UNISONIC TECHNOLOGIES CO., LTD
MJE13009
NPN SILICON TRANSISTOR
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R203-024,E
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
The MJE13009 is designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
FEATURES
* VCEO 400 V and 300 V
* Reverse Bias SOA with Inductive Loads @ TC = 100℃
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100℃
tc @ 8 A, 100 is 120 ns (Typ).℃
* 700 V Blocking Capability
* SOA and Switching Applications Information.
*Pb-free plating product number:MJE13009L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
MJE13009-TA3-T MJE13009L-TA3-T TO-220
B C E Tube
MJE13009-TF3-T MJE13009L-TF3-T TO-220F
B C E Tube
MJE13009-T3P-T MJE13009L-T3P-T TO-3P
B C E Tube
MJE13009
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 8
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ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Emitter Voltage VCEO 400 V
Collector-Emitter Voltage (VBE=-1.5V) VCEV 700 V
Emitter Base Voltage VEBO 9 V
Continuous IC 12
Collector Current Peak* ICM 24
A
Continuous IB 6
Base Current Peak* IBM 12
A
Continuous IE 18
Emitter Current Peak* IEM 36
A
2 W Total Power Dissipation @ Ta = 25℃
Derate above 25℃ PD 16 mW/℃
100 W Total Power Dissipation @ TC = 25℃
Derate above 25℃ PD 800 mW/℃
Junction Temperature TJ +150
℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Thermal Resistance Junction to Ambient θJA 54 ℃/W
Thermal Resistance Junction to Case θJC 4 ℃/W
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage VCEO I
C = 10mA, IB = 0 400 V
Collector Cutoff Current
VCBO=Rated Value ICEV VBE(OFF) = 1.5Vdc
VBE(OFF) = 1.5Vdc, TC = 100℃
1
5 mA
Emitter Cutoff Current IEBO V
EB = 9Vdc, IC = 0 1 mA
*ON CHARACTERISTICS
hFE1 IC = 5A,VCE = 5V 40
DC Current Gain hFE 2 I
C = 8A,VCE = 5V 30
IC = 5A, IB = 1A 1 V
IC = 8A, IB = 1.6A 1.5 V
IC = 12A, IB = 3A 3 V
Current-Emitter Saturation Voltage VCE(SAT)
IC = 8A, IB = 1.6A, TC = 100℃ 2 V
IC = 5A, IB = 1A 1.2 V
IC = 8A, IB = 1.6A 1.6 V
Base-Emitter Saturation Voltage VBE(SAT)
IC = 8A, IB = 1.6A, TC = 100℃ 1.5 V
DYNAMIC CHARACTERISTICS
Transition frequency fT I
C = 500mA, VCE = 10V, f = 1MHz 4 MHz
Output Capacitance Cob V
CB = 10V, IE = 0, f = 0.1MHz 180 pF
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time tDLY 0.06 0.1 µs
Rise Time tR 0.45 1 µs
Storage Time tS 1.3 3 µs
Fall Time tF
VCC = 125Vdc, IC = 8A
IB1 = IB2 = 1.6A, tP = 25µs
Duty Cycle ≤1% 0.2 0.7 µs
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time tS 0.92 2.3 µs
Crossover Time tC
IC=8A, Vclamp=300V, IB1=1.6A
VBE(OFF) = 5V, TC = 100℃ 0.12 0.7 µs
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
MJE13009
NPN SILICON TRANSISTOR
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TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
TEST CIRCUITS
0.02μF
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
DUTY CYCLE ≤ 10%
tR, tF≤ 10 ns
270
47
1/2W
100
2N2905
MJE200
–VBE(off)
D.U.T.
IB
RB
IC
MJE210
2N2222
1N4933
33
+5V
33
1N4933
0.001μF
1k
1k
68
+5V
1k
1N4933
5V
PW
L
VCC
MR826*
Vclamp
*SELECTED FOR 1 kV
5.1k
51
VCE
CIRCUIT VALUES
Coil Data:
Ferroxcube Core #6656 GAP for 200 µH/20 A V
CC = 20 V
Full Bobbin (~16 Turns) #16 Lcoil = 200 µH V
clamp = 300 Vdc
VCC = 125 V
RC = 15 Ω
D1 = 1N5820 or Equiv.
RB = Ω
TEST WAVEFORMS
OUTPUT WAVEFORMS
tF CLAMPED
tF UNCLAMPED t2t1 ADJUSTED TO
OBTAIN IC
Test Equipment
Scope–Tektronics
475 or Equivalent
Lcoil (ICM)
Lcoil (ICM)
VCC
Vclamp
t2≈
t1≈
IC
ICM
VCE
VCEM Vclamp
t1tF
t2
TIME
t
tR, tF < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
+10V 25 s
0
-8V
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NPN SILICON TRANSISTOR
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TABLE 2. APPLI CATIONS EXAMP L ES OF SWITCHING CIRCUITS
CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS
Collector Current
VCC VOUT
N
RINGING CHOKE
INVERTER
TC= 100 C
12A
24A
VCC
+11 700V
400V
COLLECTOR VOLTAGE
350V
2
PD= 4000 W
TURN–ON (FORWARD BIAS) SOA
tON ≤10 ms
DUTY CYCLE ≤10%
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤VBE(off) ≤9.0 V
DUTY CYCLE ≤10%
TURN–ON
TURN–OFF
VCC+N(VOUT)
t
IC
VCE
VCC
VCC
+
N(VO)
tON
tOFF
LEAKAGE SPIKE
t
VCC
VOUT
PUSH–PULL
INVERTER/CONVERTER
Collector Current
TC= 100 C
12A
24A
VCC
+11 700V
400V
COLLECTOR VOLTAGE
350V
2
PD= 4000 W
TURN–ON (FORWARD BIAS) SOA
tON ≤10 ms
DUTY CYCLE ≤10%
TURN–OFF (REVERSE BIAS) SOA
1.5 V ≤VBE(off) ≤9.0 V
DUTY CYCLE ≤10%
TURN–ON
TURN–OFF
Collector Current
2 VCC
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TABLE 3. TYPICAL INDUC TIV E SWITCHING PERFORMANCE
IC(A) TC(℃) tsv(ns) trv(ns) tfi(ns) tti(ns) tc(ns)
3 25
100
770
1000
100
230
150
160
200
200
240
320
5 25
100
630
820
72
100
26
55
10
30
100
180
8 25
100
720
920
55
70
27
50
2
8
77
120
12 25
100
640
800
20
32
17
24
2
4
41
54
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and
voltage
waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc) f
Typical inductive switching waveforms are shown in Figure 14. In general, trv + tfi ≈ t
c. However, at lower test
currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25 and has become a ℃
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are
guaranteed at 100 .℃
MJE13009
NPN SILICON TRANSISTOR
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TYPICAL CHARATERISTICS
Collector Current, IC(A)
Collector, IC(A)
160
Figure 3. Forward Bias Power Derating
0
0.6
Power Derating Factor
Case Temperature, TC(°C)
14020 40 100
0.4
80
0.8
Thermal
Derating
Second Breakdown
Derating
60 120
1
0.2
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC–VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure 1 is based on TC= 25℃; TJ(pk) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when TC≥ 25℃.
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Figure 1
may be found at any case temperature by using the appropriate
curve on Figure 3.
TJ(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Figure 2) is discussed in the applications information
section.
2
Figure 4. Typical Thermal Response [ZθJC(t)]
0.01
0.2
Transient Thermal Resistance
(Normalized), r(t)
Time, t (ms)
1
0.05
0.3
0.01 0.02 0.2
0.7
0.07
0.1
0.5
0.1
D = 0.5
0.05
0.05 50.5
1
0.03
0.02
0.1
0.2
10 20 50 100 200 500 1.0k
Single Pulse
0.02
0.01
t2
t1
Duty Cycle, D = t1/t2
P(pk)
ZθJC(t) = r(t) θJC
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC= P(pk) ZθJC(t)
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NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS (Cont.)
DC Current Gain, hFE
Collector–Emitter Voltage, VCE (V)
Collector Current, IC(mA)
Capacitance, C (pF)
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■ RESISTIVE SWITCHING PERFORMANCE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
