MJE13009
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 8
www.unisonic.com.tw QW-R203-024,E
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage VCEO 400 V
Collector-Emitter Voltage (VBE=-1.5V) VCEV 700 V
Emitter Base Voltage VEBO 9 V
Continuous IC 12
Collector Current Peak* ICM 24
A
Continuous IB 6
Base Current Peak* IBM 12
A
Continuous IE 18
Emitter Current Peak* IEM 36
A
2 W Total Power Dissipation @ Ta = 25℃
Derate above 25℃ PD 16 mW/℃
100 W Total Power Dissipation @ TC = 25℃
Derate above 25℃ PD 800 mW/℃
Junction Temperature TJ +150
℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance Junction to Ambient θJA 54 ℃/W
Thermal Resistance Junction to Case θJC 4 ℃/W
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage VCEO I
C = 10mA, IB = 0 400 V
Collector Cutoff Current
VCBO=Rated Value ICEV VBE(OFF) = 1.5Vdc
VBE(OFF) = 1.5Vdc, TC = 100℃
1
5 mA
Emitter Cutoff Current IEBO V
EB = 9Vdc, IC = 0 1 mA
*ON CHARACTERISTICS
hFE1 IC = 5A,VCE = 5V 40
DC Current Gain hFE 2 I
C = 8A,VCE = 5V 30
IC = 5A, IB = 1A 1 V
IC = 8A, IB = 1.6A 1.5 V
IC = 12A, IB = 3A 3 V
Current-Emitter Saturation Voltage VCE(SAT)
IC = 8A, IB = 1.6A, TC = 100℃ 2 V
IC = 5A, IB = 1A 1.2 V
IC = 8A, IB = 1.6A 1.6 V
Base-Emitter Saturation Voltage VBE(SAT)
IC = 8A, IB = 1.6A, TC = 100℃ 1.5 V
DYNAMIC CHARACTERISTICS
Transition frequency fT I
C = 500mA, VCE = 10V, f = 1MHz 4 MHz
Output Capacitance Cob V
CB = 10V, IE = 0, f = 0.1MHz 180 pF
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time tDLY 0.06 0.1 µs
Rise Time tR 0.45 1 µs
Storage Time tS 1.3 3 µs
Fall Time tF
VCC = 125Vdc, IC = 8A
IB1 = IB2 = 1.6A, tP = 25µs
Duty Cycle ≤1% 0.2 0.7 µs
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time tS 0.92 2.3 µs
Crossover Time tC
IC=8A, Vclamp=300V, IB1=1.6A
VBE(OFF) = 5V, TC = 100℃ 0.12 0.7 µs
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%