Rugged Power MOSFETs IRFP440R, IRFP441R, IRFP442R, IRFP443R Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V 'ps(on) = 0.85 and 1.19 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRFP440R, IRFP441R, IRFP442R and IRFP443R are advanced power MOSFETs designed, tested, and guaran- teed to withstand a specified level of energy in the break- down avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRFP-types are supplied in the JEDEC TO-247 plastic. package. Absolute Maximum Ratings File Number 2089 N-CHANNEL ENHANCEMENT MODE 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE T = DRAIN ean || O TOP VIEW GATE JEDEC TO-247 Par ts IRFP440R | IRFP441R | IRFP442R | IRFP443R Units Vos Drain - Source Voltage 500 450 500 450 v Vocr Drain - Gate Voltage (Res = 20 KQ) @ 500 450 500 450 Vv Ip @ Te = 25C Continuous Orain Current 8.0 8.0 7.0 7.0 A lo @ Tc = 100C Continuous Drain Current 5.0 5.0 4.0 4.0 A lon Pulsed Drain Current @ 32 32 28 28 A Vas Gate - Source Voltage +20 Vv Po @ Tc = 28C Max. Power Dissipation 125 (See Fig. 14) Ww Linear Derating Factor 1.0 (See Fig. 14) wes Eas Single Pulse Avalanche Energy Rating @ 480 mj Te Storane Pomperature lange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s} C 6-304Rugged Power MOSFETs IRFP440R, IRFP441R, IRFP442R, IRFP443R Electrical Characteristics @ T, = 25C (Unless Otherwise Specified) Parameter Min. | Typ. | Max. | Units Teast Conditions BVpss Drain - Source Breakdown Voltage IFRIFP440R _ _ = iRFP442R | 500 V__| Vos=0V IRFP441R = inepa4gR | 450 - - Vv tp = 250uA Vasin __ Gate Threshold Voltage ALL 2.0 = 40 Vv Vos = Vos, lp = A loss Gate-Source Leakage Forward ALL -_ = 100 nA Vas = 20V lose, Gate-Source Leakage Reverse ALL = = -100 nA Vas = -20V loss Zero Gate Voltage Draln Current - = 250 pA Ve = Max. Rating, Vas = OV ALL | | 1000 | uA | Voe= Max, Rating x 0.8, Vos = OV, To = 125C loin) On-State Drain Current @ (RFP440R | go _ _ A IRFP441R . Voa > lotens X Rowton max, Vas = 10V IRFP442R | 7 _ _ A IRFP443R : Rosin Static Drain-Source On-State IFIFP440R _ 08 0.85 a Resistance @ IFIFP441R , . = = Vas = 10V, lb = 4.0A IRFP442R _ 10 11 a IRFP443R : re Forward Transconductance @ ALL 40 65 __| S00) | Vos > tore X Rosionimax, 10 = 4.0 Cus Input Capacitance ALL = 1225 = DF | Vos = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL = 200 = pF See Fig. 10 Cros. Reverse Transfer Capacitance ALL = 85 = pe toon Turn-On Delay Time ALL = 7 35 ns Voo = 200V, la = 4.0A, Zo = 4.72 t Rise Time ALL = 5 15 ns See Fig. 17 texomn Turn-Ott Delay Time ALL _ 42 90 ns (MOSFET switching times are essentially t Fall Time ALL _ 14 30 ns Independent of operating temperature.) a Total Gate Charge ALL _ 42 60 nc Vas = 10V, ln = 10A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circult. (Gate charge is Q, Gate-Source Charge. ALL _ 20 nc essentially independent of operating Pa temperature.) Qga Gate-Drain (Miller!) Charge ALL = 22 = nc . bo Internal Drain Inductance ALL - 50 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to internal device 5 source and gate pins inductances and center of die. uo Ls Internal Source Inductance ALL _ 125 _ nH Measured from the source pin, 6 mm oo us (0.25 in.) from header and source s bonding pad. prer azees Thermal Resistance RrJC _ Junction-to-Case ALL = 1.0 CNW ReCS _ Case-to-Sink ALL = 01 = CAW_| Mounting surface flat, smooth, and greased. RreJA Junction-to-Ambient ALL _ _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFP440R _ _ 80 A Modified MOSFET symbo! {Body Diode) IRFP441R . showing the integral b IRFP442R 70 A reverse P-N junction rectifier. IRFP443R _ ~ : Ison Pulse Source Current IRFP440R _ _ 32 A con (Body Diode) iIRFP441R IRFP442R orch- nese IRFP44gR | ~ | | % A Vso Diode Forward Voltage @ IREPAAOR _ _ 20 Vv To = 25C, Is = 8.0A, Ves = OV Repaee | | | 19 | Vv | Te=25C,ts=7.0A, Vos =0V ty Reverse Recovery Time ALL _ 1100 = ns Ts = 150C, le = B.0A, die/dt = 100A/ps Qra Reverse Recovered Charge ALL = 64 = uC Ts = 180C, |e = 8.0A, dle/dt = 100A/us ton Forward Tum-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ti = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = SOV, starting Ty = 25C, L = 11 mH, Ros == 502, Ipeax = 8.8A. See figures 15, 16. 6-305Rugged Power MOSFETs IRFP440R, IRFP441R, IRFP442R, IRFP443R 6-306 Pr us PULSE us PULSE TEST 1 1 Vos > ' pion) * 8OS(on) max Ty = -B50C Ip. ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) bos Ty = 2500 Ty = 1260C 0 20 40 60 80 100 0 2 4 6 a 10 Vg. DRAIN.TO-SQUACE VOLTAGE {VOLTS} Vgg. GATE TO-SOURCE VOLTAGE (VOLTS! Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. OPERATION IN THIS AREAIS LIMITED 80 us PULSE TEST IRFP440R, 1 BY Rostan} 8 a band ive = oc = 2 = = 5 z 2 we ws x oc = oo 2 D> 2 Co z 2 z = x a o Oo 2 a Tp = 250 Ty = 150C MAX Arpc = OK W SINGLE PULSE IRFP441A, ee IRFP440R, 0 2 4 6 a 10 102 5 1 20 5D 6100 200 S00 Vos. DRAIN-TO-SOURCE VOLTAGE {VOLTS} Vpg. DRAIN-TO SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. ss Ss a o n Ss 2 a SINGLE PULSE (TRANSIENT 1. bury eactor,o= IL THERMAL \2 2. PER UNIT BASE * Ringe = 1.0 0EG. CW. 3. Tym - Te = Pom Zinc) 0.02 Zyncttl/ Ringo. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 0.01 10-5 2 10-4 2 5 10-3 2 5 10-2 2 5 10) 2 5 10 2 10 ty, SQUARE WAVE PULSE DURATION (SECONOS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration.Rugged Power MOSFETs IRFP440R, IRFP441R, IRFP442R, IRFP443R us PULSE TEST ' 1 t Vos > 'Dton) * Rosion! max. n = 2 nm Ty = 180C > a Ty = 1259C Ty = 2500 Dy. TRANSCONDUCTANCE (SIEMENS) eo i Ipp. REVERSE ORAIN CURRENT (AMPERES) 0 4 8 12 16 20 0 1 2 a 4 5 Ip, DAAIN CURRENT (AMPERES) Vsp. SOURCE-TO DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical transcond'uctance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 125 25 3 3 = 2 gol a 20 5 a 3 3 z = Ss # 2. & ae 1.05 Bais ot oN 2s 83 > 3 pa BZ 095 22 10 o= 2 e z z Vag = 10V = Ip = 45a a a 2 0.85 g 05 z & ! 0.75 0 -40 0 40 80 120 160 -40 a 40 80 120 160 Ty, JUNCTION TEMPERATURE (9C} Ty, JUNCTION TEMPERATURE (9C) Fig. 8 - Breakdown voitage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 2000 Cigg = Coe + Cog, Coy SHORTED 20 Crs = Cog __Vgg = 0V Cys , t= 1 MHz Coss + Cas + Ort = Cas + Coy 1600 a Vos* 0 Vog = 250V 1200 . Vos = 400v oa Ss s C, CAPACITANCE (pF) 1p = 108 FOR TEST CIRCUIT SEE FIGURE 18 ow 400 Vgs, GATE TO-SOURCE VOLTAGE (VOLTS) Ss 0 5 WwW 6% @ 22% 0 3 a 4 50 0 20 40 80 80 Vos. ORAIN.TO-SQUACE VOLTAGE (VOLTS) Oy. TOTAL GATE CHARGE (nC) Fig. 10 - Typical capacitance vs. drain-to-source voltage. _ Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-307Rugged Power MOSFETs IRFP440R, IRFP441R, IRFP442R, IRFP443R 35 =z Rosion) MEASURED WITH CURRENT PULSE OF g 2.0 us DURATION. INITIAL Ty = 25C, (HEATING S 30 EFFECT OF 2.0 us PULSE IS MINIMAL ) 3 | Qo z = 25 5 Y a Veg = 10V 2 = 5 20 oa a A ves = 20V 3 Z 15 3S /~ e z = 10 a oa 3 3 O58 Q 5 10 5 20 25 30 38 tp. DRAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance vs. drain current. Pp, POWER DISSIPATION (WATTS) 0 20 40 60 80 100 120 140 Tc. CASE TEMPERATURE (C) Fig. 14 - Power vs. temperature derating curve. 200V AQDJUST Ry TO GBTAIN SPECIFIED Ip 4a Pmvise | GENERATOR | Source J | IMPEDANCE Fig. 17 - Switching time test circuit. 6-308 In, DRAIN CURRENT (AMPERES) 25 50 8 100 125 150 Te. CASE TEMPERATURE (C) Fig. 13 - Maximum drain current vs. case temperature. VARY tp TO OBTAIN REQUIRED PEAK IL Vest tO t frie] 92C$- 42659 Fig. 15 - Unclamped energy test circuit. 92CS- 42660 Fig. 16 - Unclamped energy waveforms. CURRENT 0O +Vps REGULATOR (ISOLATED SUPPLY) SAME TYPE 12v0 BATTERY 1. Vos Ig = |p CURRENT CURRENT SHUNT SHUNT 92GS-44103 Fig. 18 - Gate charge test circuit.