2008-10-10
1
BCX51...-BCX53...
1
2
2
3
PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCX54...BCX56 (NPN)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCX51
BCX51-16
BCX52
BCX52-16
BCX53
BCX53-10
BCX53-16
AA
AD
AE
AM
AH
AK
AL
1=B
1=B
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
3=E
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1Pb-containing package may be available upon special request
2008-10-10
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BCX51...-BCX53...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCX51
BCX52
BCX53
VCEO
45
60
80
V
Collector-base voltage
BCX51
BCX52
BCX53
VCBO
45
60
100
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, t
p
10 ms ICM 1.5
Base current IB100 mA
Peak base current IBM 200
Total power dissipation
TS 120 °C
Ptot 2 W
Junction temperature T
j
150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 15 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2008-10-10
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BCX51...-BCX53...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCX51
IC = 10 mA, IB = 0 , BCX52
IC = 10 mA, IB = 0 , BCX53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCX51
IC = 100 µA, IE = 0 , BCX52
IC = 100 µA, IE = 0 , BCX53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCX51...BCX53
IC = 150 mA, VCE = 2 V, BCX53-10
IC = 150 mA, VCE = 2 V, BCX51-16...BCX53-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.5 V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE(ON) - - 1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 20 MHz
fT- 125 - MHz
1Pulse test: t < 300µs; D < 2%
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BCX51...-BCX53...
DC current gain hFE = ƒ(IC)
VCE = 2 V
10 10 10 10
BCX 51...53 EHP00440
h
mA
0134
FE
3
10
102
0
10
5
5
101
2
10
5
100
25
-50
555
C
Ι
˚C
˚C
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0 0.4 0.8
BCX 51...53 EHP00441
V
CE sat
V
mA
10
4
1
10
10
10
2
10
10
3
10
Ι
C
5
5
5
10
0
0.2 0.6
100
25
-50
˚C
˚C
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 0 0.6
BCX 51...53 EHP00443
V
BE sat
10
mA
10
10
10
4
3
2
1
0
5
5
5
V
0.2 0.4 0.8 1.0 1.2
100
25
-50
C
Ι
˚C
˚C
˚C
Collector current IC = ƒ(VBE)
VCE = 2V
10 0 0.6
BCX 51...53 EHP00437
V
BE
10
mA
10
10
10
4
3
2
1
0
5
5
5
V
0.2 0.4 0.8 1.0 1.2
100
25
-50
C
Ι
˚C
˚C
˚C
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BCX51...-BCX53...
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 0 50 100 150
BCX 51...53 EHP00442
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
˚C
Transition frequency fT = ƒ(IC)
VCE = 10 V
10 10 10 10
BCX 51...53 EHP00439
f
mA
MHz
0123
5
T
3
10
102
1
10
5
5
5
C
Ι
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.4
0.8
1.2
1.6
W
2.4
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
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BCX51...-BCX53...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BCX51...-BCX53...
Package SOT89
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
0.8
0.8
2.0
1.01.2 2.5
0.7
0.45 +0.2
1) Ejector pin markings possible
1.5
30.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
MB
B
0.15
±0.1
0.35
±0.2
1MAX.
10˚
1.5 ±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.1)
123
80.2
4.3 1.6
4.6
12
Pin 1
2005, June
Date code (YM)
BAW78D
Type code
Pin 1
Manufacturer
2008-10-10
8
BCX51...-BCX53...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.