TEFT4300
www.vishay.com Vishay Semiconductors
Rev. 1.6, 23-Aug-11 1Document Number: 81549
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
TEFT4300 is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1 plastic package with daylight
blocking filter. Filter bandwitdth is matched with 900 nm to
950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 30°
• Package matched with IR emitter series TSUS4300 and
TSAL4400
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Optical switches
• Counters and sorters
• Interrupters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8636-2
PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.5 (nm)
TEFT4300 3.2 ± 30 875 to 1000
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEFT4300 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 5V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Tamb ≤ 55 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 3 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 450 K/W
TEFT4300
www.vishay.com Vishay Semiconductors
Rev. 1.6, 23-Aug-11 2Document Number: 81549
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature Fig. 2 - Relative Collector Current vs. Ambient Temperature
020406080
0
25
50
75
100
125
PV - Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
100
94 8308
RthJA = 450 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1200nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3pF
Collector light current Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V Ica 0.8 3.2 mA
Angle of half sensitivity ϕ± 30 deg
Wavelength of peak sensitivity λp925 nm
Range of spectral bandwidth λ0.5 875 to 1000 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA VCEsat 0.3 V
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ωton 2μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ωtoff 2.3 μs
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ωfc180 kHz
20 100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm2
= 950 nm
TEFT4300
www.vishay.com Vishay Semiconductors
Rev. 1.6, 23-Aug-11 3Document Number: 81549
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.01
0.1
1
10
I - Collector Light Current (mA)
ca
Ee- Irradiance(mW/cm )
2
10
94 8302
V
CE
=5V
= 950 nm
λ
0.1 1 10
0.1
1
10
I - Collector Light Current (mA)
ca
VCE- Collector Ermitter Voltage (V)
100
94 8305
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950 nm
λ
0.1 101
0
2
4
6
8
10
100
f = 1 MHz
CCEO - Collector Emitter Capacitance (pF)
VCE - Collector Emitter Voltage (V)
94 8294
0
0 2 4 6 8 10 12 14
2
8
6
4
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
800 900 1000 1100
94 8306
0
0.2
0.4
0.6
0.8
1.0
S(λ)rel - Relative Spectral Sensitivity
λ - Wavelength (nm)
0.4 0.2 0
94 8303
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S
rel
- Relative Radiant Sensitivity
ϕ - Angular Displacement
TEFT4300
www.vishay.com Vishay Semiconductors
Rev. 1.6, 23-Aug-11 4Document Number: 81549
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
3.9 ± 0.15
3 ± 0.1
0.4 + 0.15
- 0.05
< 0.6
3.5 ± 0.1
4.5 ± 0.3
5.8 ± 0.3
30.3 ± 0.5
1.5 ± 0.25
0.6 ± 0.15
2.54 nom.
Drawing-No.: 6.544-5269.01-4
Issue: 4; 01.12.99
specifications
according to DIN
technical drawings
EC
Area not plane
(2.5)
Chip position
3.2 ± 0.1
96 12172
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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