AQV414EAZ - Panasonic - Datasheet.Live

GU-E 1 Form B (AQV414E, AQV41❍EH)

TYPES

*Indicate the peak AC and DC values.

Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the relay.

RATING

Normally closed DIP6-pin

economic type with

reinforced insulation GU-E 1 F orm B

(A QV414E, A QV41❍EH)

I/O isolation

voltage

Output rating*

Package

Part No. Packing quantity

Through hole

terminal Surface-mount terminal

Load

voltage Load

current Tube packing style Tape and reel packing style Tube Tape and reel

Pick ed from the

1/2/3-pin side Pick ed from the

4/5/6-pin side

AC/DC

dual use

1,500 V AC

(Standard) 400 V 120 mA

DIP6-pin

AQV414E AQV414EA AQV414EAX AQV414EAZ 1 tube contains:

50 pcs.

1 batch contains:

500 pcs.

1,000 pcs.

5,000 V AC

(Reinforced)

60 V 550 mA AQV412EH AQV412EHA AQV412EHAX A QV412EHAZ

350 V 130 mA AQV410EH AQV410EHA AQV410EHAX A QV410EHAZ

400 V 120 mA AQV414EH AQV414EHA AQV414EHAX A QV414EHAZ

TESTING (Reinforced type)(Standard type)

(AQV410EH, 414EH) (AQV410EH, 414EH)

VDE

(AQV412EH)

VDE

mm inch

FEATURES

1. High cost-performance type of

PhotoMOS relay 1 Form B output

2. 60V type couples high capacity

(0.55A) with low on-resistance (typ. 1Ω).

3. Low on-resistance

This has been realized thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double-

diffused and Selective Doping) method.

4. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-le vel analog signals without

distortion.

5. High sensitivity and low on-

resistance

Can control max. 0.55 A load current with

5 mA input current.

Low on-resistance of typ. 1Ω

(AQV412EH).

6. Low-level off-state leakage current

of max. 1 µA (AQV414E)

7. Reinforced insulation 5,000 V type

also available

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

TYPICAL APPLICATIONS

• Power supply

• Measuring equipment

• Security equipment

• Telephone equipment

• Sensing equipment

8.8 6.4

3.6

8.8 6.4

3.9

.346 .252

.142

.346 .252

.154

Compliance with RoHS Directive

Source electrode

N–

N+

N+N+

P+N+N+

P+

Gate electrode

Passivation membrane

Cross section of the normally-closed type of

power MOS

Intermediate

insulating

membrane

Gate

oxidation

membrane

Drain

electrode

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

Item Symbol Type of

connection AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A) Remarks

Input

LED forward current IF50 mA

LED reverse voltage VR5 V

Peak forwrd current IFP 1 A f = 100 Hz, Duty factor = 0.1%

Power dissipation Pin 75 mW

Output

Load voltage (peak AC) VL400 V 60 V 350 V 400 V

Continuous load

current IL

A 0.12 A 0.55 A 0.13 A 0.12 A A connection: Peak AC, DC

B,C connection: DC

B 0.13 A 0.65 A 0.15 A 0.13 A

C 0.15 A 0.8 A 0.17 A 0.15 A

Peak load current Ipeak 0.3 A 1.5 A 0.4 A 0.3 A A connection: 100 ms (1 shot), VL = DC

Power dissipation Pout 500 mW

Total power dissipation PT550 mW

I/O isolation voltage Viso 1,500 V A C 5,000 V A C

Temperature

limits Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low temperatures

Storage Tstg –40°C to +100°C –40°F to +212°F

PhotoMOS.book Page 140 Thursday, March 26, 2009 2:21 PM

GU-E 1 Form B (AQV414E, AQV41❍EH)

2. Electrical characteristics (Ambient temperature: 25°C 77°F)

*Operate/Reverse time

RECOMMENDED OPERATING CONDITIONS

Please obey the following conditions to ensure proper relay operation and resetting.

■ For Dimensions

■ For Schematic and Wiring Diagrams

■ For Cautions for Use

■ These products are not designed for automotive use.

If you are considering to use these products for automotive applications, please contact your local Panasonic Electric

Works technical representative.

For more information

Item Symbol Type of

connection AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A) Condition

Input

LED operate (OFF) current Typical IFoff —1.45 mA 1.9 mA IL= Max.

Maximum 3.0 mA

LED reverse (ON) current Minimum IFon —0.3 mA 0.4 mA IL = Max.

Typical 1.40 mA 1.8 mA

LED dropout voltage Typical VF—1.25 V (1.14 V at IF= 5 mA) IF = 50 mA

Maximum 1.5 V

Output On resistance

Typical Ron A26

Ω

25.2

Ω

IF = 0 mA

IL = Max.

Within 1 s on time

Maximum 50

Ω

2.5

Ω

Typical Ron B20 Ω0.55 Ω13 Ω19 ΩIF = 0 mA

IL = Max.

Within 1 s on time

Maximum 25

Ω

1.3

Ω17.5

Ω

Typical Ron C10 Ω0.3 Ω6.5 Ω10 ΩIF = 0 mA

IL = Max.

Within 1 s on time

Maximum 12.5

Ω

0.7

Ω

8.8

Ω

12.5

Ω

Off state leakage current Maximum ILeak — 1 µA 10 µAIF = 5 mA

VL = Max.

Transfer

characteristics

Operate (OFF) time* Typical Toff —0.7 ms 3 ms 1.5 ms 1.3 ms IF = 0 mA ➝ 5 mA

IL = Max.

Maximum 2.0 ms 8 ms 3.0 ms

Reverse (ON) time* Typical Ton —0.1 ms 0.3 ms IF = 5 mA ➝ 0 mA

IL = Max.

Maximum 1.0 ms 1.5 ms

I/O capacitance Typical Ciso —0.8 pF f = 1 MHz

VB = 0 V

Maximum 1.5 pF

Initial I/O isolation resistance Minimum Riso — 1,000 MΩ500 V DC

Item Symbol Recommended value Unit

Input LED current IFStandard type: 5

Reinforced type: 5 to 10 mA

Toff

Input

Output 10%

90%

Ton

PhotoMOS.book Page 141 Thursday, March 26, 2009 2:21 PM

GU-E 1 Form B (AQV414E, AQV41❍EH)

REFERENCE DATA

1-(1). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

Type of connection: A

1-(2). Load current vs. ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

Type of connection: A

2. On resistance vs. ambient temperature

characteristics

Measured portion: between terminals 4 and 6;

LED current: 0 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

Ambient temperature, °C

Load current, mA

100

140

120

0 20 40 60

100–40 –20

AQV410EH

AQV414E(H)

Load current, mA

200

300

400

500

700

Ambient temperature, °C

600

0 20 40 60

100-40 -20

100

AQV412EH

On resistance, Ω

-40 -20

0 20 40 60

8085

Ambient temperature, °C

AQV410EH

AQV414E(H)

AQV412EH

3. Operate (OFF) time vs. ambient temperature

characteristics

LED current: 5mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

4. Reverse (ON) time vs. ambient temperature

characteristics

LED current: 5 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

5. LED operate (OFF) current vs. ambient

temperature characteristics

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

Operate (OFF) time, ms

2.0

3.0

Ambient temperature, °C

-40 -20

5.0

0 20 40 60

1.0

4.0

AQV414E

AQV410EH⋅AQV414EH

AQV412EH

Reverse (ON) time, ms

0-20-40 20 40 60

80 85

Ambient temperature, °C

0.8

0.6

0.4

0.2

AQV410EH

AQV414E

AQV414EH

AQV412EH

LED operate (OFF) curremt, mA

Ambient temperature, °C

-40 -20

0 20 40 60

8085

AQV414E

AQV412EH⋅AQV410EH⋅AQV414EH

6. LED reverse (ON) current vs. ambient

temperature characteristics

Load voltage: Max. (DC);

Continuous load current: Max. (DC)

7. LED dropout voltage vs. ambient

temperature characteristics

Sample: All types;

LED current: 5 to 50 mA

8-(1). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

LED reverse (ON) current, mA

Ambient temperature, °C

-40 -20

0 20 40 60

8085

AQV414E

AQV412EH⋅AQV410EH⋅AQV414EH

Ambient temperature, °C

LED dropout voltage, V

0–40 –20 20 40 60

80 85

1.5

1.4

1.3

1.2

1.1

1.0

50mA

30mA

20mA

10mA

5mA

140

120

100

–3 –2 –1–2.5 –1.5 –0.5 0.5 31.5 2.512

–20

–40

–60

–80

–100

–120

–140

AQV410EH

AQV414E

AQV414EH

Current, mA

Voltage, V

PhotoMOS.book Page 142 Thursday, March 26, 2009 2:21 PM

GU-E 1 Form B (AQV414E, AQV41❍EH)

8-(2). Current vs. voltage characteristics of

output at MOS portion

Measured portion: between terminals 4 and 6;

Ambient temperature: 25°C 77°F

9. Off state leakage current vs. load voltage

characteristics

Sample: All types;

Measured portion: between terminals 4 and 6;

LED current: 5 mA; Ambient temperature: 25°C 77°F

10. Operate (OFF) time vs. LED forward

current characteristics

Measured portion: between terminals 4 and 6;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

0.2

0.4

0.6

-0.2

-0.4

-0.6

-1 -0.5 0.50 1

AQV412EH

Voltage, V

Current, A

Off state leakage current, A

200 6040 80 100

Load voltage, V

10–3

10–6

10–9

10–12

AQV410EH

AQV412EH

AQV414EH

AQV414E

Operate (OFF) time, ms

2.0

4.0

6.0

8.0

LED forward current, mA

10.0

10 20 30 40 50

AQV414E

AQV410EH

AQV414EH

AQV412EH

11. Re v erse (ON) time vs. LED forward current

characteristics

Measured portion: between terminals 4 and 6;

Load voltage: Max. (DC); Continuous load current:

Max. (DC); Ambient temperature: 25°C 77°F

12. Output capacitance vs. applied voltage

characteristics

Measured portion: between terminals 4 and 6;

Frequency: 1 MHz;

Ambient temperature: 25°C 77°F

Reverse (ON) time, ms

LED forward current, mA

10 20 30 40 50 60100 20 30 40 50 60

0.5

0.4

0.3

0.2

0.1

AQV414E

AQV410EH,AQV414EH

AQV412EH

Output capacitance, pF

400

300

200

100

Applied voltage, V

10 20 30 40 50 60

500

AQV412EH

AQV410EH•AQV414EH•AQV414E

PhotoMOS.book Page 143 Thursday, March 26, 2009 2:21 PM