MMS004AA
SMD-00177 Rev D
Subject to Change Without Notice
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Features
• Wideband operation: DC to 50 GHz
• Low Insertion Loss (<5 dB)
• Good Input/Output Match
• High Attenuation (max. 27 dB)
• Very flat Attenuation
• Size: 1640 x 920 mm
Description
The MMS004AA is a low-power
high-attenuation DC-50 GHz PHEMT
FET attenuator. The performance
of the device is controlled by two bias
voltages, Vseries and Vshunt. The
bias voltages control the match and
attenuation of the device when varied
between -1V and +0.5V DC. Please
refer to the tables of recommended
bias settings optimized for flat insertion
loss and flat attenuation for additional
information.
Key Characteristics: Zo=50Ω
Application
The MMS004AA MMIC voltage controlled
attenuator is ideal for high frequency and
broadband applications in test equipment,
commercial and military systems. The
attenuator is especially suited for applications
needing a large amount of adjustable
attenuation and fast attenuation control
from DC to millimeter frequencies. The device
is also useful as a general purpose building
block in communications systems.
Parameter
Description
Min
Typ
Max
Attenuation (dB)
DC to 50GHz
0
-
27
Flatness (±dB)
DC to 50GHz
-
1.0
-
Insertion Loss (dB)
DC to 50GHz
-
-
5
S11 (dB)
DC to 50GHz
-
-12
-10
S22 (dB)
DC to 50GHz
-
-12
-10
P1dB (dBm)
1dB Gain Compression 0 to 15dB
5
6
-
MMS004AA
SMD-00177 Rev D
Subject to Change Without Notice
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Optimized for Flat Attenuation (Typical)
MMS004AA Attenuation
Typical on wafer measured performance
Optimized for Flat Insertion Loss (Typical)
MMS004AA Insertion Loss
Typical on wafer measured performance
Note: (*) Midband
Vseries (V)
Vshunt (V)
Att. (dB)*
-0.637
0.5
30
-0.6
0.5
28
-0.575
0.062
26
-0.555
-0.142
24
-0.539
-0.252
22
-0.527
-0.334
20
-0.509
-0.375
18
-0.478
-0.425
15.5
-0.463
-0.45
14
-0.512
-0.506
12
-0.505
-0.534
10
-0.45
-0.55
8
-0.288
-0.562
6
0.25
-0.588
4
-0.25
-0.65
2
0.5
-1
0
Vseries (V)
Vshunt (V)
Att. (dB)*
-0.688
0.5
35.5
-0.637
0.5
33.5
-0.6
0.45
31.6
-0.6
-0.15
29.8
-0.584
-0.255
27.7
-0.567
-0.315
25.7
-0.553
-0.364
23.7
-0.541
-0.408
21.7
-0.53
-0.446
19.7
-0.55
-0.5
17.6
-0.512
-0.506
15.7
-0.503
-0.539
13.7
-0.45
-0.55
11.8
-0.25
-0.562
9.6
-0.025
-0.592
7.6
0.387
-0.638
5.6
0.5
-1
3.6
MMS004AA
SMD-00177 Rev D
Subject to Change Without Notice
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MMS004AA S11 MMS004AA S22
Typical on wafer measured performance Typical on wafer measured performance
Table 1: Supplemental Specifications
Parameter
Description
Min
Typ
Max
Vseries
Attenuation Control Voltage
-2V
-
0.5V
Vshunt
Attenuation Control Voltage
-2V
-
0.5V
Dcin
DC feedback circuit input
0V
0.2V
1V
Dcout
DC feedback circuit output
0V
0.2V
1V
GND
Backside Ground Plane
-
-
-
Tch
Channel Temperature
-
-
150°C
Θch
Thermal Resistance (Tcase=85°C)
-
60˚ C/Watt
-
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SMD-00177 Rev D
Subject to Change Without Notice
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Typical Measured Performance
on Evaluation Package MMS004AA Simplified Schematic Diagram
Pick-up and Chip Handling:
This MMIC has exposed air bridges on the top surface. Do not pick up chip with vacuum
on the die center; handle from edges or use a collet.
ESD Handling and Bonding:
This MMIC is ESD sensitive; preventive measures should be taken during handling, die attach,
and bonding.
Epoxy die attach is recommended. Please review our application note MM-APP-0001
handling
and
die attach recommendations, on our website for more handling, die attach
and bonding information.
MMS004AA
SMD-00177 Rev D
Subject to Change Without Notice
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Assembly Diagram of MMS004AA
Physical Characteristics of MMS004AA
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SMD-00177 Rev D
Subject to Change Without Notice
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Information contained in this document is proprietary to Microsem. This document may not be modified in any way without the express
written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to
change the configuration and performance of the product and to discontinue product at any time.
© 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other
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