GSRB751S-40 Schottky Barrier Diode Features Small surface mounting type Low reverse current and low forward voltage High reliability Schematic Diagram SOD-523 Absolute Maximum Ratings (TA=25C unless otherwise specified) Parameter Symbol Limit Unit Peak Reverse Voltage VRM 40 V DC Reverse Voltage VR 30 V Mean Rectifying Current IO 30 mA Non-Repetitive Peak Forward Surge Current@t=8.3ms IFSM 200 mA Power Dissipation PD 150 mW RJA 667 C/W Junction Temperature TJ 125 C Storage Temperature TSTG -55 to +150 C Thermal Resistance Junction to Ambient Electrical Characteristics (TA=25C unless otherwise specified) Symbol Conditions Min Typ Max Unit Forward Voltage VF IF=1mA - - 0.37 V Reverse Current IR - - 0.5 A Capacitance between Terminals CT - 2 - pF Parameter VR=30V VR=1V,f=1MHZ 1/3 GSRB751S-40 Schottky Barrier Diode Typical Characteristic Curves Forward 100 Characteristics Reverse 10 Characteristics o Ta=100 C 1 T= a 2 5 FORWARD CURRENT o C REVERSE CURRENT IR a IF T =1 00 (uA) o C (mA) 10 1 0.1 0.01 0.0 0.1 o Ta=25 C 0.01 1E-3 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 0 5 10 (V) 15 20 REVERSE VOLTAGE 25 VR 30 35 (V) Power Derating Curve Capacitance Characteristics 10 200 9 Ta=25 8 f=1MHz (mW) 6 150 PD 5 4 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 7 3 2 1 100 50 0 0 5 10 REVERSE VOLTAGE 15 VR 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2/3 100 Ta ( ) 125 GSRB751S-40 Schottky Barrier Diode Package Outline Dimensions 6\PERO A A1 b c D E E1 E2 L 'LPHQVLRQV,Q0LOOLPHWHUV 0LQ 0D[ 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7 REF SOD-523 'LPHQVLRQV,Q,QFKHV 0LQ 0D[ 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7 REF Suggested Pad Layout Order Information Device Package Marking Carrier Quantity HSF Status GSRB751S-40 SOD-523 5 Tape & Reel 8000pcs / Reel RoHS compliant www.goodarksemi.com 3/3 Doc.GSRB751S-40xSC2.1