November 2009 Doc ID 15183 Rev 2 1/7
7
2STN5551
Surface mounting NPN transistor
Features
NPN transistor in SOT-223 surface mounting
package
Low VCE(sat) behavior
Application
Linear amplifier
Description
The device is an NPN transistor manufactured by
epitaxial planar technology.
Figure 1. Internal schematic diagram
12
4
3
SOT-223
C
B
E
(2) (4)
(1)
(3)SC06960_a
Table 1. Device summary
Order code Marking Package Packaging
2STN5551 2STN5551 SOT-223 Tape and reel
www.st.com
Electrical ratings 2STN5551
2/7 Doc ID 15183 Rev 2
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 180 V
VCEO Collector-emitter voltage (IB = 0) 160 V
VEBO Emitter-base voltage (IC = 0) 6 V
ICCollector current 0.6 A
PTOT Total dissipation at Tamb 25 °C 2 W
TSTG Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJA Thermal resistance junction-ambient max. 62.5 °C/W
2STN5551 Electrical characteristics
Doc ID 15183 Rev 2 3/7
2 Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 120 V
VCB = 120 V Tamb = 100 °C
50
50
nA
µA
IEBO
Emitter cut-off current
(IC = 0) VEB = 4 V 5 nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 µA 180 V
V(BR)CEO (1)
1. Pulse test: pulse duration 300 µs, duty cycle 2 %
Collector-emitter
breakdown voltage
(IB = 0)
IC = 1 mA 160 V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 µA 6 V
VCE(sat) (1) Collector-emitter
saturation voltage
IC = 10 mA IB = 1 mA
IC = 50 mA IB = 5 mA
0.15
0.2
V
V
VBE(sat) (1) Base-emitter
saturation voltage
IC = 10 mA IB = 1 mA
IC = 50 mA IB = 5 mA
1
1
V
V
hFE (1) DC current gain
IC = 1 mA VCE = 5 V
IC = 10 mA VCE = 5 V
IC = 50 mA VCE = 5 V
80
80
30
250
hfe
Small signal current
gain
VCE = 10 V IC = 1 mA
f = 1 kHz 50 200
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V
f 1 MHz 6pF
CEBO
Emitter-base
capacitance (IC = 0)
VEB = 0.5 V
f = 1 MHz 20 pF
Package mechanical data 2STN5551
4/7 Doc ID 15183 Rev 2
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2STN5551 Package mechanical data
Doc ID 15183 Rev 2 5/7
DIM.
mm.
min. typ max.
A1.80
A1 0.02 0.1
B 0.60 0.70 0.85
B1 2.903.00 3.15
c 0.24 0.26 0.35
D6.30 6.50 6.70
e2.30
e1 4.60
E3.303.50 3.70
H 6.70 7.00 7.30
V10 o
SOT-223 mechanical data
0046067_L
Revision history 2STN5551
6/7 Doc ID 15183 Rev 2
4 Revision history
Table 5. Document revision history
Date Revision Changes
20-Nov-2008 1 Initial release
19-Nov-2009 2 Document status promoted from preliminary data to datasheet
2STN5551
Doc ID 15183 Rev 2 7/7
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