NX Home | AboutNxXP | News | Careers | Investors | NXP Newsletter | NXP Blog | Contact Global! English ww Find and Buy Vv Explore Ww Get VW MyNKP i) Products Applications Support Cross reference Home Products MOSFETs Standard MOSFETs & PMCcssxP [ Favorite 2) Print 30 P-channel MOSFET with pre-biased MPM transistor = oo o i ; ; ; ; ; ; ; y Overview Parametrics Package /Packing | Quality Documentation Ordering Design suppor | Showy all o BAP wen. Oirect downloads P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET aia _ a technology and WPM Resistor-Equipped Transistor (RET) together in a leadless rik a = _ medium power DFM 2020-6 (8071118) Surface-Mounted Device (SMD) plastic = = Bi fa & Datasheet (pdf) r eM) p = | Ul I cos ssuesensneseeeeceescensaree MMe cceeede acka B. = db All application notes (zip) P 4 a ne db All documentation (ip Featires and benefits uu vuscuriasssratssseitusssiartesnmnestesteessenseee All documents (23) Fee Mee Trench MOSFET technology e NPM transistor builtin bias resistors e Small and leadless ultra thin SMD plastic package: 2x 2x 0.65 mm e Exposed drain pad for excellent thermal conduction Applications Quick ordering e Charging switch for portable devices PMCBSXP 115 e High-side load switch e USB port overvoltage protection e Power management in batter-driven portables Distributor In Stock e Hard disk and computing power management Region | -- select your region -- | ORE | Ordersamples | SeriesOFN2020 MOSFETs (i) This site uses cookies. Why? Click here to find out more. a fet=t- * Parametric search all Standard MOSFETs Latest videos All information on this product information page is subject to the subsequent disclaimers: Power MOSFETs and thermal General product disclaimer modelling - NXP Quick Le... Quality and reliability disclaimer at is FPAK? - xP uick Barming 41... NXP Semiconductors - 10 things you didnt Know abo... 10 things you did not know about power MOSFETs Show more Farametrics of this product Rosen drain-source on-state resistance Veg =-4.OM Ip=-26A TP = 25C 2 85 110 mo Vos | drain-source voltage | T)= 25 C | | | 30 | il Ves | Gate-source voltage | T)= 25C | -|2 | | 43 | 7 Ib | drain current 2 Veg=-4.5Vi Tamp= 25 Cits 597 oad of Vceo collector-emitter voltage Tamb = 25 C: open base : 2 50 : vf lo output current i i 100 i mA Ri : bias resistor 1 : ! 3. ! 4i ! B.1 ! Ko Ra : bias resistor 2 : : : 47 : : ko Similar products Series OFN2020 MOSFETs * Parametric search all Standard MOSFETs Parametrics series Package cpa | Feel 7" PMC85xP 115 PMCSSXP db sottd18 po | 2b Reflow _Soldering_Profile | sf oes | Active | : IK 9240 563 99415 DFN2020-6 aun (5071119) Finning information | E emitter c G 5 2 A hase 6 2 4 | 3 D drain tt 4 5 Source t 8 _ 5 G qate ra les 5 C collector | 9 3 | | ; rallector Transparent top view e 6 D g D drain 017aea396 Giuality, reliability & chemical content EUSCH RoHS ae COMPLIANT PMCSSXP = PMCSSXP115 PMCaSKP D) Always Pb-free 4636.0 759 139968 1 1 | & Download all documentation @ip} | JL PMCSSxP 30 P-channel MOSFET with pre-biased NPNtransistor = = Data sheet pdt 2013-05-15 Power MOSFET single-shot and repetitive avalanche + J, AN10273 | ae " Applicationnote paf 2010-03-17 Be eee etna ruggedness rating db ANT OBT4 LFPAK MOSFET thermal design guide * Application note pdt 2011-01-27 db ANI1113 : LFPAK MOSFET thermal design guide - Part 2 * Application note : pat : 2011-11-16 db AN11158 | Wrderstanding power MOSFET data sheet parameters * Application note | pat | 2014-02-04 : Failure signature of Electrical Qverstress on Power 4 a db ANI1243 MOSFETs Application note pdt 2012-10-24 db ANT1 304 | MOSFET load switch PCB with thermal measurement * Application note | pdt | 2013-01-28 & AN11261 Using RC Thermal Models * = Applicationnote pat 2014-05-19 fb ANI1599 _ Using power MOSFETs in parallel = Applicationnote pdf 2015-07-07 db 939775017444 | Discretes for portable devices and mobile handsets + Brochure | pdt | 2013-09-04 Jb PMCS5S8P_MAP_ Product Quality | PMCG5#P MAP Product Quality # Quality document | pdt | 2015-01-31 db PMC85xP_MXP_Product Reliability | PMCSS4P MAP Product Reliability + Quality document | pat | 2015-01-31 db F5017 631 | Discretes Semiconductors Selection Guide 2015 * selection guide | pdt | 2015-01-08 : NaP's Power MOSFET Selection Guide 2014: Smaller, + : : db 7601 7590 selection guide | pdt | 2014-09-11 Eee cee ceeennemnenee faster, cooler b TNOOO08 | Power MOSFET frequent asked questions and answers * | Technical note | pat | 2015-06-07 | DFM 2020-6; reel pack, standard orientation, 12NC endin * | | & S0T1118_115 ate ees : Packing pdf 2012-11-07 { Reflaw_Soldering_Profile _ Reflow Soldering Profil * = Reflowsoldering = pdf 2013-09-30 4 soti118_fr Footprint for reflow soldering SOT1118 * | Reflow soldering pat 2010-07-13 plastic thermal enhanced ultra thin small outline . ; | 2 7, 01117 8_po package: no leads; 6 terminals; body 2x 2% 0.65 mm Outline drawing pat 2010-03-30 Ordering & availability PMCS5XP 934066288115 = PMCESXP115 = NA _ Digikey 6427 4 ogor201s = (Buy) = (Order samples mas Mouser 3000 oooveos (Buy) : Electronics aa Farnell FU 2687 4 ogorents = Buy] | Europe 7 _ ASIA Element14. 3 4 owor2o1s = Buy] Sample Sample orders normally take 2-4 days for delivery. 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