UTRON UT62L25716(I)
Rev. 1.3 256K X 16 BIT LOW POWER CMOS SRAM
UTRON TECHNOLOGY INC. P80046
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919 5
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER SYMBOL MIN. MAX UNIT
Input Capacitance CIN - 6 pF
Input/Output Capacitance CI/O - 8 pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels 0V to 3.0V
Input Rise and Fall T imes 5ns
Input and Output T iming Reference Levels 1.5V
Output Load CL = 30pF, IOH/IOL = -1mA/2.1mA
AC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V , TA = -40℃ to 85℃(I))
(1) READ CYCLE
PARAMETER SYMBOL UT62L25716(I)-55 UT62L25716(I)-70 UT62L25716(I)-100 UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time tRC 55 - 70 - 100 - ns
Address Access Time tAA - 55 - 70 - 100 ns
Chip Enable Access Time tACE - 55 - 70 - 100 ns
Output Enable Access Time tOE - 30 - 35 - 50 ns
Chip Enable to Output in Low Z tCLZ* 10 - 10 - 10 - ns
Output Enable to Output in Low Z tOLZ* 5 - 5 - 5 - ns
Chip Disable to Output in High Z tCHZ* - 20 - 25 - 30 ns
Output Disable to Output in High Z tOHZ* - 20 - 25 - 30 ns
Output Hold from Address Change tOH 10 - 10 - 10 - ns
LB ,UB Access Time tBA - 55 - 70 - 100 ns
LB ,UB to High-Z Output tBHZ - 25 - 30 - 40 ns
LB ,UB to Low-Z Output tBLZ 10 - 10 - 10 - ns
(2) WRITE CYCLE
PARAMETER SYMBO
UT62L25716(I)-55 UT62L25716(I)-70 UT62L25716(I)-100
UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time tWC 55 - 70 - 100 - ns
Address Valid to End of Write tAW 50 - 60 - 80 - ns
Chip Enable to End of Write tCW 50 - 60 - 80 - ns
Address Set-up Time tAS 0 - 0 - 0 - ns
Write Pulse Width tWP 45 - 55 - 70 - ns
Write Recovery Time tWR 0 - 0 - 0 - ns
Data to Write Time Overlap tDW 25 - 30 - 40 - ns
Data Hold from End of Write Time tDH 0 - 0 - 0 - ns
Output Active from End of Write tOW* 5 - 5 - 5 - ns
Write to Output in High Z tWHZ* - 30 - 30 - 40 ns
LB ,UB Valid to End of Write tBW 45 - 60 - 80 - ns
* These parameters are guaranteed by device characterization, but not production tested.