ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier * High Speed Switching ( trr=31ns(Typ.) @ IF=30A ) The ISL9R3060G2_F085 is StealthTMdiode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Low Forward Voltage( VF=2.4V(Max.) @ IF=30A ) * Avalanche Energy Rated * AEC-Q101 Qualified Applications * Automotive DCDC converter * Automotive On Board Charger * Switching Power Supply * Power Switching Circuits Pin Assignments 1 1. Cathode TO-247-2L 1. Cathode 2. Anode Absolute Maximum Ratings 2 2. Anode TC = 25C unless otherwise noted Ratings Units VRRM Symbol Peak Repetitive Reverse Voltage Parameter 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) EAVL Avalanche Energy (1A, 40mH) TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T C @ TC = 25C 30 A 90 A 20 mJ - 55 to +175 C Max Units 0.58 C/W 45 C/W = 25C unless otherwise noted Symbol Parameter RJC Maximum Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking Device Package Tube Quantity ISL9R3060G2 ISL9R3060G2_F085 TO-247 - 30 (c)2013 Fairchild Semiconductor Corporation ISL9R3060G2_F085 Rev. C1 1 www.fairchildsemi.com ISL9R3060G2_F085 30A, 600V Stealth Rectifier November 2013 C Symbol IR = 25C unless otherwise noted Parameter Conditions Instantaneous Reverse Current VR = 600V Min. Typ. Max Units TC = 25 C - - 100 uA TC = 175 C - - 2 mA VFM1 Instantaneous Forward Voltage IF = 30A TC = 25 C TC = 175 C - 2.0 1.5 2.4 2.2 V V trr2 Reverse Recovery Time IF =1A, di/dt = 200A/s, VCC= 390V TC = 25 C - 23 35 ns IF =30A, di/dt = 200A/s, VCC= 390V TC = 25 C TC = 175 C - 31 135 45 - ns ns IF =30A, di/dt = 200A/s, VCC= 390V TC = 25 C - 18 13 48 - ns ns nC 20 - - mJ ta tb Qrr Reverse Recovery Time EAVL Avalanche Energy Reverse Recovery Charge IAV=1.0A, L = 40mH Notes: 1. Pulse : Test Pulse width = 300s, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms ISL9R3060G2_F085 Rev. C1 2 www.fairchildsemi.com ISL9R3060G2_F085 30A, 600V Stealth Rectifier Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 1000 400 TC = 175 C 10 TC = 125oC o 1 TC = 25 C 0.1 0.1 1 2 3 4 Forward Voltage, V F [V] TC = 125oC 1 0.1 o TC = 25 C 0.01 0 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 4. Typical Reverse Recovery Time vs. di/dt 600 200 IF = 30A Reverse Recovery Time, trr [ns] Typical Capacitance at 10V = 91pF Capacitances , Cj [pF] 10 1E-3 5 Figure 3.Typical Junction Capacitance 400 200 0 0.1 1 10 Reverse Voltage, V R [V] 150 TC = 175oC TC = 125oC 100 50 o TC = 25 C 0 100 100 200 300 di/dt [A/s] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 40 20 I F = 30A Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] TC = 175o C 100 o Reverse Current , IR [A] Forward Current, IF [A] 100 T C = 175oC 15 o TC = 125 C 10 5 o TC = 25 C 0 100 200 ISL9R3060G2_F085 Rev. C1 300 di/dt [A/s] 400 30 20 10 0 25 500 3 50 75 100 125 150 o Case temperature, TC [ C] 175 www.fairchildsemi.com ISL9R3060G2_F085 30A, 600V Stealth Rectifier Typical Performance Characteristics ISL9R3060G2_F085 30A, 600V Stealth Rectifier Typical Performance Characteristics (Continued) Figure 7. Reverse Recovery Charge Reverse Recovery Charge, Q rr [nC] 1000 I F = 30A TC = 175oC 750 TC = 125oC 500 250 TC = 25oC 0 100 200 300 di/dt [A/s] 400 500 Figure 8. Transient Thermal Response Curve 1 Z (t), Thermal Response thJC D=0.5 0.1 0.2 PDM 0.1 t1 0.05 0.02 0.01 0.01 t2 * Notes : o 1. Z (t) = 0.58 C/W Typ. thJC single pulse 2. Duty Factor, D=t /t 1 2 3. T -T =P *Z (t) JM C DM thJC 0.001 -5 10 10 -4 -3 10 -2 -1 10 10 0 10 10 1 2 10 t , Square Wave Pulse Duration [sec] 1 ISL9R3060G2_F085 Rev. C1 4 www.fairchildsemi.com ISL9R3060G2_F085 30A, 600V Stealth Rectifier Mechanical Dimensions TO-247-2L Dimensions in Millimeters ISL9R3060G2_F085 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ISL9R3060G2_F085 Rev. C1 6 www.fairchildsemi.com ISL9R3060G2_F085 30A, 600V Stealth Rectifier TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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