TC74HC4066AP/AF/AFN/AFT
2009-05-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC4066AP,TC74HC4066AF,TC74HC4066AFN,TC74HC4066AFT
Quad Bilateral Switch
The TC74HC4066A is a high speed CMOS QUAD BILATERAL
SWITCH fabricated with silicon gate C2MOS technology.
It consists of four independent high speed switches capable of
controlling either digital or analog signals while maintaining the
CMOS low power dissipation.
Control input (C) is provided to control the switch. The switch
turns ON while the C input is high, and the switch turns OFF
while low.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 7 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Low ON resistance: RON = 50 Ω (typ.) at VCC = 9 V
• High degree of linearity: THD = 0.05% (typ.) at VCC = 5 V
• Pin and function compatible with 4066B
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC4066AP
TC74HC4066AF
TC74HC4066AFN
TC74HC4066AFT
Weight
DIP14-P-300-2.54 : 0.96 g (typ.)
SOP14-P-300-1.27A : 0.18 g (typ.)
SOL14-P-150-1.27 : 0.12 g (typ.)
TSSOP14-P-0044-0.65A : 0.06 g (typ.)
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Pin Assignment IEC Logic Symbol
Truth Table
Control Switch Function
H On
L Off
VCC
9
1C
4C
4I/O
8
14
13
12
11
10
1I/O 1
2
3
4
5
6
7
2I/O
2C
3C
GND
(VSS)
4O/I
3O/I
3I/O
(top view)
1O/I
2O/I
(5)
(6)
(4)
2C
×1
3C
2I/O
(12)
(8)
(11)
4C
3I/O
(3)
(9)
(10)
2O/I
3O/I
4O/I
4I/O
(13)
(1)
1C
1I/O (2) 1O/I
1 1
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range VCC −0.5 to 13 V
Control input voltage VIN −0.5 to VCC + 0.5 V
Switch I/O voltage VI/O −0.5 to VCC + 0.5 V
Control input diode current IIK ±20 mA
I/O diode current IOK ±20 mA
Switch through Current IOUT ±25 mA
DC VCC/ground current ICC ±50 mA
Power dissipation PD 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW
Storage temperature Tstg −65 to 150 °C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage VCC 2 to 12 V
Control input voltage VIN 0 to VCC V
Switch I/O voltage VI/O 0 to VCC V
Operating temperature Topr −40 to 85 °C
Input rise and fall time tr, tf
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
0 to 400 (VCC = 6.0 V)
0 to 250 (VCC = 10.0 V)
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Electrical Characteristics
DC Characteristics
Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol Test Condition VCC
(V) Min Typ. Max Min Max
Unit
High-level control
input voltage VIHC ―
2.0
4.5
9.0
12.0
1.50
3.15
6.30
8.40
―
―
―
―
―
―
―
―
1.50
3.15
6.30
8.40
―
―
―
―
V
Low-level control
input voltage VILC ―
2.0
4.5
9.0
12.0
―
―
―
―
―
―
―
―
0.50
1.35
2.70
3.60
―
―
―
―
0.50
1.35
2.70
3.60
V
VIN = VIHC
VI/O = VCC to GND
II/O ≤ 1 mA
4.5
9.0
12.0
―
―
―
96
55
45
170
85
80
―
―
―
200
100
90
ON resistance RON
VIN = VIHC
VI/O = VCC or GND
II/O ≤ 1 mA
2.0
4.5
9.0
12.0
―
―
―
―
160
70
50
45
―
100
75
70
―
―
―
―
―
130
95
90
Ω
Difference of ON
resistance between
switches
ΔRON
VIN = VIHC
VI/O = VCC to GND
II/O ≤ 1 mA
4.5
9.0
12.0
―
―
―
10
5
5
―
―
―
―
―
―
―
―
―
Ω
Input/output leakage
current
(switch off)
IOFF
VOS = VCC or GND
VIS = GND or VCC
VIN = VILC
12.0 ― ― ±100 ― ±1000 nA
Switch input leakage
current
(switch on, output
open)
IIZ
VOS=VCC or GND
VIN = VIHC
12.0 ― ― ±100 ― ±1000 nA
Control input current IIN V
IN = VCC or GND 12.0 ― ― ±100 ― ±1000 nA
Quiescent supply
current ICC VIN = VCC or GND
6.0
9.0
12.0
―
―
―
―
―
―
1.0
4.0
8.0
―
―
―
10.0
40.0
80.0
μA
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)
Ta = 25°C Ta =
−40 to 85°C
Characteristics Symbol Test Condition
VCC (V) Min Typ. Max Min Max
Unit
Phase difference
between input and
output
φI-O ―
2.0
4.5
9.0
12.0
―
―
―
―
10
4
3
3
50
10
8
7
―
―
―
―
65
13
10
9
ns
Output enable time
tpZL
tpZH
RL = 1 kΩ
2.0
4.5
9.0
12.0
―
―
―
―
18
8
6
6
100
20
12
12
―
―
―
―
125
25
22
18
ns
Output disable time
tpLZ
tpHZ RL = 1 kΩ
2.0
4.5
9.0
12.0
―
―
―
―
20
10
8
8
115
23
20
18
―
―
―
―
145
29
25
22
ns
Maximum control
input frequency
RL = 1 kΩ
CL = 15 pF
VOUT = 1/2 VCC
2.0
4.5
9.0
12.0
―
―
―
―
30
30
30
30
―
―
―
―
―
―
―
―
―
―
―
―
MHz
Control input
capacitance CIN ― ― 5 10 ― 10 pF
Switch terminal
capacitance CI/O ― ― 6 ― ― ― pF
Feed through
capacitance CIOS ― ― 0.5 ― ― ― pF
Power dissipation
capacitance CPD (Note) ― 15 ― ― ― pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC / 4 (per channel)
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note)
Characteristics Symbol Test Condition VCC
(V)
Typ. Unit
Sine wave distortion
(T.H.D)
fIN = 1 kHz, VIN = 4 Vp-p, @VCC = 4.5 V
RL = 10 kΩ, VIN = 8 Vp-p, @VCC = 9.0 V
CL = 50 pF
4.5
9.0
0.05
0.04
%
Frequency response
(switch on)
fmax
Adjust fIN voltage to obtain 0dBm at VOS
Increase fIN frequency until dB meter reads −3dB
RL = 50 Ω, CL = 10 pF
fIN = 1 MHz, sine wave
4.5
9.0
200
200
MHz
Feedthrough attenuation
(switch off)
Vin is centered at VCC/2
Adjust input for 0dBm
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, sine wave
4.5
9.0
−60
−60
dB
Crosstalk
(control input to signal output)
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, square wave (tr = tf = 6 ns)
4.5
9.0
60
100
mV
Crosstalk
(between any switches)
Adjust VIN to obtain 0dBm at input
RL = 600 Ω, CL = 50 pF
fIN = 1 MHz, sine wave
4.5
9.0
−60
−60
dB
Note: These characteristics are determined by design of devices.
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Switching Characteristics Test Circuits
1. tpLZ, tpHZ, tpZL, tpZH
2. Cross Talk (control input-switch output)
fIN = 1 MHz duty = 50% tr = tf = 6 ns
3. Feedthrough Attenuation
VCC
GND
VOH
VOL
VOH
VOL
90%
tpHZ
tpLZ
10%
tpZL
tpZH
50%
50%
50%
10%
VC
VO/I
(S1 = VCC, S2 = GND)
VO/I
(S1 = GND, S2 = VCC)
6 ns 6 ns
1 kΩ S2
GND
VCC C
S1
from
P.G
O/I I/O
VCC
50 pF
VCC
GND
from
P.G
600 Ω
50 pF
600 Ω
VCC
GND
VCC C
O/I I/O
VCC/2
VCC/2
VCC
0.1 μF
600 Ω
50 pF
600 Ω
GND
VCC C
O/I I/O
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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4. CIOS, CI/O
5. Crosstalk
(between any two switches)
6. Frequency Response
(switch on)
VCC
CI/O
CI/O
CIOS
GND
VCC C
O/I I/O
VIN
VCC
600 Ω
GND
600 Ω
50 pF
0.1 μF
600 Ω
50 pF
O/I I/O
600 Ω
C
VCC C
O/I I/O
0.1 μF
50 Ω
10 pF
GND
VCC C
O/I I/O
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Package Dimensions
Weight: 0.96 g (typ.)
TC74HC4066AP/AF/AFN/AFT
2009-05-01
10
Package Dimensions
Weight: 0.18 g (typ.)
TC74HC4066AP/AF/AFN/AFT
2009-05-01
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Package Dimensions (Note)
Note: This package is not available in Japan.
Weight: 0.12 g (typ.)
TC74HC4066AP/AF/AFN/AFT
2009-05-01
12
Package Dimensions
Weight: 0.06 g (typ.)
TC74HC4066AP/AF/AFN/AFT
2009-05-01
13
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
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equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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