DATA SH EET
Product specification
Supersedes data of 1998 Jul 10 2003 Apr 11
DISCRETE SEMICONDUCTORS
BAS70-07S
Schottky barrier double diode
b
ook, halfpage
MBD128
2003 Apr 11 2
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07S
FEATURES
•Low forward voltage
•Guard ring protected
•Small SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies are encapsulated in a SOT363 (SC-88)
small SMD plastic package.
PINNING
PIN DESCRIPTION
1 anode 1
2 not connected
3 cathode 2
4 anode 2
5 not connected
6 cathode 1
handbook, halfpage
654
123
MDB277
MSA370
123
654
Top view
Fig.1 Simplified outline (SOT363; SC-88) and
symbol.
Marking code: 77.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −70 V
IFcontinuous forward current −70 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −70 mA
IFSM non-repetitive peak forward current tp<10 ms −100 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2003 Apr 11 3
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07S
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulsed test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.2
IF= 1 mA 410 mV
IF= 10 mA 750 mV
IF=15mA 1 V
I
Rreverse current VR= 50 V; note 1; see Fig.3 100 nA
VR= 70 V; note 1; see Fig.3 10 µA
τcharge carrier life time (Krakauer
method) IF= 5 mA 100 ps
Cddiode capacitance f = 1 MHz; VR= 0 V; see Fig.5 2 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
2003 Apr 11 4
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07S
GRAPHICAL DATA
Fig.2 Forward current as a function of forward
voltage; typical values.
10
0 0.2 0.4 0.6 0.8 1
1
IF
(mA)
V (V)
F
MRA803
(1) (4)(2) (3)
102
10 1
10 2
(1) Tamb = 125 °C.
(2) Tamb =85°C. (3) Tamb =25°C.
(4) Tamb =−40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MRA805
1
10
10
020406080
V (V)
R
IR
(µA) (1)
(3)
(2)
2
10 1
10 2
10 3
(1) Tamb = 150 °C.
(2) Tamb =85°C. (3) Tamb =25°C.
10
1110
r
diff
IF (mA)
MRA802
10
−1
10
2
10
2
10
3
f = 10 kHz.
Fig.4 Differential forward resistance as a function
of forward current; typical values. Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
0
0.5
1
1.5
2
0 20406080
MRA804
Cd
(pF)
V (V)
R
2003 Apr 11 5
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07S
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2003 Apr 11 6
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07S
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL W://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Apr 11 7
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07S
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/04/pp8 Date of release: 2003 Apr 11 Document order number: 9397 750 11159
Philips Semiconductors - PIP - BAS70-07S; Schottky barrier double diode
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General description
Planar Schottky barrier double diode with an integrated guard ring for stress protection.
Two separate dies are encapsulated in a SOT363 (SC-88) small SMD plastic package.
top
Features
● Low forward voltage
● Guard ring protected
● Small SMD package.
top
Applications
● Ultra high-speed switching
● Voltage clamping
● Protection circuits
● Blocking diodes.
top
Datasheet
Type
number Title Publication
release date Datasheet status Page
count File
size
(kB)
Datasheet
BAS70-07S Schottky
barrier double
diode
4/3/2011 Product
specification 8 58
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Philips Semiconductors - PIP - BAS70-07S; Schottky barrier double diode
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BAS70-
07S 9340 458 40115 Standard Marking *
Reel Pack, SMD SOT363
(UMT6) Full production -
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