DF2S5M4CT ESD Protection Diodes Silicon Epitaxial Planar DF2S5M4CT 1. General The DF2S5M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2S5M4CT provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2S5M4CT is housed in an ultra-compact package (1.0 mm x 0.6 mm) to meet applications that require a small footprint. 2. Applications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. Features (1) Suitable for use with a 3.3 V signal line. (VRWM 3.6 V) (2) Protects devices with its high ESD performance. (VESD = 20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.3 (typ.)) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 8 V@IPP = 2 A (typ.)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.0 mm x 0.6 mm size (Nickname: CST2)) 4. Packaging CST2 Start of commercial production (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 1 2016-12 2018-01-25 Rev.3.0 DF2S5M4CT 5. Example of Circuit Diagram 6. Quick Reference Data Characteristics Working peak reverse voltage Total capacitance Symbol Note VRWM (Note 1) Ct Test Condition Min Typ. Max Unit 3.6 V VR = 0 V, f = 1 MHz 0.35 0.5 pF Dynamic resistance RDYN (Note 2) 0.3 Electrostatic discharge voltage (IEC61000-4-2) (Contact) VESD (Note 3) 20 kV Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A. Note 3: Criterion: No damage to devices. (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 2 2018-01-25 Rev.3.0 DF2S5M4CT 6.1. ESD Clamp Waveform (Note) Fig. 6.1.1 +8 kV Fig. 6.1.2 -8 kV Fig. 6.1.3 +15 kV Fig. 6.1.4 -15 kV Fig. 6.1.5 IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 3 2018-01-25 Rev.3.0 DF2S5M4CT 6.2. TLP Characteristics (Note) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 6.3. Clamp Voltage - Peak Pulse Current (VC - IPP) (Note) Fig. 6.3.1 VC - IPP Note: Fig. 6.3.2 Based on IEC61000-4-5 8/20 s pulse. The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 4 2018-01-25 Rev.3.0 DF2S5M4CT 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2) (Contact) VESD (Note 1) 20 kV Electrostatic discharge voltage (IEC61000-4-2) (Air) 20 Peak pulse power (tp = 8/20 s) PPK Peak pulse current (tp = 8/20 s) IPP 30 W 2 A (Note 2) Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5. 8. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance VF: Forward voltage Fig. 8.1 Definitions of Electrical Characteristics Characteristics Working peak reverse voltage Total capacitance Symbol Note Test Condition Min Typ. Max Unit VRWM (Note 1) 3.6 V 0.35 0.5 pF 0.3 IBR = 1 mA 3.7 4.3 5.5 V VRWM = 3.6 V 0.1 A IPP = 1 A 6 V IPP = 2 A 8 ITLP = 16 A 14 ITLP = 30 A 18 Ct Dynamic resistance RDYN Reverse breakdown voltage VBR Reverse current IR Clamp voltage VC VR = 0 V, f = 1 MHz (Note 2) (Note 3) (Note 2) V Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A. Note 3: Based on IEC61000-4-5 8/20 s pulse. (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 5 2018-01-25 Rev.3.0 DF2S5M4CT 9. Characteristics Curves (Note) Note: Fig. 9.1 I - V Fig. 9.2 IR - VR Fig. 9.3 Ct - VR Fig. 9.4 S21 - f The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 6 2018-01-25 Rev.3.0 DF2S5M4CT 10. Internal Circuit 1: Cathode 2: Anode 11. Marking (Top view) 12. Land Pattern Dimensions (for reference only) Unit: mm (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 7 2018-01-25 Rev.3.0 DF2S5M4CT Package Dimensions Unit: mm Weight: 0.7 mg (typ.) Package Name(s) Nickname: CST2 (c)2016-2018 Toshiba Electronic Devices & Storage Corporation 8 2018-01-25 Rev.3.0 DF2S5M4CT RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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