AO4435
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ = 55°C -5
IGSS ±100 nA
VGS(th) -1.7 -2.3 -3 V
ID(ON) -80 A
11 14
TJ=125°C 15 19
15 18
27 36
gFS 22 S
VSD -0.74 -1 V
IS-3.5 A
Ciss 1130 1400 pF
Coss 240 pF
Crss 155 pF
Rg1 5.8 8 Ω
Qg(10V) 18 24 nC
Qg(4.5V) 9.5
Qgs 5.5 nC
Qgd 3.3 nC
tD(on) 8.7 ns
tr8.5 ns
tD(off) 18 ns
tf7 ns
trr 25 30 ns
Qrr 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Total Gate Charge
Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
mΩ
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-10A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance VGS=0V, VDS=0V, f=1MHz
IS = -1A,VGS = 0V
VDS = -5V, ID = -10A
VGS = -5V, ID = -5A
VGS = -10V, ID = -10A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS = VGS ID = -250µA
VDS = -30V, VGS = 0V
VDS = 0V, VGS = ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID = -250µA, VGS = 0V
VGS = -10V, VDS = -5V
VGS = -20V, ID = -11A
Reverse Transfer Capacitance
IF=-10A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. E
AR
and I
AR
ratings are based on low frequency and duty cycles to keep T
j
=25C.
Rev7: Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com