www.irf.com 14/2/02
IRF3000
SMPS MOSFET HEXFET® Power MOSFET
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate to Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.3 A
IDM Pulsed Drain Current 13
PD @TA = 25°C Power Dissipation2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 8.9 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Notes through are on page 8
PD- 94423
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
VDSS RDS(on) max ID
300V 0.40W@VGS = 10V 1.6A
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
IRF3000
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 2.0 ––– ––– SV
DS = 50V, ID = 0.96A
QgTotal Gate Charge ––– 22 33 ID = 0.96A
Qgs Gate-to-Source Charge ––– 4.7 7.1 nC VDS = 240V
Qgd Gate-to-Drain ("Miller") Charge ––– 11 17 VGS = 10V,
td(on) Turn-On Delay Time ––– 8.2 ––– VDD = 150V
trRise Time ––– 7.2 ––– ID = 0.96A
td(off) Turn-Off Delay Time ––– 23 ––– RG = 2.2Ω
tfFall Time ––– 23 ––– VGS = 10V
Ciss Input Capacitance ––– 730 ––– VGS = 0V
Coss Output Capacitance ––– 100 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 20 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 39 ––– VGS = 0V, VDS = 240V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 87 ––– VGS = 0V, VDS = 0V to 240V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 47 mJ
IAR Avalanche Current––– 1.9 A
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 0.96A, VGS = 0V
trr Reverse Recovery Time ––– 86 130 ns TJ = 25°C, IF = 0.96A
Qrr Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs
Diode Characteristics
1.6
13
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– VV
GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.38 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 0.34 0.40 ΩVGS = 10V, ID = 0.96A
VGS(th) Gate Threshold Voltage 3 .0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 300V, VGS = 0V
––– ––– 250 VDS = 240V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
IRF3000
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
1.6A
0.1 110 100
VDS, Dr ain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
5.5V
20µs PU LSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
0.1 110 100
VDS, Dr ain-to-Source Voltage (V )
0.1
1
10
100
ID, Drain-to-Source Current (A)
5.5V
20µs PU LSE WID TH
Tj = 150°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
5.0 6.0 7.0 8.0
VGS, Gate-to- Source Voltage (V )
0.1
1.0
10.0
100.0
ID, Drain-to-Source Current ( A)
TJ = 25°C
TJ = 150°C
VDS = 50V
20µs PU LSE WIDTH
IRF3000
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
110 100 1000
VDS, Dr ain-to-Source Volt age (V)
1
10
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-t oDrain Volt age (V )
0.1
1.0
10.0
100.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
1 10 100 1000 10000
VDS , Drain-toS ource Voltage (V )
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
0 5 10 15 20 25 30
QG Tot al Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 240V
VD S= 150V
VDS= 60V
ID= 0.96A
FOR TEST CIRCUIT
SEE FIGURE 14
IRF3000
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
2.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
IRF3000
6www.irf.com
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
20
40
60
80
100
Starting T , Junction Temperature ( C)
E , Single Puls e Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
0.9A
1.5A
1.9A
02468101214
ID , Drai n Current (A )
0.34
0.38
0.42
0.46
0.50
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = 10V
6 8 10 12 14 16
VGS, Gate -t o -S ource V oltage (V)
0.30
0.40
0.50
0.60
0.70
0.80
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 0. 96A
IRF3000
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SO-8 Package Details
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
F7101
YWW
XXXX
PART NUMBER
LOT CODE
WW = WEEK
Y = LAST DIGIT OF THE YEAR
DATE CODE (YWW)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BA SIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MIL LI MET ER SINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOT PRINT
8X 0. 72 [.02 8]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
IRF3000
8www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 26mH
RG = 25Ω, I AS = 1.9A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O U TLIN E C O NFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TE RM I NAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONF ORMS T O EI A -481 & EIA-541.
SO-8 Tape and Reel
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/02
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 0.96A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
