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Page <1> V1.023/04/13
Bipolar Transistor
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEX 700
VCollector-Emitter Voltage VCEO(sus) 400
Emitter Base Voltage VEB 5
Collector Current -Continuous IC3.5 A
Peak Base Current IB2
Total Device Dissipation -(TC = +75°C),
Derate Above 95°C PD
100
1.33
W
W/°C
Operating Junction Temperature Range TJ-65 to +150 °C
Storage Temperature Range, Tstg -65 to +200
Thermal Resistance, Junction-to-Case RthJC 0.75 °C/W
Maximum Lead temperature
(During Soldering, 1/8" from case, 5sec) TL+275 °C
Description:
The 2N3902 is a silicon NPN transistor in a TO-3
type Package designed for use in high voltage
inverters, converters, switching regulators and
line Operated ampliers.
Electrical Characteristics: (TC = +25°C Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage VCEO(SUS) lC = 100mA, IB = 0 325 - V
Collector Cutoff Current ICEO VCE= 400V, VBE = 0 -0.25 mA
Emitter-Base Voltage IEBO IE = 100mA. lC= 5V 5
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 5V, lC = 1A 30 90
Collector-Emitter Saturation Voltage VCE(sat) lC = 2.5A, lB = 0.5A - 2.5 V
Base-Emitter Saturation Voltage VBE(sat) 2
Dynamic Characteristics
Current Gain-Bandwidth Product fTVCE = 10V, lC = 200mA, f = 1MHz 2.8 - MHz
Note:
1. Pulse Test : Pulse Width = 5ms, Duty Cycle 10%
2. Pulse Test : Pulse Width = 300µs, Duty Cycle 2%
≤
≤
NPN