BAS70T-04T-13 - DIODES Incorporated

DS30261 Rev. A-1 1 of 2 BAS70T/ -04/ -05/ -06

·Low Turn-on Voltage

·Fast Switching

·PN Junction Guard Ring for Transient and

ESD Protection

·Ultra-Small Surface Mount Package

Features

TOP VIEW

Mechanical Data

BAS70T/ -04/ -05/ -06

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, minimum.

2. Test period <3000ms.

Electrical Ratings @ TA= 25°C unless otherwise specified

BAS70T Marking: 7C BAS70T-04 Marking: 7D BAS70T-05 Marking: 7E BAS70T-06 Marking: 7F

Characteristic Symbol BAS70T Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

70 V

RMS Reverse Voltage VR(RMS) 49 V

Forward Continuous Current IF70 mA

Non-Repetitive Peak Forward Surge Current @ tp<1.0s IFSM 100 mA

Power Dissipation (Note 1) Pd150 mW

Thermal Resistance Junction to Ambient Air (Note 1) RqJA 833 °C/W

Operating Junction Temperature Range Tj-55 to +125 °C

Storage Temperature Range TSTG -65 to +150 °C

Maximum Ratings and Electrical Characteristics, Single Diode@ TA= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

Reverse Breakdown Voltage (Note 2) V(BR)R 70 — — IR= 10mA

Forward Voltage VFM —410

1000 mV tp<300µs, IF= 1.0mA

tp<300µs, IF= 15mA

Peak Reverse Current IRM ¾100 nA tp< 300µs, VR= 50V

Junction Capacitance Cj¾2.0 pF VR= 0V, f = 1.0MHz

Reverse Recovery Time trr —5.0ns

IF= IR= 10mA to IR= 1.0mA,

Irr = 0.1 x IR, RL= 100W

·Case: SOT-523, Molded Plastic

·Terminals: Solderable per MIL-STD-202,

Method 208

·Polarity: See Diagram

·Marking: See Diagram

·Weight: 0.002 grams (approx.)

·Ordering Information, see Sheet 2

NEW PRODCUT

SOT-523

Dim Min Max Typ

A0.15 0.30 0.22

B0.75 0.85 0.80

C1.45 1.75 1.60

D¾¾0.50

G0.90 1.10 1.00

H1.50 1.70 1.60

J0.00 0.10 0.05

K0.60 0.80 0.75

L0.10 0.30 0.22

M0.10 0.20 0.12

N0.45 0.65 0.50

All Dimensions in mm

UNDER DEVELOPMENT