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PRE-RELEASE PTH 31001*
35 Watts, 1800–1900 MHz
50-Ohm Power Hybrid
15
25
35
45
19 21 23 25 27 29
Supply Voltage (Volts)
Output Power @ P-1dB (Watts
)
Output Power @ P-1dB vs. Supply Voltage
1800 MHz
1840 MHz
1880 MHz
IDQ = 450 mA
Description
The PTH 31001 is a 50 ohm power hybrid intended for applications
requiring linear power amplification in the PCS frequency range. The
part is designed to operate with 50 ohm source and load impedances
and includes bias circuitry with temperature compensation. The design
is intended to simplify system design and save space with an overall
size of less than one square inch. 100% lot traceability is standard.
Guaranteed Performance at 1900 MHz, 28 V
- Output Power = 35 Watts (P-1dB)
- Power Gain = 12 dB T yp
- Efficiency = 40%
Rugged Hybrid Design
Input Decoupling
High Single Stage Gain
Excellent Linearity
Input VSWR less than 1:5:1
Gold Metallization
Performance Characteristics
Parameter Symbol Min Typ Max Units
Frequency Range
VDD (Nom.) = 28, IDQ (Nom., Adjustable) = 475 mA f 1800 — 1900 MHz
Power Gain
VDD (Nom.) = 28, IDQ (Nom., Adjustable) = 475 mA Gp11 12 — dB
Output Power at 1 dB Compressed
VDD (Nom.) = 28, IDQ (Nom., Adjustable) = 475 mA P-1dB 35 40 — W
Input VSWR
VDD (Nom.) = 28, IDQ (Nom., Adjustable) = 475 mA y1.3:1 — 1.6:1 —
Efficiency at P-1dB
VDD (Nom.) = 28, IDQ (Nom., Adjustable) = 475 mA h35 40 — %
Package A
e
E31001
A-1234568955
* Note: Specifications for this product are preliminary and subject to change without notice. Please contact your sales representative for further product
information. Complete product infromation is available on our Website at: www.ericsson.com/rfpower.
PRE-RELEASE PTH 31001
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Maximum Ratings
Parameter Symbol Value Unit
Supply Voltage VDD 32 Vdc
Bias Current IDQ 1000 mA
Operating T emperature Tflange 90 °C
Total Device Dissipation at Tflange = 25°C PDTBD Watts
Above 25°C derate by W/°C
Storage T emperature TSTG 125 °C
Typical Performance
Bias Current vs. Drain Volt age
360
380
400
420
440
460
480
500
28 25 22 19 16
Drain Voltage (Volts)
Bias Current (mA
)
VDD = 12.87 V
Bias Current vs. Bias Volt age
0
100
200
300
400
500
600
700
11.5 12 12.5 13 13.5
Bias Voltage (V )
Bias Current (mA
)
VDD = 28 V
Efficiency vs. P ow er O ut
10
20
30
40
50
10 20 30 40 50
Output Power (Watts )
Efficiency (%
)
f = 1840 MH z
IDQ = 475 mA
VDD = 28 V
VDD = 25 V
VDD = 22 V
Efficiency vs. O utput Pow er
10
20
30
40
50
10 20 30 40 50
Output Power (W)
Efficiency (%)
f = 1800 M Hz
f = 1840 M Hz
f = 1880 M Hz
VDD = 28 V
IDQ = 465 mA
PRE-RELEASE PTH 31001
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Gain and Return Loss vs. Frequency
0
2
4
6
8
10
12
14
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
Gain (dB)
-35
-30
-25
-20
-15
-10
-5
0
Return Loss (dB)
VDD = 28 V
IDQ = 475 mA
Gain
Return Loss
8
9
10
11
12
13
14
16 19 22 25 28
Supply Voltage (Volts)
Gain (dB)
-24
-21
-18
-15
-12
-9
-6
-3
Return Loss (dB)
Gain and Ret urn Loss vs. Supply Voltage
Gai n, 1880 M Hz
Gai n, 1840 M Hz
G
a
i
n,
1800
MH
z
Ret urn Los s, 1840 M Hz
Ret urn Los s, 1800 M Hz
-70
-60
-50
-40
-30
-20
0 1020304050
Output Power (W PEP)
IM3 (dB)
Int ermodulat ion Dist ortion vs. O utput Power
VDD = 20 V
IDQ = 475 mA
f = 1800 M Hz
f = 1880 M Hz
f = 1840 M Hz
-70
-60
-50
-40
-30
-20
-10
0
16 20 24 28 32
Vdd (V)
IM3 (dB)
Int ermodulat ion Dist ortion vs. Supply Voltage
f = 1840 MH z
IDQ = 475 mA
POUT = 35 W (PEP)
POUT = 1 W(PEP)
POUT = 10 W (PEP)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
© 1998 Ericsson Inc.
LF
1301-PTH 31001 Uen Rev A 1998-08-05
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com\rfpower
