UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. FEATURES * VCEO 400 V and 300 V * Reverse Bias SOA with Inductive Loads @ TC = 100 * Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100 tc @ 8 A, 100 is 120 ns (Typ). * 700 V Blocking Capability * SOA and Switching Applications Information. *Pb-free plating product number:MJE13009L ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13009-TA3-T MJE13009L-TA3-T MJE13009-TF3-T MJE13009L-TF3-T MJE13009-T3P-T MJE13009L-T3P-T www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-3P Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube 1 of 8 QW-R203-024,E MJE13009 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25) PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage (VBE=-1.5V) Emitter Base Voltage Collector Current Base Current Emitter Current Continuous Peak* Continuous Peak* Continuous SYMBOL VCEO VCEV VEBO IC ICM IB IBM IE RATINGS 400 700 9 12 24 6 12 18 IEM 36 Peak* Total Power Dissipation @ Ta = 25 Derate above 25 Total Power Dissipation @ TC = 25 Derate above 25 PD PD UNIT V V V A A A 2 16 100 800 W mW/ W mW/ Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10% 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case SYMBOL JA JC RATINGS 54 4 UNIT /W /W ELECTRICAL CHARACTERISTICS (TC= 25, unless otherwise specified.) PARAMETER *OFF CHARACTERISTICS Collector- Emitter Sustaining Voltage Collector Cutoff Current VCBO=Rated Value Emitter Cutoff Current *ON CHARACTERISTICS DC Current Gain SYMBOL VCEO TEST CONDITIONS TYP MAX UNIT IEBO IC = 10mA, IB = 0 VBE(OFF) = 1.5Vdc VBE(OFF) = 1.5Vdc, TC = 100 VEB = 9Vdc, IC = 0 hFE1 IC = 5A,VCE = 5V 40 IC = 8A,VCE = 5V 30 IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 8A, IB = 1.6A, TC = 100 IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 8A, IB = 1.6A, TC = 100 1 1.5 3 2 1.2 1.6 V V V V V V 1.5 V ICEV hFE 2 Current-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) DYNAMIC CHARACTERISTICS Transition frequency fT IC = 500mA, VCE = 10V, f = 1MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz SWITCHING CHARACTERISTICS (Resistive Load, Table 1) Delay Time tDLY VCC = 125Vdc, IC = 8A Rise Time tR IB1 = IB2 = 1.6A, tP = 25s Storage Time tS Duty Cycle 1% Fall Time tF Inductive Load, Clamped (Table 1, Figure 13) Voltage Storage Time tS IC=8A, Vclamp=300V, IB1=1.6A VBE(OFF) = 5V, TC = 100 Crossover Time tC *Pulse Test: Pulse Wieth = 300s, Duty Cycle = 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 400 V 1 5 1 4 mA mA MHz pF 180 0.06 0.45 1.3 0.2 0.1 1 3 0.7 s s s s 0.92 0.12 2.3 0.7 s s 2 of 8 QW-R203-024,E MJE13009 NPN SILICON TRANSISTOR TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING +5V VCC 33 1N4933 MJE210 L TEST CIRCUITS 0.001F MR826* 33 1N4933 5V 2N2222 PW DUTY CYCLE 10% 68 tR, tF 10 ns Vclamp IC RB 1k *SELECTED FOR 1 kV 1k +5V 5.1k IB VCE 51 D.U.T. 1k 1N4933 2N2905 CIRCUIT VALUES 0.02F NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 270 47 1/2W Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 MJE200 100 -VBE(off) GAP for 200 H/20 A Lcoil = 200 H VCC = 20 V Vclamp = 300 Vdc +10V OUTPUT WAVEFORMS TEST WAVEFORMS VCC = 125 V RC = 15 D1 = 1N5820 or Equiv. RB = 25 s tF CLAMPED IC tF UNCLAMPED ICM t2 t1 ADJUSTED TO OBTAIN IC t t1 t1 tF Lcoil (ICM) VCC VCE VCEM TIME Vclamp t2 Lcoil (ICM) Vclamp t2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 Test Equipment Scope-Tektronics 475 or Equivalent -8V tR, tF < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC 3 of 8 QW-R203-024,E MJE13009 NPN SILICON TRANSISTOR TABLE 2. APPLICATIONS EXAMPLES OF SWITCHING CIRCUITS LOAD LINE DIAGRAMS TIME DIAGRAMS Collector Current CIRCUIT RINGING CHOKE INVERTER VCC TURN-ON (FORWARD BIAS) SOA tON 10 ms DUTY CYCLE 10% 24A PD = 4000 W 2 TC = 100 C VOUT N IC tOFF tON 350V 12A TURN-OFF TURN-OFF (REVERSE BIAS) SOA 1.5 V VBE(off) 9.0 V DUTY CYCLE 10% TURN-ON t LEAKAGE SPIKE VCE VCC+ N(VO) VCC + VCC 400V 1 VCC+N(VOUT) 1 700V t COLLECTOR VOLTAGE VOUT TURN-ON (FORWARD BIAS) SOA tON 10 ms DUTY CYCLE 10% 24A Collector Current VCC Collector Current PUSH-PULL INVERTER/CONVERTER TC = 100 C PD = 4000 W 2 350V 12A TURN-OFF TURN-OFF (REVERSE BIAS) SOA 1.5 V VBE(off) 9.0 V DUTY CYCLE 10% 2 VCC TURN-ON + VCC 400V 1 700V 1 COLLECTOR VOLTAGE UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R203-024,E MJE13009 TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE IC(A) 3 5 8 12 NPN SILICON TRANSISTOR TC() 25 100 25 100 25 100 25 100 tsv(ns) 770 1000 630 820 720 920 640 800 trv(ns) 100 230 72 100 55 70 20 32 tfi(ns) 150 160 26 55 27 50 17 24 tti(ns) 200 200 10 30 2 8 2 4 tc(ns) 240 320 100 180 77 120 41 54 SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10-90% VCEM tfi = Current Fall Time, 90-10% ICM tti = Current Tail, 10-2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the turn-off waveforms is shown in Figure 13 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25 and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R203-024,E MJE13009 NPN SILICON TRANSISTOR TYPICAL CHARATERISTICS Collector, IC (A) Collector Current, IC (A) Figure 3. Forward Bias Power Derating 1 Second Breakdown Derating 0.6 Thermal Derating 0.4 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC (C) Figure 4. Typical Thermal Response [ZJC(t)] Transient Thermal Resistance (Normalized), r(t) Power Derating Factor 0.8 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TC = 25; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 1 may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section. 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) ZJC(t) = r(t) JC JC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) Duty Cycle, D = t1/t2 0.1 0.05 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 Single Pulse 0.02 0.05 0.1 0.2 0.5 1 2 5 Time, t (ms) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 20 50 100 200 500 1.0k 6 of 8 QW-R203-024,E MJE13009 NPN SILICON TRANSISTOR Capacitance, C (pF) Collector Current, IC (mA) DC Current Gain, hFE Collector-Emitter Voltage, VCE (V) TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R203-024,E MJE13009 NPN SILICON TRANSISTOR RESISTIVE SWITCHING PERFORMANCE UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R203-024,E