0912GN-300.Rev2 0912GN-300 300 Watts - 65 Volts, 128 s, 10% Broad Band Data Link 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-300 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 300 Watts of pulsed RF output power at 128s pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 600 W Device Dissipation @ 25C Maximum Voltage and Current Drain-Source Voltage (VDSS) 150 V Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures -55 to +125 C Storage Temperature (TSTG) Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d Dr VSWR-T jc Characteristics Output Power Power Gain Drain Efficiency Droop Load Mismatch Tolerance Thermal Resistance Test Conditions Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq=960, 1090, 1215 MHz Pout=300W, Freq= 1215MHz Min 300 17.5 45 Typ Max 18.5 52 0.7 3:1 Pulse Width=128uS, Duty=10% 0.3 Units W dB % dB C/W Bias Condition: Vdd=+65V, Idq=50mA average current (Vgs= -2.0 ~ -4.5V ) with Gate Pulsing at Pulse Width 400us, Period at 1.28ms FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 65V VgS = -8V, VD = 0V Vgs =-8V, ID = 5mA 6 5 250 mA mA V Issue January 2013 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 0912GN-300.Rev2 0912GN-300 300 Watts -128us 10% Transistor 65 Volts, 960 MHz-1215MHz Typical RF Performance Data Frequency 0.96GHz 1.09GHz 1.215GHz Pin (W) 4.6 4.1 3.8 Pout (W) 300 300 300 Id (A) 0.98 0.89 0.86 Eff (%) 47 51.8 53.8 RL(dBc) -7 -7 -12 G (dB) 18.2 18.6 18.9 350 100% 300 90% 250 80% 200 70% 150 60% 100 50% 50 40% 0 Efficency (%) Pout(W) 0912GN300 65V 128us@10% 30% 2.5 3.2 4.0 960 Pin(W) 5.0 1215 1090 350 24 300 23 250 22 200 21 150 20 100 19 50 18 0 Gain(dB) Pout(W) 0912GN300 65V 128us@10% 17 2.5 3.2 4.0 Pin(W) 5.0 960 1090 1215 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 0912GN-300.Rev2 0912GN-300 300 Watts -128us 10% Transistor 65 Volts, 960 MHz-1215MHz Transistor Impedance Information Note: Zsource is looking into the input circuit; Z Load is looking into the output circuit. Freq (GHz) 0.96 1.09 1.215 Impedance Data Zsource 1.68 - j2.96 1.58 - j1.68 1.59 - j0.42 ZLoad 3.245 - j2.446 3.368 - j1.859 3.415 - j1.385 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 0912GN-300.Rev2 0912GN-300 250 Watts -128us 10% Transistor 65 Volts, 960 MHz-1215MHz TEST CIRCUIT DIAGRAM Board Material: Roger Duroid 6006 @ 25 Mil Thickness, Er=6.15 Item C1 C2 C3 C4 C5 C6 C7 R1 Component List Description ATC 800A ATC 100B ATC 100B ATC 100B ATC 100B Elyctrylic Capacitor (63V) ATC 800A 0805 note C3, C4 X2 Value 100pF 100PF 10000pF 1000pF 56PF 2200UF 12PF 11.5 ohm Input layout Item W(mil) L(mil) I1 36 95 I2 36 80 I3 166 36 I4 78 220 I5 201 36 I6 260 85 I7 542 300 I8 468 130 I9 258 130 I10 560 236 I11 36 1200 I12 315 195 Item D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 Output layout W(mil) L(mil) 820 250 588 80 86 100 188 80 502 112 400 258 210 36 70 220 130 36 120 102 36 204 36 741 140 80 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 0912GN-300.Rev2 0912GN-300 250 Watts -128us 10% Transistor 65 Volts, 960 MHz-1215MHz 55-KR Package Dimension Dimension A B C D E F G H I J K L M N Min (mil) 370 498 700 830 1030 101 151 385 130 003 135 105 085 065 Min (mm) 9.40 12.65 17.78 21.08 26.16 2.56 3.84 9.78 3.30 .076 3.43 2.67 2.16 1.65 Max (mil) 372 500 702 832 1032 102 152 387 132 004 137 107 86 66 Max (mm) 9.44 12.7 17.83 21.13 26.21 2.59 3.86 9.83 3.35 0.10 3.48 2.72 2.18 1.68 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.