ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low thermal resistance package reduces junction temperature which extends the life time of the product. ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation1 @25C (Pd) Thermal Resistance1 (JC) Voltage and Current Collector-Base Voltage Emitter-Base Voltage Collector Current1 Temperatures Storage Temperature Operating Junction Temperature1 3400 W .08C/W 65V 3.5V 80A -40 to +150C +200C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL BVebo2 BVces BVceo2 hFE2 CHARACTERISTICS TEST CONDITIONS MIN Emitter-Base Breakdown(open) Ie=50mA Collector-Emitter Breakdown(shorted) Ic=30mA 3.5 65 30 20 Collector-Emitter Breakdown (open) Ic=30mA DC Current Gain Ic=5A, Vce=5V TYP MAX UNITS 100 V V V FUNCTIONAL CHARACTERISTICS @ 25C GPB c tr VSWR Zin Zout 1 2 Common Base Power Gain Collector Efficiency Rise Time Vcc = 50V, F = 1030MHz, Pout=1000W Peak Min, PW=1S, DF=1% 10 45 10.5 50 50 Output Load Mismatch Series Input Impedance (Circuit source impedance @ test cond.) Series Output Impedance (Circuit load impedance @ test cond.) dB % 80 4:1 nS 0.89 - j2.3 0.54 - j2.64 At rated output power and pulse conditions Not measurable due to EB Returns Rev A - June 2006 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. ITC1100 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.