MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. www.onsemi.com Features * AEC-Q101 Qualified and PPAP Capable * S Prefix for Automotive and Other Applications Requiring Unique SC-70 CASE 419 STYLE 3 Site and Control Change Requirements * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 40 Vdc Collector -Base Voltage VCBO 75 Vdc Emitter -Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current - Continuous 1 BASE 2 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board TA = 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW RqJA 280 C/W TJ, Tstg -55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. P1 MG G 1 P1 M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MMBT2222AWT1G SC-70 (Pb-Free) 3,000 / Tape & Reel SMMBT2222AWT1G SC-70 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 July, 2018 - Rev. 8 1 Publication Order Number: MMBT2222AWT1/D MMBT2222AWT1G, SMMBT2222AWT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 40 - 75 - 6.0 - - 20 - 10 35 50 75 100 40 - - - 300 - - - 0.3 1.0 0.6 - 1.2 2.0 300 - - 8.0 - 30 0.25 1.25 - 4.0 75 375 25 200 - 4.0 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) HFE DC Current Gain (Note 1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base -Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS fT Current -Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre Small -Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) NF MHz pF pF kW X 10- 4 - mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td - 10 tr - 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts - 225 tf - 60 ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. www.onsemi.com 2 MMBT2222AWT1G, SMMBT2222AWT1G SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE 2.0% +16 V 200 1.0 to 100 ms, DUTY CYCLE 2.0% +16 V 200 0 0 -2 V 1 kW < 2 ns 1k -14 V CS* < 10 pF < 20 ns CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn-On Time Figure 2. Turn-Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125C 300 200 25C 100 70 50 -55C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 50 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region www.onsemi.com 3 3.0 5.0 10 20 30 MMBT2222AWT1G, SMMBT2222AWT1G 200 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 500 10 8.0 4.0 IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 300 Figure 6. Turn -Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 100 70 50 Figure 9. Capacitances 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product www.onsemi.com 4 MMBT2222AWT1G, SMMBT2222AWT1G 1.3 150C 0.1 -55C 25C 0.001 1.0 0.9 -55C 0.8 25C 0.7 0.6 150C 0.5 0.4 0.01 0.1 0.001 1 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current 1.2 +0.5 VCE = 1 V 0 0.9 COEFFICIENT (mV/ C) 1.0 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 0.3 0.2 -2.5 0.001 0.01 0.1 1 0.1 0.2 0.5 IC, COLLECTOR CURRENT (A) 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients Figure 13. Base Emitter Voltage vs. Collector Current 10 10 ms 100 ms 1 1 ms 1s Thermal Limit IC (A) VBE(on), BASE-EMITTER VOLTAGE (V) 1.1 0.3 0.2 0.01 1.1 IC/IB = 10 1.2 IC/IB = 10 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 0.1 0.01 0.001 Single Pulse Test @ TA = 25C 0.01 0.1 1 10 VCE (Vdc) Figure 15. Safe Operating Area www.onsemi.com 5 100 500 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE N DATE 11 NOV 2008 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 c A2 GENERIC MARKING DIAGRAM L A1 XX MG G SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 MIN 0.032 0.000 1 XX M G 1.9 0.075 = Specific Device Code = Date Code = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: STATUS: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B ON SEMICONDUCTOR STANDARD NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 SC-70 (SOT-323) http://onsemi.com 1 STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98ASB42819B PAGE 2 OF 2 ISSUE REVISION DATE M ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ. BY HONG XIAO 27 MAY 2005 N CHANGED DIMENSION L VALUES TO 0.20, 0.38, 0.56 MM & 0.008, 0.015, 0.022 INCH. REQ. BY D. TRUHITTE. 11 NOV 2008 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. (c) Semiconductor Components Industries, LLC, 2008 November, 2008 - Rev. 04N Case Outline Number: 419 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative