0912GN-300.Rev2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
GENERAL DESCRIPTION
The 0912GN-300 is an internally matched, COMMON SOURCE, class
AB GaN on SiC HEMT transistor capable of providing over 18dB gain,
300 Watts of pulsed RF output power at 128μs pulse width, 10% duty
factor across the 960 to 1215 MHz band. The transistor has internal pre-
match for optimal performance. This hermetically sealed transistor can
be used for Broadband Avionics Data Link applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @ 25C 600 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Sto rage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pout=300W, Freq=960, 1090, 1215 MHz 300 W
Gp Power Gain Pout=300W, Freq=960, 1090, 1215 MHz 17.5 18.5 dB
d Drain Efficiency Pout=300W, Freq=960, 1090, 1215 MHz 45 52 %
Dr Droop Pout=300W, Freq=960, 1090, 1215 MHz 0.7 dB
VSWR-T Load Mismatch
Tolerance
Pout=300W, Freq= 1215MHz 3:1
Өjc Thermal Resistance Pulse Width=128uS, Duty=10% 0.3 °C/W
Bias Condition: Vdd=+65V , Idq=50mA average current (Vgs= -2.0 ~ -4.5V ) with Gate
Pulsing at Pulse Width 400us, Period at 1.28ms
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 65V 6 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 5 mA
BVDSS Drain-source breakdown voltage Vgs =-8V, ID = 5mA 250 V
Issue January 2013
0912GN-300
300 Watts - 65 Volts, 128 s, 10%
Broad Band Data Link 960 - 1215 MHz
0912GN-300.Rev2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
Typical RF Performance Data
Frequency Pin (W) Pout (W) Id (A) Eff (%) RL(dBc) G (dB)
0.96GHz 4.6 300 0.98 47 -7 18.2
1.09GHz 4.1 300 0.89 51.8 -7 18.6
1.215GHz 3.8 300 0.86 53.8 -12 18.9
30%
40%
50%
60%
70%
80%
90%
100%
0
50
100
150
200
250
300
350
2.5 3.2 4.0 5.0
Efficency(%)
Pout(W)
Pin(W)
0912GN‐30065V
128us@10%
960 1090 1215
17
18
19
20
21
22
23
24
0
50
100
150
200
250
300
350
2.5 3.2 4.0 5.0
Gain(dB)
Pout(W)
Pin(W)
0912GN‐30065V
128us@10%
960 1090 1215
0912GN-300
300 Watts -128us 10% Transistor
65 Volts, 960 MHz-1215MHz
0912GN-300.Rev2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
Transistor Impedance Information
Note: Zsource is looking into the input circuit;
Load
Z is looking into the output circuit.
0912GN-300
300 Watts -128us 10% Transistor
65 Volts, 960 MHz-1215MHz
Impedance Data
Freq (GHz) Zsource ZLoad
0.96 1.68 – j2.96 3.245 – j2.446
1.09 1.58 – j1.68 3.368 - j1.859
1.215 1.59 - j0.42 3.415 – j1.385
0912GN-300.Rev2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
TEST CIRCUIT DIAGRAM
Board Material: Roger Duroid 6006 @ 25 Mil Thickness, Er=6.15
Item Description Value Item W(mil) L(mil) Item W(mil) L(mil)
C1 ATC800A100pF I1 36 95 D1 820 250
C2 ATC100B 100PF I2 36 80 D2 588 80
C3 ATC100B 10000pF I3 166 36 D3 86 100
C4 ATC100B 1000pF I4 78 220 D4 188 80
C5 ATC100B56PF I5 201 36 D5 502 112
C6 ElyctrylicCapacitor(63V) 2200UF I6 260 85 D6 400 258
C7 ATC800A12PF I7 542 300 D7 210 36
R1 0805 11.5ohm I8 468 130 D8 70 220
I9 258 130 D9 130 36
noteC3,C4X2 I10 560 236 D10 120 102
I11 36 1200 D11 36 204
I12 315 195 D12 36 741
D13 140 80
ComponentList Inputlayout Outputlayout
0912GN-300
250 Watts -128us 10% Transistor
65 Volts, 960 MHz-1215MHz
0912GN-300.Rev2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
55-KR Package Dimension
Dimension Min (mil) Min (mm) Max (mil) Max (mm)
A 370 9.40 372 9.44
B 498 12.65 500 12.7
C 700 17.78 702 17.83
D 830 21.08 832 21.13
E 1030 26.16 1032 26.21
F 101 2.56 102 2.59
G 151 3.84 152 3.86
H 385 9.78 387 9.83
I 130 3.30 132 3.35
J 003 .076 004 0.10
K 135 3.43 137 3.48
L 105 2.67 107 2.72
M 085 2.16 86 2.18
N 065 1.65 66 1.68
0912GN-300
250 Watts -128us 10% Transistor
65 Volts, 960 MHz-1215MHz
