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TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120 / TIP121 / TIP122 Rev. 1.1.0
November 2014
TIP120 / TIP121 / TIP122
NPN Epitaxial Darlington Transistor
Features
Medium Power Linear Switching Applications
Complementary to TIP125 / TIP126 / TIP127
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s is n ot re commended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP120 TIP120 TO-220 3L (Single Gauge) Bulk
TIP120TU TIP120 TO-220 3L (Single Gauge) Rail
TIP121 TIP121 TO-220 3L (Single Gauge) Bulk
TIP121TU TIP121 TO-220 3L (Single Gauge) Rail
TIP122 TIP122 TO-220 3L (Single Gauge) Bulk
TIP122TU TIP122 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP120 60 VTIP121 80
TIP122 100
VCEO Collector-Emitter Voltage TIP120 60 VTIP121 80
TIP122 100
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP Collector Current (Pulse) 8 A
IB Base Current (DC) 120 mA
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8kΩ
R2 0.12kΩ
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120 / TIP121 / TIP122 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 65
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage
TIP120 IC = 100 mA, IB = 0 60 VTIP121 80
TIP122 100
ICEO Collector Cut-Off Current TIP120 VCE = 30 V, IB = 00.5
mATIP121 VCE = 40 V, IB = 0 0.5
TIP122 VCE = 50 V, IB = 0 0.5
ICBO Collector Cut-Off Current TIP120 VCB = 60 V, IE = 0 0.2 mATIP121 VCB = 80 V, IE = 0 0.2
TIP122 VCB = 100 V, IE = 0 0.2
IEBO Emitter Cut-Off Current VEB = 5 V, I C = 0 2 mA
hFE DC Current Gain(1) VCE = 3 V, IC = 0.5 A 1000
VCE = 3 V, IC = 3 A 1000
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 3 A, IB = 12 mA 2.0 V
IC = 5 A, IB = 20 mA 4.0
VBE(on) Base-Emitter On Voltage(1) VCE = 3 V, IC = 3 A 2.5 V
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 0.1 MHz 200 pF
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120 / TIP121 / TIP122 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5 IC = 250IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
Cob
f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Cob[pF] Cib[pF], CAPACITANC E
Cib
1 10 100
0.01
0.1
1
10
TIP121
TIP122
TIP120
DC
5ms
100μs
500μs
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP120 / TIP121 / TIP122 Rev. 1.1.0 4
Physical Dimensions
Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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