2SK1670
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 90 ns)
• Suitable for motor control, switching regulator and DC – DC converter
Outline
TO-3PFM
1. Gate
2. Drain
3. Source
D
G
S
123
2SK1670
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID30 A
Drain peak current ID(pulse)*1120 A
Body to drain diode reverse drain current IDR 30 A
Channel dissipation Pch*260 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2SK1670
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±30——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µAV
DS = 200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.075 0.095 ΩID = 15 A, VGS = 10 V *1
Forward transfer admittance |yfs|1220—S I
D
= 15 A, VDS = 10 V *1
Input capacitance Ciss — 3100 — pF VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance Coss — 1330 — pF
Reverse transfer capacitance Crss — 190 — pF
Turn-on delay time td(on) —45—nsI
D
= 15 A, VGS = 10 V,
RL = 2 Ω
Rise time tr— 170 — ns
Turn-off delay time td(off) — 250 — ns
Fall time tf— 150 — ns
Body to drain diode forward
voltage VDF — 1.0 — V IF = 30 A, VGS = 0
Body to drain diode reverse
recovery time trr —90—nsI
F
= 30 A, VGS = 0,
diF/dt = 100 A/µs
Note 1. Pulse test
See characteristic curves of 2SK1669.
2SK1670
4
120
80
40
0 50 100 150
Case Temperature T
C
(°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
1,000
100
3
0.1 10 100 1,000
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
300
1
1 3 30 300
Ta = 25°C
10 µs
100 µs
DC Operation (T
C
= 25°C)
Operation in this area
is limited by R
DS (on)
1 ms
PW = 10 ms (1 Shot)
10
30
0.3
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) · θch–c
θch–c = 2.08°C/W, T
C
= 25°C
3
Pulse Width PW (s)
Normalized Transient Thermal Impedance γ
S
(t)
1.0
0.1
0.3
D = 1
10 µ
0.03
0.01 100 µ10 m 100 m 1 101 m
T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
2SK1670
5
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
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part of this document without Hitachi’s permission.
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any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
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party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.