AMPLIFIERS - LINEAR & POWER - SMT
1
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Functional Diagram
Features
+35 dBm Psat @ 26% PAE
High P1dB Output Power: +34 dBm
High Gain: 32 dB
High Output IP3: +43 dBm
Supply Voltage: Vdd = +6V @ 1400 mA
50 Ohm Matched Input/Output
Typical Applications
The HMC952ALP5GE is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• SATCOM
General Description
The HMC952ALP5GE is a four-stage GaAs pHEMT
MMIC Medium Power Amplier with a temperature
compensated on-chip power detector which operates
between 8 and 14 GHz. The amplier provides
32 dB of gain and +34.5 dBm of saturated output
power at 26% PAE from a +6V supply. With up to
+43 dBm IP3 the HMC952ALP5GE is ideal for linear
applications such as point-to-point and point-to-multi-
point radios or SATCOM applications demanding
+34.5dBm of efficient saturated output power. The RF
I/Os are internally matched to 50 Ohms.
Electrical Specications, TA = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = +6V, Idd = 1400 mA [1]
Parameter Min. Typ. Max. Min Typ Max Min. Ty p. Max. Units
Frequency Range 8 - 9 9 - 13 13 - 14 GHz
Gain 28.5 31 30 32 28 30.5 dB
Gain Variation Over Temperature 0.02 0.02 0.02 dB/ °C
Input Return Loss 17 17 24 dB
Output Return Loss 15 13 14 dB
Output Power for 1 dB Compression (P1dB) 31 33 31 33 32 34 dBm
Saturated Output Power (Psat) 34.5 35 35 dBm
Output Third Order Intercept (IP3) [2] 43 43 43 dBm
Total Supply Current 1400 1400 1400 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1400 mA typical.
[2] Measurement taken at Pout / tone = +20 dBm.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature
Input Return Loss vs. Temperature
P1dB vs Supply Voltage
-30
-20
-10
0
10
20
30
40
6 7 8 9 10 11 12 13 14 15 16
S21 S11 S22
FREQUENCY (GHz)
RESPONSE (dB)
15
20
25
30
35
40
45
8 9 10 11 12 13 14
+25 C +85 C -40 C
FREQUENCY (GHz)
GAIN (dB)
-35
-30
-25
-20
-15
-10
-5
0
8 9 10 11 12 13 14
+25 C +85 C -40 C
FREQUENCY (GHz)
RETURN LOSS (dB)
-30
-25
-20
-15
-10
-5
0
8 9 10 11 12 13 14
+25C +85C -40C
FREQUENCY (GHz)
RETURN LOSS (dB)
26
28
30
32
34
36
38
8 9 10 11 12 13 14
+25C +85C -40C
FREQUENCY (GHz)
P1dB (dBm)
26
28
30
32
34
36
38
8 9 10 11 12 13 14
5V 6V
FREQUENCY (GHz)
P1dB (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Psat vs. Supply Current
Psat vs. Temperature Psat vs. Supply Voltage
Output IP3 vs. Temperature,
Pout/tone = +20 dBm
P1dB vs. Supply Current
Output IP3 vs. Supply Current,
Pout/tone = +20 dBm
26
28
30
32
34
36
38
8 9 10 11 12 13 14
+25 C +85 C -40 C
FREQUENCY (GHz)
Psat (dBm)
26
28
30
32
34
36
38
8 9 10 11 12 13 14
5V 6V
FREQUENCY (GHz)
Psat (dBm)
26
28
30
32
34
36
38
8 9 10 11 12 13 14
1200 mA 1300 mA 1400 mA
FREQUENCY (GHz)
P1dB (dBm)
26
28
30
32
34
36
38
8 9 10 11 12 13 14
1200 mA 1300 mA 1400 mA
FREQUENCY (GHz)
Psat(dBm)
30
32
34
36
38
40
42
44
46
8 9 10 11 12 13 14
+25 C +85 C -40 C
FREQUENCY (GHz)
IP3 (dBm)
30
32
34
36
38
40
42
44
46
8 9 10 11 12 13 14
1200 mA 1300 mA 1400 mA
FREQUENCY (GHz)
IP3 (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Output IM3 @ Vdd = +6V Power Compression @ 8.5 GHz
Output IM3 @ Vdd = +5V
Output IP3 vs. Supply Voltage,
Pout/tone = +20 dBm
Power Compression @ 11 GHz
30
32
34
36
38
40
42
44
46
8 9 10 11 12 13 14
5V 6V
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
70
80
14 16 18 20 22 24 26 28 30 32
8.5 GHz
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
70
80
14 16 18 20 22 24 26 28 30 32
8.5 GHz
9.5 GHz
10.5 GHz
11.5 GHz
12.5 GHz
13.5 GHz
Pout/TONE (dBm)
IM3 (dBc)
Power Compression @ 13.5 GHz
0
5
10
15
20
25
30
35
40
1200
1325
1450
1575
1700
1825
1950
2075
2200
-10 -8 -6 -4 -2 0 2 4 6
Pout Gain PAE
Idd
Pout (dBm), Gain (dB), PAE (%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
1200
1300
1400
1500
1600
1700
1800
1900
2000
-9 -7 -5 -3 -1 1 3 5 7
Pout Gain PAE
Idd
Pout (dBm), Gain (dB), PAE (%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
1200
1325
1450
1575
1700
1825
1950
2075
2200
-9 -7 -5 -3 -1 1 3 5 7
Pout Gain PAE
Idd
Pout (dBm), Gain (dB), PAE (%)
Idd (mA)
INPUT POWER (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Gain & Power vs.
Supply Current @ 11.5 GHz
Power Dissipation
Gain & Power vs.
Supply Voltage @ 11.5 GHz
Reverse Isolation vs. Temperature
Detector Voltage vs. Frequency &
Temperature
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
8 9 10 11 12 13 14
+25 C +85 C -40 C
FREQUENCY (GHz)
ISOLATION (dB)
0
2
4
6
8
10
12
-10 -8 -6 -4 -2 0 2 4 6 8
8 GHz
9 GHz
10 GHz
11 GHz
12 GHz
13 GHz
14 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
0.0001
0.001
0.01
0.1
1
10
-10 1 12 23 34
10 GHz +25 C
10 GHz +85 C
10 GHz -40 C
12 GHz +25 C
12 GHz +85 C
12 GHz -40 C
OUTPUT POWER (dBm)
Vref-Vdet (V)
20
24
28
32
36
40
1200 1250 1300 1350 1400
GAIN P1dB Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
20
24
28
32
36
40
5 5.2 5.4 5.6 5.8 6
GAIN P1dB Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6.5 Vdc
Gate Bias Voltage (Vgg) -3 - 0 Vdc
RF Input Power (RFIN) 24 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 137 mW/°C above 85 °C) 10 W
Thermal Resistance
(channel to die bottom) 9 °C/W
Storage Temperature -65 to 150°C
Operating Temperature -55 to 85 °C
ESD Sensitivity (HBM) Class 0
Vdd (V) Idd (mA)
+5 1400
+6 1400
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Adjust Vgg1 = Vgg2 = Vgg3 to achieve Idd = 1400 mA
Outline Drawing
Package Information
Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1]
HMC952ALP5GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL3 H952A
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
0.65
BSC
0.45
0.40
0.35
COMPLIANT
TO
JEDEC STANDARDS MO-220-VHHC-1.
24-Lead Lead Frame Chip Scale Package [LFCSP]
5 x 5 mm Body and 0.90 mm Package Height
(CP-24-20)
Dimensions shown in millimeters
BOTTOM VIEW
TOP VIEW
SIDE VIEW
5.10
5.00 SQ
4.90
SEATING
PLANE
1.00
0.90
0.80 0.05 MAX
0.02 NOM
0.203 REF
COPLANARITY
0.08
PIN 1
INDICATOR
1
24
7
12
13
18
19
6
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
03-04-2016-A
0.35
0.30
0.25
PIN 1
INDICATOR
0.20 MIN
3.25 REF
3.25
3.10 SQ
2.95
EXPOSED
PAD
PKG-000000
24-Lead Lead Frame Chip Scale Package [LFCSP]
5 mm × 5 mm Body and 0.90 mm Package Height
(CP-24-20)
Dimensions shown in millimeters.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
7
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Pin Number Function Description Interface Schematic
1-3, 9, 10,
14, 17-19,
23, 24
N/C
These pins are not connected internally, however all data
shown herein was measured with these pins connected to
RF/DC ground externally.
4RFIN This pin is DC coupled and matched to 50 Ohms.
5, 15 GND These pins and package bottom must be connected to
RF/DC ground.
6-8 Vgg1, Vgg2,
Vgg3
Gate control for amplier External bypass capacitors of
100pF, 10nF and 4.7uF are required.
11, 2 0 - 22 Vdd4, Vdd3, Vdd2,
Vdd1
Drain bias voltage for amplier. external bypass capacitors
of 100pF, 10nF and 4.7uF are required.
12 Vref
DC bias of diode biased through external resistor , used
for temperature compensation of Vdet. See application
circuit.
13 Vdet
DC voltage representing RF output power rectied by
diode which is biased through an external resistor. See
application circut.
16 RFOUT This pin is AC coupled and matched to 50 Ohms
Pin Descriptions
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
8
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Application Circuit
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
9
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Analog Devices, upon request.
Evaluation PCB
Item Description
J1, J2, J5, J6 K Connector SRI
J3, J4 DC Pin
C2, C3, C9, C12,
C14, C16, C17,
C19
100 pF Capacitor, 0402 Pkg.
C1, C4, C10, C11,
C13, C15, C18,
C20
10 nF Capacitor, 0402 Pkg.
C21, C22, C25
- C30 4.7uF Capacitor, Case A.
U1 HMC952ALP5GE Power Amplier
PCB 600-00163-00 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
List of Materials for Evaluation PCB EV1HMC952ALP5G [1]
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - SMT
10
HMC952ALP5GE
v03.0418
GaAs pHEMT MMIC 2 Watt POWER AMPLIFIER
WITH POWER DETECTOR 8 - 14 GHz
Notes:
