Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Parameter
Symbol
Typ
Max
t ≤ 10s 32 40
Steady State 60 75
Steady State R
θJL
17 24
A
mJ
°C-55 to 150
-20
60
W
±25
-80 A
V
-10.5
-8
3.1
2.0
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
Maximum Junction-to-Ambient
A
°C/W
R
θJA
-30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Continuous Drain
Current
A
UnitsParameter
T
A
=25°C
T
A
=70°C
V
Maximum
I
D
Gate-Source Voltage
P
D
Power Dissipation
A
T
A
=25°C
Drain-Source Voltage
Pulsed Drain Current
B
Junction and Storage Temperature Range
T
A
=70°C
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
AO4435
30V P-Channel MOSFET
Product Summary
V
DS
= -30V
I
D
= -10.5A (V
GS
= -20V)
R
DS(ON)
< 14mΩ (V
GS
= -20V)
R
DS(ON)
< 18mΩ (V
GS
= -10V)
R
DS(ON)
< 36mΩ (V
GS
= -5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4435 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
a load switch or in PWM applications.
-RoHS Compliant
-AO4435 is Halogen Free
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
G
D
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4435
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ = 55°C -5
IGSS ±100 nA
VGS(th) -1.7 -2.3 -3 V
ID(ON) -80 A
11 14
TJ=125°C 15 19
15 18
27 36
gFS 22 S
VSD -0.74 -1 V
IS-3.5 A
Ciss 1130 1400 pF
Coss 240 pF
Crss 155 pF
Rg1 5.8 8 Ω
Qg(10V) 18 24 nC
Qg(4.5V) 9.5
Qgs 5.5 nC
Qgd 3.3 nC
tD(on) 8.7 ns
tr8.5 ns
tD(off) 18 ns
tf7 ns
trr 25 30 ns
Qrr 12 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Total Gate Charge
Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
mΩ
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-10A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance VGS=0V, VDS=0V, f=1MHz
IS = -1A,VGS = 0V
VDS = -5V, ID = -10A
VGS = -5V, ID = -5A
VGS = -10V, ID = -10A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS = VGS ID = -250µA
VDS = -30V, VGS = 0V
VDS = 0V, VGS = ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID = -250µA, VGS = 0V
VGS = -10V, VDS = -5V
VGS = -20V, ID = -11A
Reverse Transfer Capacitance
IF=-10A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. E
AR
and I
AR
ratings are based on low frequency and duty cycles to keep T
j
=25C.
Rev7: Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0 1 2 3 4 5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-I
D
(A)
-6V
-8V
-10V
-4.5V
0
20
40
60
80
0123456
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
25°C
125°C
V
DS
= -5V
5
10
15
20
25
30
35
40
0 5 10 15 20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
V
GS
=-10V
V
GS
=-5V
V
GS
=-20V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25°C
125°C
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
5
15
25
35
45
55
2 4 6 8 10 12 14 16 18 20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
I
D
=-11A
25°C
125°C
V
GS
= -4V
V
GS
=-10V
I
D
=-10A
V
GS
=-5V
I
D
=-5A
V
GS
=-20V
I
D
=-11A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
500
1000
1500
2000
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
100ms
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
V
DS
=-15V
I
D
=-10A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4435
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs -
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Id t
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com