Type 2N2222A
Geometry 0400
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N2222A
Generic Part Number:
2N2222A
REF: MIL-PRF-19500/255
Features:
General-purpose transistor for
switching and amplifier applica-
tons.
Housed in TO-18 case.
Also available in chip form using
the 0400 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/255 which
Semicoa meets in all cases.
The Typ values are actual batch
averages for Semicoa.
Radiation Graphs available.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 50 V
Collector-Base Voltage VCBO 75 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current, Continuous IC800 mA
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-18
Data Sheet No. 2N2222A
OFF Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCE = 50 V
Collector-Base Cutoff Current
VCB = 60 V
Emitter-Base Cutoff Current
VEB = 4 V
nA
nA
V
Electrical Characteristics
TC = 25oC unless otherwise specified
V
V
nA
V(BR)CBO 75 ---120
V(BR)CEO 50 ---65
V(BR)EBO 6.0 ---7.0
ICES --- 503.0
IEBO --- 100.5
ICBO1 --- 102.0
ON Characteristics
Min
Typ
Max
Unit
DC Current Gain
IC = 100 µA, VCE = 10 V hFE1 50 180 --- ---
IC = 1.0 mA, VCE = 10 V hFE2 75 200 325 ---
IC = 10 mA, VCE = 10 V hFE3 100 200 --- ---
IC = 150 mA, VCE = 10 V (pulse test) hFE4 100 200 300 ---
IC = 500 mA, VCE = 10 V (pulse test) hFE5 30 75 --- ---
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test) VCE(sat)1 --- 0.1 0.3 V dc
IC = 500 mA, IB = 50 mA (pulse test) VCE(sat)2 --- 0.3 1.0 V dc
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test) VBE(sat)1 0.6 0.85 1.2 V dc
IC = 500 mA, IB = 50 mA (pulse test) VBE(sat)2 --- 1.0 2.0 V dc
Small Signal Characteristics
Symbol
Min
Typ
Max
Unit
Short Circuit Forward Current Transfer Ratio
IC = 1 mA, VCE = 10 V, f = 1kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
pF
COBO --- 4.5 8
pF
AC hFE 50 240 ---
CIBO --- 17.5 25
---
Switching Characteristics
Symbol
Min
Typ
Max
Unit
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
ns
tOFF --- 175 300 ns
tON --- 14 35