TO-92MOD Plastic-Encapsulate Transistors >) % 2SC1627A TRANSISTOR(NPN) 3 2S (OE se Nh &=>5 TO-92MO0OD 1.EMITTER 2.COLLECTOR 3.BASE FEATURES Pom; 0.8W (Tamb=25C) Visricso: BO V jn storage junction temperature range Ta, Tstg: -55C to + 150C ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage VisR}CBO Ic= 100 1 A, le=0 80 Vv Collector-emitter breakdown voltage ViBR)CEO ic= 5 mA, |a=0 80 Vv Emitter-base breakdown voltage V(BR)EBO le= 100 u A, Ic=0 5 Vv Collector cut-off current IcBo Vca= 50 V, le=0 0.1 uA Emitter cut-off current leso Ves= 5 V, Ic=0 0.1 wA hre Vce= 2 V, Ic= 50 mA 70 240 DC current gain rey Vce= 2 V, c= 200 MA 40 Collector-emitter saturation voltage VcEsat tc= 200 mA, Ip= 20 mA 0.4 Vv Base-emitter voltage Vee Vce= 2 V, c= 50 mA 0.55 0.8 Vv Transition frequency fr Vce= 10 V, c= 10mMA 80 MHz Rank O Y Range 70-140 420-240 22Typical Characteristics Ic Vcr COMMON EMITTER Ta=25C COLLECTOR CURRENT Ic (mA) 0 1 2 3 4 5 6 7 8 COLLECTOR-EMITTER VOLTAGE Vcr (V) : VCEsat - Ic z COMMON EMITTER S . BE 05 Ic p= 10 as SY 03 < ug ae EP 0.1 ag 28 56 B> | awl 5 5 0.01 t 3 5 10 30 50 100 300 500 COLLECTOR CURRENT Ic (mA) Pc Ta 12 z 3 B < os B 0.8 a N i NM = gx N\ Das & \ S 0.4 5 N\ a NX 3 3 oO NI 0 NX 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta (C) DC CURRENT GAIN bpg (mA) Ic COLLECTOR CURRENT (mA) Ic COLLECTOR CURRENT 2SC1627A hpp Ic COMMON EMITTER VcE=2V 1000 Ta=100C 25 100 = 26 50 30 1 3. 5 10 30 50 100 COLLECTOR CURRENT Ic (mA) 300 500 Ic - VBE 300 COMMON EMITTER VcE=2V 100 50 0 02 O04 O68 O08 10 12 14 BASE-EMITTER VOLTAGE Vpr (V) SAFE OPERATING AREA 2000 TTT TTT Tm 100] 1e MAN PULSED) 8 EE net 500 Ic MAX t } ~ a ~ 300}(CONTL = 10msX 5 | iri * NN 100ms%7 NA 100RHE FEF DC OPERATION S 50CCE (Ta = 25C) = 30 Ley { bof it % SINGLE NONREPETITIVE tol _ PULSE Ta=25C ne CURVES MUST BE DERATED LINEARLY WITH INCREASE 3 IN TEMPERATURE. Vero MAX 0.5 1 3. CS 10 COLLECTOR-EMITTER VOLTAGE Veg (V) 30 50 100 200