77.34 0.609 -52.62 0.615 -51.03 0.212 -77.5
3.5 0.261 -76.71 0.603 -54.36 0.607 -52.96 0.194 -77.94
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
28 Freescale Semiconductor
Table 13. Active Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band grounded, Gain and Enable = 2.75 V, Rbias resistor R1 = 1.2 kΩ, ICC = 4.8 mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S11|∠ φ|S11|∠ φ|S11|∠ φ
0.7 0.784 -32.04 10.275 132.74 0.021 72.91 0.92 -15.77
0.8 0.765 -35.9 10.162 127.59 0.022 71.83 0.907 -16.82
0.9 0.721 -39 9.646 122.89 0.025 68.97 0.923 -20.31
1 0.724 -45.16 9.184 116.28 0.027 67.34 0.842 -18.21
1.1 0.692 -44.87 8.773 114.36 0.029 67.52 0.877 -22.39
1.2 0.678 -47.17 8.23 110.64 0.033 67.56 0.846 -23.69
1.3 0.662 -48.64 7.98 106.21 0.034 66.62 0.845 -25.47
1.4 0.626 -51.75 7.638 103.36 0.037 64.27 0.858 -25.98
1.5 0.576 -53.11 7.185 100.91 0.039 63.47 0.893 -29.67
1.6 0.594 -49.59 6.972 96.71 0.041 62.78 0.835 -34.46
1.7 0.599 -52.85 6.691 93.81 0.042 62.14 0.816 -34.49
1.8 0.594 -54.14 6.444 90.92 0.044 62.34 0.817 -35.3
1.9 0.56 -56.18 6.34 87.3 0.049 60.88 0.843 -39.86
2 0.568 -57.13 6.029 85.12 0.05 60.42 0.817 -41.18
2.1 0.548 -58.62 5.885 80.96 0.054 57.9 0.798 -45.47
2.2 0.546 -59.79 5.568 76.96 0.056 56.61 0.774 -46.98
2.3 0.543 -59.25 5.318 76.8 0.057 54.83 0.761 -48.63
2.4 0.532 -59.9 5.189 72.95 0.059 54.79 0.742 -49.56
2.5 0.527 -61.63 4.979 70.13 0.062 53.59 0.741 -50.7
2.6 0.529 -62.78 4.816 68.35 0.064 53.44 0.743 -52
2.7 0.551 -67.21 4.839 66.22 0.072 52.3 0.768 -55.57
2.8 0.485 -70.76 4.649 60.62 0.072 47.22 0.715 -60.12
2.9 0.454 -71.28 4.382 57.65 0.074 44.14 0.68 -60.09
3 0.434 -70.94 4.207 55.39 0.072 42.21 0.666 -60.36
3.1 0.433 -67.82 4.048 54.44 0.068 41.81 0.669 -60.12
3.2 0.436 -66.18 3.936 52.8 0.069 43.96 0.674 -61.04
3.3 0.437 -68.3 3.847 50.72 0.072 47.68 0.684 -63.24
3.4 0.437 -72.51 3.81 48.36 0.078 46.81 0.687 -66.49
3.5 0.433 -73.15 3.767 45.48 0.082 45.71 0.676 -70.55
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 29
Table 14. Bypass Mode Scattering Parameters
(VCC1 and VCC3 = 2.75 V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1 = 1.2 kΩ, ICC = 3 µA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S11|∠ φ|S11|∠ φ|S11|∠ φ
0.7 0.556 -44.11 0.573 20.27 0.573 20.39 0.595 -42.94
0.8 0.514 -46.8 0.591 15.11 0.591 15.3 0.549 -43.78
0.9 0.475 -49.46 0.6 10.38 0.599 10.66 0.511 -43.02
1 0.459 -50.05 0.618 6.77 0.617 6.98 0.479 -46.66
1.1 0.427 -50.66 0.623 3.34 0.621 3.51 0.462 -47.17
1.2 0.412 -51.99 0.633 -0.34 0.632 -0.19 0.43 -49.25
1.3 0.391 -52.85 0.635 -3.09 0.634 -2.98 0.421 -49.35
1.4 0.379 -53.91 0.637 -6.45 0.636 -6.18 0.395 -50.53
1.5 0.368 -53.94 0.638 -8.92 0.638 -8.66 0.384 -51.37
1.6 0.358 -54.86 0.64 -11.49 0.639 -11.33 0.374 -52.64
1.7 0.352 -55.36 0.641 -14.09 0.64 -13.92 0.358 -53.9
1.8 0.346 -55.58 0.641 -16.37 0.641 -16.17 0.345 -54.87
1.9 0.341 -55.61 0.641 -18.68 0.641 -18.47 0.334 -56.07
2 0.334 -56.07 0.638 -20.97 0.639 -20.85 0.321 -56.45
2.1 0.329 -56.92 0.635 -23.12 0.633 -22.91 0.312 -56.2
2.2 0.319 -57.96 0.636 -24.75 0.636 -24.45 0.314 -57.47
2.3 0.308 -57.61 0.64 -26.81 0.64 -26.59 0.306 -59.76
2.4 0.299 -57.89 0.641 -29.13 0.64 -28.92 0.295 -61.28
2.5 0.293 -59.25 0.64 -31.4 0.642 -31.04 0.291 -62.5
2.6 0.285 -60.49 0.636 -33.55 0.636 -33.11 0.277 -62.84
2.7 0.279 -62.48 0.636 -35.59 0.635 -35.51 0.272 -65.72
2.8 0.274 -64.02 0.634 -37.84 0.633 -37.69 0.258 -67.26
2.9 0.267 -66.58 0.629 -39.74 0.63 -39.66 0.247 -67.95
3 0.27 -68.28 0.623 -42.19 0.623 -42.06 0.232 -68.55
3.1 0.264 -70.53 0.618 -43.48 0.616 -43.19 0.241 -64.77
3.2 0.261 -72.44 0.617 -45.42 0.616 -45.19 0.241 -69.24
3.3 0.26 -73.31 0.616 -47.61 0.615 -47.35 0.227 -74.2
3.4 0.26 -73.49 0.613 -49.49 0.613 -49.26 0.209 -76.39
3.5 0.265 -73.26 0.61 -52.15 0.61 -51.84 0.179 -78.56
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
30 Freescale Semiconductor
Table 15. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 1.2 kΩ, ICC = 4.8 mA)
f
(GHz)
NFmin
(dB)
Gamma Opt Rn
(Ω)
rn
(Ω)
GNF
(dB) K
Mag Ang
1 1.11 0.27 25.3 14 0.28 26.21 0.63
1.575 0.99 0.29 40.8 13 0.26 22.63 0.74
1.9 0.96 0.30 46.9 12.5 0.25 20.83 0.70
2.14 0.96 0.30 50.1 12.5 0.25 19.8 0.78
2.4 0.97 0.30 54.0 12 0.24 18.3 0.89
Table 16. Noise Parameters
(VCC = 2.7 V, Enable = 2.75 V, Rbias = 2 kΩ, ICC = 2.8 mA)
f
(GHz)
NFmin
(dB)
Gamma Opt Rn
(Ω)
rn
(Ω)
GNF
(dB) K
Mag Ang
1 1.16 0.23 27.6 15.5 0.31 26.09 0.48
1.575 1.02 0.35 39.0 15 0.3 22.57 0.56
1.9 0.97 0.37 46.2 14 0.28 20.81 0.53
2.14 0.96 0.37 49.7 14 0.28 19.79 0.61
2.4 0.95 0.37 54.1 13.5 0.27 18.3 0.77
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 31
Figure 15. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 kΩ
Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 kΩ
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
1.575 1.02 0.30/_38.2 13.5 0.74
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
1.575 0.97 0.34/_39.1 17.0 0.56
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
32 Freescale Semiconductor
Figure 17. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 kΩ
Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 kΩ
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
1.9 0.96 0.30/_46.9 12.5 0.68
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
1.9 0.97 0.37/_46.2 14.0 0.50
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 33
Figure 19. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 kΩ
Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 kΩ
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
2.1 0.96 0.30/_50.1 12.5 0.76
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
2.1 0.96 0.37/_49.7 14.0 0.58
Scattering Parameters
MC13820 Technical Data, Rev. 1.1
34 Freescale Semiconductor
Figure 21. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 kΩ
Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 kΩ
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
2.3 0.96 0.30/_52.8 12.0 0.85
(shaded regions are potentially unstable)
f(GHz) NFmin Gamma-Opt Rn (Ω)K
2.3 0.95 0.38/_53 13.5 0.70
Packaging
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 35
6 Packaging
Figure 23. Outline Dimensions for QFN-12
(Case Outline 1345-01, Issue A)
LASER MARK FOR PIN 1
IDENTIFICATION IN
THIS AREA
3
B
C
0.1
2X
2X
C0.1
A
3
G
M
M
1.0 1.00
0.05
C0.1
C0.05
CSEATING PLANE
5
DETAIL G
VIEW ROTATED 90° CLOCKWISE
(0.5)
(0.24)
0.8 0.75
0.00
PIN 1 BACKSIDE IDENTIFIER
DETAIL M
DETAIL S
8X (0.777)
4X (0.25)
DETAIL S
PIN 1 BACKSIDE IDENTIFIER
(90°)
2X
2X
0.39
0.31
0.1
0.0
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
3. THE COMPLETE JEDEC DESIGNATOR FOR THIS
PACKAGE IS: HF-PQFP-N.
4. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE FOR
REFERENCE ONLY.
5. COPLANARITY APPLIES TO LEADS, CORNER LEADS,
AND DIE ATTACH PAD.
N
EXPOSED DIE
ATTACH PAD
10
3
1
12
0.95
8X 0.5
9
7
64
M
0.1 C
M
0.05 C
A B
12X 0.75
0.5
C
0.1 A B
VIEW M-M
DETAIL M
PIN 1 IDENTIFIER
1.25
0.95
1.25 C
0.1 A B
12X 0.3
0.18
4
CORNER CONFIGURATION
DETAIL N
(0.18)
4X
(1.177)
8X
(45°)
4X
0.065
0.015
12X (R0.09)
3X
Product Documentation
MC13820 Technical Data, Rev. 1.1
36 Freescale Semiconductor
7 Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com.
Table 17 summarizes revisions made to this document since Rev. 1.0 was released.
Table 17. Revision History
Location Revision
Section 1.1, “Features”, on page 1 Updated text.
Ta b l e 1 Maximum Ratings Updated Thermal Resistance, Junction to Case and added Thermal
Resistance, Junction to Ambient, 4 layer board.
Ta b l e 2 Recommended Operating Conditions Updated Logic Voltage.
Ta b l e 5 Truth Table Added notes.
Ta b l e 6 Typical 1575 MHz LNA Demo Board
Performance
Updated Current Drain Typ numbers.
Ta b l e 7 Typical 1960 MHz LNA Demo Board
Performance
Updated Current Drain.
Ta b l e 8 Typical 2140 MHz LNA Demo Board
Performance
Updated to R1 = 2.0 kΩ, R2 = 3.3 kΩ.
Ta b l e 9 Typical 2400 MHz LNA Demo Board
Performance
Updated to R1 = 2.0 kΩ, R2 = 3.3 kΩ.
Ta b l e 1 0 Bill of Materials Updated 1575 MHz R1, 1960 MHz R1, 2140 MHz R1, and 2400 MHz R2.
Figure 13 Front Side of Printed Circuit Board Updated.
NOTES
MC13820 Technical Data, Rev. 1.1
Freescale Semiconductor 37
Document Number: MC13820/D
Rev. 1.1
09/2005
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