3875081 GE SOLIO STATE. OL Def) 3575081 ooxsau4 2 Qo 1-39-11 Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-Channel Enhancement-M ode N-CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors 6 4.5A and 5.5A, 350V-400V ros(on) = 1.02 and 1.52 Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input inpedance 3 m= Majority carrier device 9208-93741 TERMINAL DIAGRAM The IRF730, IRF731, IRF732 and IRF733 are n-channel enhancement-mode silicon-gate power fieid- effect transistors designed for applications such as switch- TERMINAL DESIGNATION ing regulators, switching converters, miotor drivers, relay SOURCE drivers, and drivers for high-power bipolar switching tran- = f sistors requiring high speed and low gate-drive power. eA ey = bran These types can be operated directly from integrated O ois circuits. an The IRF-types are supplied in the JEDEC TO-220AB plastic Top view GATE package, 9208-39828 JEDEC T0-220AB Absolute Maximum Ratings IRF730 iRF7at IRF 733 Dran- 400 3S0 Oran - Voltage = 400 a50 5 3.5 Pulsed Drain Current {See 14h Linear Factor 14) taductive Current, Clamped {See 15 and 16) L = 100uH . 18 Operating . Storage Temperature Range 55 to 150 Lead 300 10.063 in, (1.6mm) case for- ou peffss7soa. oo1aszo 9 I. 3875081 GE SOLID STATE _ : O1E 18370 OD T-39-11 Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. | Unns Test Condisons BYpgs Drain: Source Breakdown Voltage inEvae 400 _ . v Ves * OV , IRF7A1 = ipe733 | 250 | - - v Ip = 250hA Vgsuny Gate Threshold Voltage ALL 290 ~ {40 v Vos = Vos.'p = 250A igss Gate-Source Leakage Forward ALL - = 500 nA Yos = 20V oss Gate-Source Leakage Reverse ALL - - |-00 nA Yes = -20V Inss - Zero Gate Voltage Drain Current ALL - 250 wa Vos_= Max. Rating. Vgg = OV = ~ 1000 uA Vos = Max. Reting 0 8, Vgs = OV, Te = 125C . \Dfon! OnStar Drain Current @ F730 | os | . | A IRF731 " Von) A Vee = 10V OS 7 'Oton) *"OSion) max. GS WRF732 | yg _ A IRF 733 * Fgsteni Static Drain-Source On-State IAF730 - OM" Resistance @ (AE 733 os; to} a Vag = 10V,Ip = 2 0A iRF732 | _ tol 4.6 a IAF 733 : is Forward Teanscanductance @) ALL 360 [ao] - [su Vos) 'oiont *Fostoni max, 1p 304 Ciss inpul Capacitance ALL - 600 | 800 pF Vgs = OV, Vog = 26V,1 = 1.0NHz Coss Output Capacitance ALL - 150 | 300 oF See Fig 10 Cisy _ Reveraa Transfer Capacitance ALL = 40 [ 80 oF tgtony _ Turn On Gelay Time AL = - | 9 ns Von * 175. tp = 3.04.2, = 1601 t Pise Time ALL ~ ~ 35 ns See Fig 17 tarott) Turn Off Oslsy Time ALL ~ - 55 ns (MOSFET switching times are essentially ce Time "ALL = = 35 ns indapendent of operating temperature.) Qg Total Gate Charge ALL - |e! a0 | ac Vag 10V, Ip = 7.04, Vog = 0 8 Max. Rating. (Gate Source Plus Gate Orain} See Fig. 18 for test circurt. (Gate charge is essentially Qcs Gate Source Charge ALL _ 7 7 nc independent of operating temperature ' O99 Gate Drain ("Miller") Charge ALL - 7.0 - oc Lp (internal Orain Inductance ~ 3.5 - oH Measured trom the Modified MOSFET ftentact screw on tab symbol! ahowing the fo cantar of dia. intemal device ALL - 4.5 - nH Measured tram the drain lead, 6mm (0.25 9 In,} from package to centet of de w ls Internat Source Inductance ALL - 75 - oH Meosured from the a source lead, 6mm us 10 25in b trom package to source $s bending pad Thermal Resistance Rinse Junctian-to Case ALL = - 167 | CW Rincs Case to Sink ALL - 10 ~ cw Mounting sustace flat, smooth, and greased. RAinjA Junction to Ambient ALL - = @o | cw Frae At Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (RF730 [ ~ Tes A Moditied MOSFET symbol (Body Diode} (RF731 . showing the integral 1AF732 saverse P-N function rectifiet. o IAF733 ~ 7445 A Ism Pulse Source Current IAF730 (Body Diode @ ire731 | ~ | 2 A G IAF732 $ wre7aa | | - | 18 A Vsp - Otade Forward Voltage @ IRF730 mean | ot HP EO Te = 28C, Ig = $.58, Vgg = OV IRF 732 taF7a3 | ~ ~ 4 us v Tg = 26C.Ig = 4 5A, Vgg = OV toe Reverse Recovery Time ALL - 600 - ns Ty = 180C, Ip = 5-54, Gpidt = 100 Alps Qan Reverse Recovarad Charge ALL - 40] - ue Ty = 180C, Ip = 9.54, dipidt = 100 Alus ton Forward Tuin on Time ALL Intrinsic turn an time ts negligibla. Tura on speeds substantially controlled by Lg +lp @ Ty = 28C 150C. Pulse Test: Pulse width < W0us, Duly Cycle < 2% @ Aepenwve Rating: Pulse width limited by mex. junction tempezature. See Transient Thermal tmoedance Curve Fig 5). - 313meee ye 3875081 G E SOLID STATE O1 DE J 3a75081 0018371 go i> T-39-11 Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 Ws TEST Vos > "ton Ip, ORAIN CURRENT (AMPERES) - fg, ORAIM CURRENT {AMPERES} 8 so 100 10 200 250 300 o 1 2 3 a 5 ? Vos, ORAIN 10 SQUACE VOLTAGE (VOLTS) Vgs. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 1S LIMITED a - a = = z z s 1 5 . s g 2 = =z 2 5 3 = 2 z z = < a S 6 Te: BC = Ty * 180C MAX Reng 107 3 Ha ac 1AF220, 0 2 6 4 10 1 2 5 0 20 $100 200500 Vos ORAtN TO SOURCE VOLTAGE IVOLTS} Vg. DRAIN TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Sate Operating Area ~ S in THEAMAL IMPEDANCE (FER UNIT) o ~ 6. na 0 SINGLE 4 THERMAL 1 OUTY FACTOR, O* r . oo? 2 PEA UNIT BASE Rung + 167 066 CW. Znucti Raye, NORMALIZED EFFECTIVE TRANSIENT 2. Vas Te "Pom Zines. 4.01 oS? $ wt 2 5 yd 2 5g? 2 5 gt? 5 wf 5s ty, SOUARE WAVE FULSE QUAATION (SECONDS) Fig. 5 Maximum Effective Transient Thermat Impedance, Junction-to-Cate Vs, Pulse Duration 314 a ae3875081 G E SOLID STATE Ol DE 3875081 0018372 2 vic ioare = D 1-39-11 ft. TRANSCONQUCTANCE (SIEMENS) Vos > Ipton) # e 2 t 10 tp, ORAIN CURAENT LAMPERES! Fig. 6 Typical Transconductance Vs, Drain Current His a e oss BVggg, DRAIN TO SOURCE BREAKDOWN VOLTAGE INORMALIZED) 40 Q 40 ao 120 '60 Ty, JUNCTION TEMPERATURE ICE Fig. 8 Breakdown Voltage Vs. Temperature 1 1600 Gies Cyn + Cod, Cas Cras * Coe Cy C, teu *Cu* cord Cay Cy 200 C, CAPACITANCE iF) a n 1 40 x Vog OAAIN TO SOURCE VOLTAGE IVOLTS) Fig. 10 ~ Typical Capacitance Vs, Orain-1o-Source Voltage Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 Ss ~ wn lpg. REVERSE ORAIN CURRENT (AMPERES) 2 Vgp, SOURCE-TO DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage + t Vos + 10V Rosion). ORAIN-TO-SOUACE ON RESISTANCE (HORMALIZEO) Ip + 204 rr) a a 120 T, JUNCTION TEMPERATURE (C) Fig. 9 Normalized On-Resistance Vs. Temperature Vos* Vos * ees AF 130, 732 Vos. GATE TO SOURCE VOLTAGE {VOLTS} & ty eda FOR TEST CIRCUIT SEE FIGURE 18 a 8 6 a Nn 40 Q, TOTAL GATE CHARGE (nC) Fig, 11 Typical Gate Chargs Vs, Gate-to-Source Voltage 315ww 3875081 G E SOLID STATE Ol ve Pf 3a7soa1 Oo1aa73 4 Jo" Standard Power MOSFETs 7-39-11 {RF730, IRF731, IRF732, IRF733 3 2 Vg 20v Rosien}. ORAIN-TOSOURCE ON RESISTANCE (OHMS) ip, ORAIN CURRENT {AMPERES} Rostond wiTH OF 20 us OURATION. INITIAL Ty = 289C. (HEATING EFFECT OF 2.0 us Q a 5 20 ri) x ss so ss 100 a5 180 Ip, DRAIN CURRENT (AMPERES) Te, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs, Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature a 5 = z z 2 = = g 5 = f ' ! o oe 40 ta Te. CASE TEMPERATURE (Ct Fig. 18 Power Vs. Temperature Derating Curve VARY, TO COTAIN AEQUIRED PEAK I, eb, Ey 058V 955 TT our vero Veg: 20vLet 1g 0 FAG ss ut Fig. 15 Clamped Inductive Test Circuit o Vos CURRENT {ISOLATED SUPPLY) ME TYPE = our uv 1 Yoo > Hiv } Olut sarteny | wa PRE = VhHe Ye telat TOscorE 10 Fig. 17 Switching Time Tast Circuit CURRENT = CURRENT = SHUNT SHUNT Fig, 18 Gate Charge Test Circuit 316_ -