201
Single IGBTMOD™
H-Series Module
1000 Amperes / 1200 Volts
CM1000HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C 1.840 46.75
D 1.73±0.04/0.02 44.0±1.0/0.5
E 1.46±0.04/0.02 37.0±1.0/0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offer ing simplified system assem-
bly and thermal management.
Features:
□Low Drive Power
□Low V CE(sat)
□Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□High Frequency Operation
(20-25kHz)
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□Motion/Servo Control
□UPS
□Welding Power Supplies
□Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the tab le below -i.e.
CM1000HA-24H is a 1200V
(VCES), 1000 Ampere Single
IGBTMOD™ Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 1000 24
Dimensions Inches Millimeters
L 0.79 20.0
M 0.77 19.5
N 0.75 19.0
P 0.61 15.6
Q 0.51 13.0
R 0.35 9.0
S M8 Metric M8
T 0.26 Dia. Dia. 6.5
U M4 Metric M4
D
E
EC
E
G
H
K
R
AB
B
A
NF
L
M
C
JG
P
Q
C
U - M4 THD
(2 TYP.)
S - M8 THD
(2 TYP.)
T - DIA.
(4 TYP.)
E
G
E
202
CM1000HA-24H
Single IGBTMOD™ H-Series Module
1000 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM1000HA-24H Units
Junction Temperature Tj–40 to +150 °C
Storage Temperature Tstg –40 to +125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter V oltage VGES ±20 Volts
Collector Current IC1000 Amperes
Peak Collector Current ICM 2000* Amperes
Diode Forward Current IF1000 Amperes
Diode Forward Surge Current IFM 2000* Amperes
Power Dissipation Pd5800 Watts
Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 1600 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 6 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V – 2.7 3.6** Volts
IC = 1000A, VGE = 15V, Tj = 150°C – 2.4 – Volts
Total Gate Charge QGVCC = 600V, IC = 1000A, VGS = 15V – 5000 – nC
Diode Forward Voltage VFM IE = 1000A, VGS = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 200 nF
Output Capacitance Coes VGE = 0V, VCE = 10V, f = 1MHz – – 70 nF
Re verse Transfer Capacitance Cres – – 40 nF
Resistive Turn-on Delay Time td(on) – – 600 ns
Load Rise Time trVCC = 600V, IC = 1000A, – – 1500 ns
Switching Turn-off Delay Time td(off) VGE1 = V GE2 = 15V, RG = 3.3Ω– – 1200 ns
Time F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 1000A, diE/dt = –2000A/
µ
s – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 1000A, diE/dt = –2000A/
µ
s – 7.4 –
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.022 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.050 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W
203
CM1000HA-24H
Single IGBTMOD™ H-Series Module
1000 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
VCE, (VOLTS)
IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
0246810
1600
1200
800
400
0
9
15
Tj = 25°C
VGE = 20V
8
7
10
11
12
VGE, (VOLTS)
IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
048121620
1600
1200
800
400
0
IC, (AMPERES)
VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 400 800 1200 2000
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
1600
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
Tj = 25°C
IC = 400A
IC = 2000A
IC = 1000A
1.0 1.5 2.0 2.5 3.0 3.5
101
VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
104
IE, (AMPERES)
Tj = 25°C
103
VCE, (VOLTS)
Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10-1 100102
103
102
101
100
VGE = 0V
101
Cies
Coes
Cres
IE, (AMPERES)
trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
Irr, (AMPERES)
trr
Irr
di/dt = -2000A/µsec
Tj = 25°C
103
101103104
102
101
103
102
101
102QG, (nC)
VGE, (VOLTS)
GATE CHARGE, VGE
(TYPICAL)
20
0 2000 4000 6000
16
12
8
4
08000
VCC = 600V
VCC = 400V
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
101102103
104
102
103
101
td(off)
td(on)
trVCC = 600V
VGE = ±15V
RG = 3.3 Ω
Tj = 125°C
tf
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
204
CM1000HA-24H
Single IGBTMOD™ H-Series Module
1000 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.05°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.022°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
