NJG1159PHH GNSS Front-End Module I GENERAL DESCRIPTION I PACKAGE OUTLINE The NJG1159PHH is a front-end module (FEM) designed for GNSS including GPS, GLONASS, BeiDou, and Galileo applications. This FEM offers low noise figure, high linearity, and high out-band rejection characteristics brought by included high performance pre-SAW filter and low noise amplifier (LNA). This FEM can operate from 1.5V to 3.3V single voltage in -40 to 105C. This FEM has stand-by mode to save current consumption. This FEM offers very small mounting area by included one SAW filter, only two external components, and very small package HFFP10-HH that is 1.5x1.1mm. I FEATURES G Available for GNSS G Low supply voltage G Low current consumption G High gain G Low noise figure G High out band rejection G Small package size G RoHS compliant and Halogen Free, MSL1 1.8/ 2.8V typ. 3.0/3.7mA typ. @VDD=1.8/ 2.8V, VCTL=1.8V 0.1A typ. @VDD=1.8/ 2.8V, VCTL=0V (Stand-by mode) 15.5/16.0dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz, 1559 to 1591MHz 1.55/1.50dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1575MHz 1.70/1.65dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1597 to 1606MHz 1.75/1.70dB typ. @VDD=1.8/ 2.8V, VCTL=1.8V, f=1559 to 1591MHz 55dBc typ. @f=704 to 915MHz, relative to 1575MHz 43dBc typ. @f=1710 to 1980MHz, relative to 1575MHz 51dBc typ. @f=2400 to 2500MHz, relative to 1575MHz HFFP10-HH: 1.5mmx1.1mm (typ.), t=0.5mm (max.) I PIN CONFIGURATION 1 pin index (Top View) GND VDD 1 I BLOCK DIAGRAM 9 VCTL VCTL LNAOUT 8 LNAIN 2 7 LNA GND Pre-Filter 3 6 PreIN 4 PreOUT GND 10 5 Pin Connection 1. VDD 2. VCTL 3. GND 4. PreIN 5. GND 6. PreOUT 7. LNAIN 8. LNAOUT 9. GND 10. GND RF IN VDD Pre-Filter RF OUT LNA GND GND I TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) VCTL Mode H Active mode L Stand-by mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2016-04-18 -1- NJG1159PHH I ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage VDD 5.0 V Control voltage VCTL 5.0 V 10 dBm 25 dBm 560 mW PIN (inband) Input power PIN (outband) VDD=2.8V, f=1575, 1597 to 1606, 1559 to 1591MHz VDD=2.8V, f=50 to 1460, 1710 to 4000MHz 4-layer FR4 PCB without through-hole (101.5x114.5mm), Tj=110C Power dissipation PD Operating temperature Topr -40 to +105 C Storage temperature Tstg -40 to +110 C I ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: Ta=+25C) PARAMETER MIN TYP MAX UNITS VDD 1.5 - 3.3 V Control Voltage (High) VCTL(H) 1.5 1.8 3.3 V Control Voltage (Low) VCTL(L) 0 0 0.3 V - 3.7 - mA - 3.0 - mA - 0.1 5.0 A - 0.1 5.0 A - 5.0 15.0 A Supply Voltage SYMBOL Supply Current 1 IDD1 Supply Current 2 IDD2 Supply Current 3 IDD3 Supply Current 4 IDD4 Control Current ICTL CONDITIONS RF OFF, VDD=2.8V, VCTL=1.8V RF OFF, VDD=1.8V, VCTL=1.8V RF OFF, VDD=2.8V, VCTL=0V RF OFF, VDD=1.8V, VCTL=0V VCTL=1.8V -2- NJG1159PHH I ELECTRICAL CHARACTERISTICS 2 (RF) General conditions: VDD=2.8V, VCTL=1.8V, fRF=1575MHz, 1597 to 1606, 1559 to 1591MHz, Ta=+25C, Zs=Zl=50, with application circuit PARAMETER Small Signal Gain (GPS)1 Small Signal Gain (GLONASS)1 Small Signal Gain (BeiDou, Galileo)1 Noise Figure (GPS)1 Noise Figure (GLONASS)1 Noise Figure (BeiDou, Galileo)1 Input Power at 1dB Gain Compression Point 1 Input 3rd Order Intercept Point 1 Out of Band Input 2nd Order Intercept Point 1 Out of Band Input 3rd Order Intercept Point 1 700MHz Harmonic1 Out-of-Band Input Power 1dB Compression 1 SYMBOL GainGPS1 GainGLN1 GainBG1 NFGPS1 NFGLN1 NFBG1 P-1dB(IN)1 IIP3_1 IIP2_OB1 IIP3_OB1 2fo1 MIN TYP MAX UNITS - 16.0 - dB - 16.5 - dB - 16.0 - dB - 1.50 - dB - 1.65 - dB - 1.70 - dB - -10.0 - dBm - -2.0 - dBm - +80 - dBm - +55 - dBm - -37 - dBm P-1dB(IN) _OB1-1 fjam=900MHz, fmeas=1575MHz at Pin=-40dBm - +24 - dBm P-1dB(IN) _OB1-2 fjam=1710MHz, fmeas=1575MHz at Pin=-40dBm - +24 - dBm - 55 - dBc - 43 - dBc - 51 - dBc Low Band Rejection 1 BR_L1 High Band Rejection 1 BR_H1 WLAN Band Rejection 1 BR_W1 RF IN Return Loss (GPS)1 RF IN Return Loss (GLONASS)1 RF IN Return Loss (BeiDou, Galileo)1 RF OUT Return Loss (GPS)1 RF OUT Return Loss (GLONASS)1 RF OUT Return Loss (BeiDou, Galileo)1 Group Delay Time Deviation (GLONASS) 1 Group Delay Time Deviation (BeiDou)1 Group Delay Time Deviation (Galileo)1 CONDITIONS f=1575MHz (GPS) Exclude PCB, Connector Losses (0.17dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.17dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.17dB) f=1575MHz (GPS)Exclude PCB, Connector Losses (0.09dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.09dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.09dB) f=1575, 1597 to 1606, 1559 to 1591MHz f1=1575,1597 to 1606,1559 to 1591MHz, f2=f1 +/-1MHz, Pin=-30dBm f1=824.6MHz at +15dBm, f2=2400MHz at +15dBm, fmeas=1575.4MHz f1=1712.7MHz at +15dBm, f2=1850MHz at +15dBm, fmeas=1575.4MHz Input jammer tone: 787.76MHz at +15dBm Measure the harmonic tone at 1575.52MHz f=704 to 915MHz, relative to 1575MHz f=1710 to 1980MHz, relative to 1575MHz f=2400 to 2500MHz, relative to 1575MHz RLiGPS1 f=1575MHz (GPS) - 10 - dB RLiGLN1 f=1597 to 1606MHz (GLONASS) - 15 - dB f=1559 to 1591MHz (BeiDou, Galileo) - 13 - dB RLoGPS1 f=1575MHz (GPS) - 15 - dB RLoGLN1 f=1597 to 1606MHz (GLONASS) - 15 - dB f=1559 to 1591MHz (BeiDou, Galileo) - 15 - dB f=1597 to 1606MHz (GLONASS) - 3 - ns GDTDB1 f=1559 to 1563.2MHz (BeiDou) - 4 - ns GDTDG1 f=1559 to 1591MHz (Galileo) - 9 - ns RLiBG1 RLoBG1 GDTDGLN1 -3- NJG1159PHH I ELECTRICAL CHARACTERISTICS 3 (RF) General conditions: VDD=1.8V, VCTL=1.8V, fRF=1575MHz, 1597 to 1606, 1559 to 1591MHz, Ta=+25C, Zs=Zl=50, with application circuit PARAMETER Small Signal Gain (GPS)2 Small Signal Gain (GLONASS)2 Small Signal Gain (BeiDou, Galileo)2 Noise Figure (GPS)2 Noise Figure (GLONASS)2 Noise Figure (BeiDou, Galileo)2 Input Power at 1dB Gain Compression Point 2 Input 3rd Order Intercept Point 2 Out of Band Input 2nd Order Intercept Point 2 Out of Band Input 3rd Order Intercept Point 2 700MHz Harmonic2 Out-of-Band Input Power 1dB Compression 2 SYMBOL GainGPS2 GainGLN2 GainBG2 NFGPS2 NFGLN2 NFBG2 P-1dB(IN)2 IIP3_2 IIP2_OB2 IIP3_OB2 2fo2 P-1dB(IN) _OB2-1 P-1dB(IN) _OB2-2 Low Band Rejection 2 BR_L2 High Band Rejection 2 BR_H2 WLAN Band Rejection 2 BR_W2 RF IN Return Loss (GPS)2 RF IN Return Loss (GLONASS)2 RF IN Return Loss (BeiDou, Galileo)2 RF OUT Return Loss (GPS)2 RF OUT Return Loss (GLONASS)2 RF OUT Return Loss (BeiDou, Galileo)2 Group Delay Time Deviation (GLONASS) 2 Group Delay Time Deviation (BeiDou)2 Group Delay Time Deviation (Galileo)2 CONDITIONS f=1575MHz (GPS) Exclude PCB, Connector Losses (0.17dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.17dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.17dB) f=1575MHz (GPS)Exclude PCB, Connector Losses (0.09dB) f=1597 to 1606MHz (GLONASS) Exclude PCB, Connector Losses (0.09dB) f=1559 to 1591MHz (BeiDou, Galileo) Exclude PCB, Connector Losses (0.09dB) f=1575, 1597 to 1606, 1559 to 1591MHz f1=1575, 1597 to 1606, 1559 to 1591MHz, f2=f1 +/-1MHz, Pin=-30dBm f1=824.6MHz at +15dBm, f2=2400MHz at +15dBm, fmeas=1575.4MHz f1=1712.7MHz at +15dBm, f2=1850MHz at +15dBm, fmeas=1575.4MHz Input jammer tone: 787.76MHz at +15dBm Measure the harmonic tone at 1575.52MHz fjam=900MHz, fmeas=1575MHz at Pin=-40dBm fjam=1710MHz, fmeas=1575MHz at Pin=-40dBm f=704 to 915MHz, relative to 1575MHz f=1710 to 1980MHz, relative to 1575MHz f=2400 to 2500MHz, relative to 1575MHz MIN TYP MAX UNITS - 15.5 - dB - 16.0 - dB - 15.5 - dB - 1.55 - dB - 1.70 - dB - 1.75 - dB - -13.0 - dBm - -5.0 - dBm - +80 - dBm - +55 - dBm - -37 - dBm - +24 - dBm - +24 - dBm - 55 - dBc - 43 - dBc - 51 - dBc RLiGPS2 f=1575MHz (GPS) - 10 - dB RLiGLN2 f=1597 to 1606MHz (GLONASS) - 15 - dB f=1559 to 1591MHz (BeiDou, Galileo) - 13 - dB RLoGPS2 f=1575MHz (GPS) - 15 - dB RLoGLN2 f=1597 to 1606MHz (GLONASS) - 15 - dB f=1559 to 1591MHz (BeiDou, Galileo) - 15 - dB f=1597 to 1606MHz (GLONASS) - 3 - ns GDTDB2 f=1559 to 1563.2MHz (BeiDou) - 4 - ns GDTDG2 f=1559 to 1591MHz (Galileo) - 9 - ns RLiBG2 RLoBG2 GDTDGLN2 -4- NJG1159PHH I TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 VDD Supply voltage terminal. Please connect bypass capacitor C1 with ground as close as possible. 2 VCTL Control voltage terminal. 3 GND 4 PreIN 5 GND 6 PreOUT 7 LNAIN RF input terminal. This terminal requires only a matching inductor L1, and does not require DC blocking capacitor because of integrated capacitor. 8 LNAOUT RF output terminal. This terminal requires no DC blocking capacitor since this terminal has integrated DC blocking capacitor. 9 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 10 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF input terminal. This terminal connects to input of pre-SAW filter. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Pre-SAW filter output terminal. This terminal connects to LNAIN with L1. -5- NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit S11, S22 S21, S12 VSWR Zin, Zout -6- NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit S21 vs. frequency NF, Gain vs. frequency (VDD=2.8V, VCTL=1.8V) 4 20 Gain 10 15 10 2 NF 1 0 S21 (dB) 3 Gain (dB) Noise Figure (dB) (VDD=2.8V, VCTL=1.8V) 20 5 -10 -20 -30 -40 -50 (NF, Gain: Exclude PCB, Connector Losses) 0 1.54 1.56 1.58 1.60 0 1.64 1.62 -60 0.0 0.5 frequency (GHz) 1.0 1.5 2.0 2.5 3.0 frequency (GHz) Group Delay vs. frequency (VDD=2.8V, VCTL=1.8V) 30 Group Delay (ns) 25 20 15 10 5 0 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 frequency (GHz) Pout, I vs. Pin Pout, IM3 vs. Pin DD (VDD=2.8V, VCTL=1.8V, fRF=1575MHz) 10 (VDD=2.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz) 20 8 OIP3=+14.9dBm 7 P-1dB(OUT)=+4.7dBm Pout (dBm) 6 IDD -5 5 Pout 4 -15 3 -20 2 Pout , IM3 (dBm) Pout 0 -10 0 IDD (mA) 5 -20 -40 -60 IM3 -80 P-1dB(IN)=-10.8dBm -25 -40 IIP3=-1.6dBm 1 -30 -20 -10 Pin (dBm) 0 10 -100 -40 -30 -20 -10 0 10 Pin (dBm) -7- NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit Out-of-band P-1dB (fjam=900MHz) Out-of-band P-1dB (fjam=1710MHz) (VDD=2.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20 (VDD=2.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20 7 16 7 14 6 14 6 12 5 12 5 Gain (dB) IDD 10 4 8 6 P-1dB(IN)_OB>+26.0dBm 8 2 6 (Gain: Exclude PCB, Connector Losses) 4 -40 -20 -10 0 3 10 20 4 -40 30 1 -30 -10 0 10 20 Out-of-band IIP2 Out-of-band IIP3 (VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz, f2=2400MHz) (VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=1712.7MHz, f2=1850MHz) 100 80 80 60 60 Pout , IM3 (dBm) Pout , IM2 (dBm) -20 40 Pout 0 -20 -40 IM2 -60 30 Pin at 1710MHz (dBm) 100 20 2 P-1dB(IN)_OB=+25.3dBm Pin at 900MHz (dBm) 120 4 (Gain: Exclude PCB, Connector Losses) 1 -30 IDD 10 3 8 Gain IDD (mA) 16 Gain (dB) 18 Gain IDD (mA) 8 18 40 20 0 Pout -20 -40 IM3 -60 -80 -80 IIP2_OB=+86.1dBm -100 -40 -20 0 20 40 60 80 IIP3_OB=+54.5dBm 100 Pin (dBm) -100 -40 -20 0 20 40 60 80 Pin (dBm) 2nd Harmonics (VDD=2.8V, VCTL=1.8V, fin=787.76MHz, fmeas=1575.52MHz) 0 2nd Harmonics (dBm) -10 -20 -30 2fo=-35.9dBm -40 -50 -60 -70 -80 -90 -100 -20 -10 0 10 20 30 Pin (dBm) -8- NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit S11, S22 S21, S12 VSWR Zin, Zout -9- NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit S21 vs. frequency NF, Gain vs. frequency (VDD=1.8V, VCTL=1.8V) 4 20 Gain 10 15 2 10 NF 1 0 S21 (dB) 3 Gain (dB) Noise Figure (dB) (VDD=1.8V, VCTL=1.8V) 20 5 -10 -20 -30 -40 -50 (NF, Gain: Exclude PCB, Connector Losses) 0 1.54 1.56 1.58 1.60 0 1.64 1.62 -60 0.0 0.5 frequency (GHz) 1.0 1.5 2.0 2.5 3.0 frequency (GHz) Group Delay vs. frequency (VDD=1.8V, VCTL=1.8V) 30 Group Delay (ns) 25 20 15 10 5 0 1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62 frequency (GHz) Pout, I vs. Pin Pout, IM3 vs. Pin DD (VDD=1.8V, VCTL=1.8V, fRF=1575MHz) 10 20 8 5 (VDD=1.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz) OIP3=+11.5dBm 7 0 P-1dB(OUT)=+1.2dBm -5 -10 5 Pout 4 IDD -15 3 -20 2 IDD (mA) Pout (dBm) 6 Pout , IM3 (dBm) Pout 0 -20 -40 -60 IM3 -80 IIP3=-4.3dBm P-1dB(IN)=-13.6dBm -25 -40 1 -30 -20 -10 Pin (dBm) 0 10 -100 -40 -30 -20 -10 0 10 Pin (dBm) - 10 - NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=1.8V, VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit Out-of-band P-1dB (fjam=900MHz) Out-of-band P-1dB (fjam=1710MHz) (VDD=1.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20 (VDD=1.8V, VCTL=1.8V, fmeas=1575MHz at Pin=-40dBm) 9 20 Gain Gain 14 6 14 6 12 5 12 5 10 4 10 4 IDD 8 6 P-1dB(IN)_OB>+26.0dBm Gain (dB) 16 IDD (mA) 7 16 Gain (dB) 8 18 3 8 2 6 (Gain: Exclude PCB, Connector Losses) 4 -40 -20 -10 0 IDD 10 20 4 -40 30 1 -30 0 10 20 Out-of-band IIP2 Out-of-band IIP3 (VDD=1.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=1712.7MHz, f2=1850MHz) 100 80 60 60 Pout , IM3 (dBm) Pout , IM2 (dBm) -10 (VDD=1.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz, f2=2400MHz) 80 40 Pout 0 -20 -20 -40 IM2 -60 30 Pin at 1710MHz (dBm) 100 20 2 P-1dB(IN)_OB=+23.1dBm Pin at 900MHz (dBm) 120 3 (Gain: Exclude PCB, Connector Losses) 1 -30 7 IDD (mA) 8 18 40 20 0 Pout -20 -40 IM3 -60 -80 -80 IIP2_OB=+84.4dBm -100 -40 -20 0 20 40 60 80 IIP3_OB=+53.3dBm 100 Pin (dBm) -100 -40 -20 0 20 40 60 80 Pin (dBm) 2nd Harmonics (VDD=1.8V, VCTL=1.8V, fin=787.76MHz, fmeas=1575.52MHz) 0 2nd Harmonics (dBm) -10 -20 -30 2fo=-34.8dBm -40 -50 -60 -70 -80 -90 -100 -20 -10 0 10 20 30 Pin (dBm) - 11 - NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50, with application circuit NF, Gain vs. Temperature Return Loss vs. Temperature (VDD=2.8V, VCTL=1.8V, fRF=1575MHz) 3.5 20 (VDD=2.8V, VCTL=1.8V, fRF=1575MHz) 20 2.5 16 2.0 14 1.5 12 NF 10 1.0 Return Loss (dB) 18 Gain (dB) Noise Figure (dB) Gain 3.0 RLo 15 10 RLi 5 8 0.5 (NF, Gain: Exclude PCB, Connector Losses) 0.0 -60 -40 -20 0 20 40 60 80 100 6 120 0 -60 -40 -20 Temperature (oC) (VDD=2.8V, VCTL=1.8V) Group Delay Time Deviation (ns) Band Rejection (dBc) 915MHz 40 40 60 80 100 120 (VDD=2.8V, VCTL=1.8V, fRF=1597~1606, 1559~1563.2, 1559~1591MHz) 20 60 50 20 Group Delay Time Deviation vs. Temperature Band Rejection vs. Temperature 70 0 Temperature (oC) 2400MHz 1980MHz 30 Galileo (1559~1591MHz) 15 10 BeiDou (1559~1563.2MHz) 5 GLONASS (1597~1606MHz) 20 -60 -40 -20 0 20 40 60 80 100 0 -60 120 o 1.0 IDD (mA) @Active Mode IDD (Active Mode) 0.8 0.6 3 0.4 2 IDD (Standby Mode) 1 0 -60 -40 -20 20 40 60 80 100 120 1.2 5 4 0 vs. Temperature DD (VDD=2.8V, VCTL=1.8V/0V, RF OFF) 6 -20 0 20 40 60 80 100 0.2 IDD ( A) @Standby Mode I -40 Temperature (oC) Temperature ( C) 0.0 120 Temperature (oC) - 12 - NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50, with application circuit P-1dB(IN) vs. Temperature OIP3, IIP3 vs. Temperature (VDD=2.8V, VCTL=1.8V, fRF=1575MHz) (VDD=2.8V, VCTL=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm) 6 18 16 -10 OIP3 (dBm) P-1dB(IN) (dBm) -8 P-1dB(IN) -12 -14 -16 4 14 2 12 0 10 IIP3 -2 -4 8 -18 -60 -40 -20 0 20 40 60 80 100 6 -60 120 -40 -20 0 20 40 60 80 100 -6 120 Temperature (oC) Temperature (oC) Out-of-band IIP2 vs. Temperature Out-of-band IIP3 vs. Temperature 90 IIP2_OB 80 70 60 50 -60 -40 -20 (VDD=2.8V, VCTL=1.8V, fmeas=1575MHz, f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm) 80 Out-of-band IIP3 (dBm) (VDD=2.8V, VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm) 100 Out-of-band IIP2 (dBm) OIP3 0 20 40 60 80 100 120 Temperature (oC) IIP3 (dBm) -6 70 60 IIP3_OB 50 40 30 -60 -40 -20 0 20 40 60 80 100 120 Temperature (oC) 2nd Harmonics vs. Temperature 2nd Harmonics (dBm) -10 (VDD=2.8V, VCTL=1.8V, fmeas=1575.52MHz, fin=787.76MHz, Pin=+15dBm) -20 -30 2fo -40 -50 -60 -60 -40 -20 0 20 40 60 80 100 120 Temperature (oC) - 13 - NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit NF, Gain vs. VDD Return Loss vs. VDD (VCTL=1.8V, fRF=1575MHz) 3.0 18 17 RLo Gain 15 1.5 NF 1.0 14 0.5 13 Gain (dB) 16 2.0 Return Loss (dB) 2.5 Noise Figure (dB) (VCTL=1.8V, fRF=1575MHz) 20 15 10 RLi 5 (NF, Gain: Exclude PCB, Connector Losses) 0.0 1.0 1.5 2.0 2.5 3.5 12 4.0 0 1.0 2.5 3.0 3.5 4.0 Band Rejection vs. VDD Group Delay Time Deviation vs. VDD (VCTL=1.8V) Group Delay Time Deviation (ns) (VCTL=1.8V, fRF=1597~1606, 1559~1563.2, 1559~1591MHz) 12 915MHz 50 2400MHz 40 1980MHz 30 1.5 2.0 2.5 3.0 3.5 8 6 BeiDou 4 (1559~1563.2MHz) 2 GLONASS (1597~1606MHz) 1.5 2.0 2.5 3.0 3.5 4.0 VDD (V) vs. V DD DD (VCTL=1.8V/0V, RF OFF) 6 (1559~1591MHz) 0.6 0.5 5 0.4 4 IDD (Active Mode) 3 0.3 2 0.2 1 IDD 0.1 IDD ( A) @Standby Mode I Galileo 10 0 1.0 4.0 VDD (V) IDD (mA) @Active Mode 2.0 VDD (V) 60 20 1.0 1.5 VDD (V) 70 Band Rejection (dBc) 3.0 (Standby Mode) 0 1.0 1.5 2.0 2.5 3.0 3.5 0.0 4.0 VDD (V) - 14 - NJG1159PHH I ELECTRICAL CHARACTERISTICS Conditions: VCTL=1.8V, Ta=25C, Zs=Zl=50, with application circuit (VCTL=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm) 18 -8 16 4 -10 14 2 -12 P-1dB(IN) -14 12 0 OIP3 10 -2 -16 8 -4 -18 6 -20 1.0 1.5 2.0 2.5 3.0 3.5 4 1.0 4.0 1.5 2.0 2.5 3.0 3.5 VDD (V) Out-of-band IIP2 vs. VDD Out-of-band IIP3 vs. VDD IIP2_OB 80 70 60 1.5 2.0 2.5 3.0 3.5 4.0 VDD (V) -8 4.0 (VCTL=1.8V, fmeas=1575MHz, f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm) 80 Out-of-band IIP3 (dBm) 90 50 1.0 -6 IIP3 VDD (V) (VCTL=1.8V, fmeas=1575.4MHz, f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm) 100 Out-of-band IIP2 (dBm) 6 IIP3 (dBm) OIP3, IIP3 vs. VDD (VCTL=1.8V, fRF=1575MHz) OIP3 (dBm) P-1dB(IN) (dBm) -6 P-1dB(IN) vs. VDD 70 60 IIP3_OB 50 40 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDD (V) 2nd Harmonics vs. VDD (VCTL=1.8V, fmeas=1575.52MHz, fin=787.76MHz, Pin=+15dBm) 2nd Harmonics (dBm) -10 -20 -30 2fo -40 -50 -60 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDD (V) - 15 - NJG1159PHH I Application circuit (Top View) 1 pin index GND VDD VDD 1 9 LNAOUT RF OUT 8 C1 1000pF VCTL LNAIN 2 7 LNA VCTL GND Pre-Filter 3 PreOUT 6 L1 PreIN GND 13nH RF IN 4 10 5 GND Parts list Parts ID Manufacture L1 LQW15AN_00 Series (MURATA) C1 GRM03 Series (MURATA) - 16 - NJG1159PHH I Evaluation board (Top View) VCTL VDD PCB Substrate: FR-4 Thickness: 0.2mm Microstrip line width: 0.4mm (Z0=50) Size: 14.0mm x 14.0mm C1 1 pin index RF IN RF OUT L1 <PCB LAYOUT GUIDELINE> PCB PKG Terminal PKG Outline GND Via Hole Diameter = 0.2mm PRECAUTIONS * Please layout ground pattern under this FEM in order not to couple with RFIN and RFOUT terminal. * All external parts should be placed as close as possible to the FEM. * For good RF performance, all GND terminals must be connected to PCB ground plane of substrate, and via-holes for GND should be placed near the FEM. - 17 - NJG1159PHH RECOMMENDED FOOTPRINT PATTERN (HFFP10-HH Package) <Reference> PKG : 1.5mm x 1.1mm Pin pitch : 0.39mm : Land : Mask (Open area) *Metal mask thickness : 100m : Resist(Open area) - 18 - NJG1159PHH I NOISE FIGURE MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent N8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 16 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (303.15K) NF Analyzer (Agilent N8973A) Preamplifier NJG1145UA2 Gain 15dB NF 1.5dB Noise Source (Agilent 346A) * Preamplifier is used to improve NF Input (50) Noise Source Drive Output measurement accuracy. * Noise source, preamplifier and NF analyzer are connected directly. Calibration setup NF Analyzer (Agilent N8973A) Preamplifier NJG1145UA2 Gain 15dB NF 1.5dB Noise Source (Agilent 346A) * Noise source, DUT, preamplifier IN DUT OUT Input (50) Noise Source Drive Output and NF analyzer are connected directly. Measurement Setup - 19 - NJG1159PHH I Package outline (HFFP10-HH) TOP VIEW SIDE VIEW 1pin index SIDE VIEW Electrode Dimensions clearance : 0.05mm BOTTOM VIEW Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. Unit Substrate Terminal treat Lid Weight (typ.) : mm : Ceramic : Au : SnAg/Kovar/Ni : 4.9mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. This product is hollow seal package type, and it is with the structure susceptible to stress from the outside. Therefore, note the following in relation to the contents, after conducting an evaluation, please use. 1. After mounting this product, to implement the potting and transfer molding, please the confirmation of resistance to temperature changes and shrinkage stress involved in the molding. 2. When mounted on the product, collet diameter please use more than 1mm. In addition, the value of static load is recommended mounting less than 5N. 3. For dynamic load at the time of mounting, please use it after confirming in consideration of the contact area / speed / load. - 20 - Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NJR: NJG1159PHH NJG1159PHH-TE1