HN3C51F
2014-03-01
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN3C51F
Audio Frequency General Purpose Amplifier Applications
z High voltage : VCEO = 120V
z High hFE : hFE = 200 to 700
z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Base current IB 20 mA
Collector power dissipation PC* 300 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 120V, IE = 0 0.1 μA
Emitter cut-off current IEBO V
EB = 5V, IC = 0 0.1 μA
DC current gain hFE V
CE = 6V, IC = 2mA 200 700
Collector-emitter saturation voltage VCE I
C = 10mA, IB = 1mA 0.3 V
Transition frequency fT V
CE = 6V, IC = 1mA 100 MHz
Collector output capacitance Cob V
CB = 10V, IE = 0, f = 1MHz 3.0 pF
Noise figure NF VCE = 6 V, IC = 0.1 mA
f = 1 kHz, RG = 10 kΩ 1.0 dB
Note: hFE Classification GR(G): 200~400, BL (L): 350~700 ( ) Marking Symbol.
Marking Equivalent Circuit
(Top View)
1.COLLECTOR1
2.EMITTER1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.BASE1
(C1)
(E1)
(C2)
(E2)
(B2)
(B1)
JEDEC
JEITA
TOSHIBA 2-3N1B
Weight: 0.015g (Typ.)
Unit: mm
DG
Type Name
hFE Rank
Q1
654
32
1
Q2
Start of commercial production
2000-03
HN3C51F
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(Q1,Q2 Common)
HN3C51F
2014-03-01
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AMBIENT TEMPERATURE Ta (°C)
PC *– Ta
COLLECTOR POWER DISSIPATION PC (mW)
0
0
100
300
200
500
400
150 100 125 50 7525 175
*Total Rating.
HN3C51F
2014-03-01
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RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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