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ISL9R3060G2_F085 Rev. C1
ISL9R3060G2_F085 30A, 600V Stealth Rectifier
November 2013
ISL9R3060G2_F085
30A, 600V Stealth Rectifier
Features
• High Speed Switching ( trr=31ns(Typ.) @ IF=30A )
• Low Forward Voltage( VF=2.4V(Max.) @ IF=30A )
• Avalanche Energy Rated
• AEC-Q101 Qualified
Applications
• Automotive DCDC converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
30A, 600V Stealth Rectifier
The ISL9R3060G2_F085 is Stealth™diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current
(IRRM) and exceptionally soft recovery under typical operating
conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching applications.
The low IRRM and short ta phase reduce loss in switching tran-
sistors. The soft recovery minimizes ringing, expanding the
range of conditions under which the diode may be operated
without the use of additional snubber circuitry. Consider using
the Stealth™ diode with an SMPS IGBT to provide the most effi-
cient and highest power density design at lower cost.
Pin Assignments
1. Cathode 2. Anode
TO-247-2L
1
1. Cathode 2. Anode
2
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics TC = 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 25°C30A
IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) 90 A
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating Junction and Storage Temperature - 55 to +175 °C
Symbol Parameter Max Units
RθJC Maximum Thermal Resistance, Junction to Case 0.58 °C/W
RθJA Maximum Thermal Resistance, Junction to Ambient 45 °C/W
Device Marking Device Package Tube Quantity
ISL9R3060G2 ISL9R3060G2_F085 TO-247 - 30
2www.fairchildsemi.com
ISL9R3060G2_F085 Rev. C1
ISL9R3060G2_F085 30A, 600V Stealth Rectifier
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
Symbol Parameter Conditions Min. Typ. Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25 °C - - 100 uA
TC = 175 °C- - 2 mA
VFM1Instantaneous Forward Voltage IF = 30A TC = 25 °C
TC = 175 °C
-
-
2.0
1.5
2.4
2.2
V
V
trr2Reverse Recovery Time IF =1A, di/dt = 200A/μs,
VCC= 390V
TC = 25 °C - 23 35 ns
IF =30A, di/dt = 200A/μs,
VCC= 390V
TC = 25 °C
TC = 175 °C
-
-
31
135
45
-
ns
ns
ta
tb
Qrr
Reverse Recovery Time
Reverse Recovery Charge
IF =30A, di/dt = 200A/μs,
VCC= 390V
TC = 25 °C-
-
-
18
13
48
-
-
-
ns
ns
nC
EAVL Avalanche Energy IAV=1.0A, L = 40mH 20 - - mJ
3www.fairchildsemi.com
ISL9R3060G2_F085 Rev. C1
ISL9R3060G2_F085 30A, 600V Stealth Rectifier
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 3.Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 5. Typical Reverse Recovery
Current vs. di/dt
Figure 6. Forward Current Derating Curve
0.112345
0.1
1
10
100
TC = 125oC
TC = 175oC
Forward Current, IF [A]
Forward Voltage, VF
[V]
TC = 25oC
400
0 100 200 300 400 50 0 600
1E-3
0.01
0.1
1
10
100
1000
TC = 175oC
TC = 25oC
TC = 125oC
Reverse Current , IR [μA]
Reverse Voltage, VR [V]
100 200 300 400 500
0
50
100
150
200
TC = 175oC
IF = 30A
TC = 25oC
TC = 125oC
Reverse Recovery Time, trr [ns]
di/dt [A/μs]
0.1 1 10 100
0
200
400
600
Capacitances , Cj [pF]
Typical Capacitance
at 10V = 91pF
Reverse Volta ge, VR [V]
25 50 75 100 1 25 150 175
0
10
20
30
40
Average Forward Current, IF(AV) [A]
Ca se temperature, TC [ oC]
100 200 300 400 500
0
5
10
15
20
TC = 125oC
IF = 30A
TC = 25oC
TC
= 175oC
Reverse Recovery Current, Irr
[A]
di/dt [A/μs]
4www.fairchildsemi.com
ISL9R3060G2_F085 Rev. C1
ISL9R3060G2_F085 30A, 600V Stealth Rectifier
Typical Performance Characteristics (Continued)
Figure 7. Reverse Recovery Charge
Figure 8. Transient Thermal Response Curve
100 200 300 400 500
0
250
500
750
1000
TC = 175oC
IF = 30A
TC = 25oC
TC
= 125oC
Reverse Recovery Charge, Qrr
[nC]
di/dt [A/μs]
10-5 10 -4 10-3 10-2 10-1 100101102
0.001
0.01
0.1
1
* Notes :
1. ZthJC(t) = 0.58 oC/W Typ.
2. Duty Factor , D=t1/t2
3. TJM - TC = PDM * ZthJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZthJ C(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
5www.fairchildsemi.com
ISL9R3060G2_F085 Rev. C1
ISL9R3060G2_F085 30A, 600V Stealth Rectifier
Mechanical Dimensions
Dimensions in Millimeters
TO-247-2L
www.fairchildsemi.com
6
ISL9R3060G2_F085 30A, 600V Stealth Rectifier
ISL9R3060G2_F085 Rev. C1
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®
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