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Page <1> V1.123/12/13
Bipolar Transistor
Description:
High power, NPN, TO-3, Silicon Transistor Designed for use in power amplier and switching circuits applications
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO
Continuous Collector Current lC20
A
Base Current IB7.5
Total Device Dissipation (TC = +25°C)
Derate Above 25°C PD
200
1.14
W
mW/°C
Operating Junction Temperature Range, TJ-65 to +200 °C
Storage Temperature Range Tstg
Features:
• High Collector Sustaining Voltage : VCEO = 80V @ IC = 200mA
• Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A
Collector
3
2
Base
1
Emitter
NPN
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Bipolar Transistor
Electrical Characteristics (TA = +25°C unless otherwise specied)
Note 1 : Pulse Test : Pulse Width % 300µs, Duty Cycle % 2%
Parameter Symbol Test Conditions Min. Max. Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0 80 - V
Collector Cut-Off Current
ICEO VCB = 80V, IB = 0
-
5
mA
ICEX VCE = 80V, VEB(off) = 1.5V 1
ICBO VCB = 80V, IE = 0
Emitter Cut-Off Current IEBO VEB = 5V, IC = 0 5
ON Characteristics ( See Note 1)
DC Current Gain hFE
VCE = 2V, IC = 1A 40 -
-
VCE = 2V, IC = 10A 15 60
VCE = 4V, IC = 20A 5 -
Collector - Emitter Saturation Voltage VCE(sat)
IC = 10A, IB = 1A
-
1
V
IC = 15A, IB = 1.5A 1.5
IC = 20A, IB = 4A 2
Base - Emitter Saturation Voltage VBE(sat)
IC = 10A, IB = 1A 1.7
IC = 15A, IB = 1.5A 2
IC = 20A, IB = 4A 2.5
Base - Emitter on Voltage VBE(on) IC = 20A, VCE = 4V 2.5
Small Signal Characteristics
Current Gain-Bandwidth Product fTVCE = 10V, IC = 1A, f = 1MHz 2 - MHz
Small-Signal Current Gain hfe VCE = 10V, IC = 1A, f = 1kHz - 40 -
Switching Characteristics
Rise Time trVCC = 30V, IC = 10A, IB1 = IB2 = 1A
-
1
us
Storage Time tsVCC = 30V, IC = 10mA, IB1 = IB2 = 1A
2
Fall Time tf1
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Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Description Part Number
Transistor, NPN, 20A, 80V, TO-3 2N5303
Part Number Table
Dimensions Min. Max.
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 0.92 1.09
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Dimensions : Millimetres
Collector
3
2
Base
1
Emitter
