2SK1670 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC - DC converter Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain 3. Source 2SK1670 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V Drain current ID 30 A 120 A 30 A 60 W Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK1670 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 250 -- -- V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 30 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 250 A VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 -- 3.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 0.075 0.095 ID = 15 A, VGS = 10 V * Forward transfer admittance |yfs| 12 20 -- S ID = 15 A, VDS = 10 V * Input capacitance Ciss -- 3100 -- pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss -- 1330 -- pF Reverse transfer capacitance Crss -- 190 -- pF Turn-on delay time td(on) -- 45 -- ns Rise time tr -- 170 -- ns Turn-off delay time td(off) -- 250 -- ns Fall time tf -- 150 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V IF = 30 A, VGS = 0 Body to drain diode reverse recovery time trr -- 90 -- ns IF = 30 A, VGS = 0, diF/dt = 100 A/s Note 1 1 ID = 15 A, VGS = 10 V, RL = 2 1. Pulse test See characteristic curves of 2SK1669. 3 2SK1670 Power vs. Temperature Derating Maximum Safe Operation Area 1,000 300 Drain Current ID (A) Channel Dissipation Pch (W) 120 80 40 100 DC 10 Op er 3 s s 0 PW 30 10 10 = 1 10 s s( at ion Ta = 25C m m 1 (T C 1 = Sh ot ) 25 C ) 0.3 Operation in this area is limited by RDS (on) 0.1 Normalized Transient Thermal Impedance S (t) 0 4 50 100 Case Temperature TC (C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25C D=1 0.5 0.3 0.1 0.2 ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C 0.1 0.05 0.03 PDM 0.02 0.01 hot 0.01 10 1S se Pul 100 T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 2SK1670 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5