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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Small Signal Diodes Connection Diagrams 1501A 3 1 1504A 3 2 3 3 1503A 2NC 1 2 1 2 3 1505A 1 SOT-23 1 2 Ordering Information Part Number Top Mark Package Packing Method MMBD1501A A11 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces MMBD1503A A13 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces MMBD1503A_D87Z A13 SOT-23 3L Tape and Reel, 13 inch Reel, 10k pieces MMBD1504A A14 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces MMBD1505A A15 SOT-23 3L Tape and Reel, 7 inch Reel, 3k pieces Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Parameter Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 Operating Junction Temperature A -55 to +150 C 150 C Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1993 Fairchild Semiconductor Corporation MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 www.fairchildsemi.com MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A -- Small Signal Diodes April 2016 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol VR VF Parameter Breakdown Voltage Forward Voltage IR Reverse Current CT Total Capacitance Conditions Min. Max. Unit IR = 5.0 A 200 IF = 1.0 mA 620 720 mV IF = 10 mA 720 830 mV V IF = 50 mA 800 890 mV IF = 100 mA 830 930 mV IF = 200 mA 0.87 1.10 V IF = 300 mA 0.90 1.15 V VR = 125 V 1.0 nA VR = 125 V, TA = 150C 3.0 A VR = 180 V 10.0 nA VR = 180 V, TA = 150C 5.0 A VR = 0, f = 1.0 MHz 4.0 pF (c) 1993 Fairchild Semiconductor Corporation MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 www.fairchildsemi.com 2 MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A -- Small Signal Diodes Thermal Characteristics 325 3 o o Ta= 25 C Reverse Current, IR [nA] Reverse Voltage, VR [V] Ta= 25 C 300 275 250 3 5 10 20 30 50 2 1 0 130 100 150 Reverse Current, IR [A] 170 190 205 Reverse Voltage, VR [V] Figure 2. Reverse Current vs. Reverse Voltage IR - 130 to 205 V Figure 1. Reverse Voltage vs. Reverse Current BV - 3.0 to 100 A 800 o o Ta= 25 C Ta= 25 C 550 Forward Voltage, VF [mV] Forward Voltage, VF [V] 750 500 450 400 350 700 650 600 550 500 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Forward Current, IF [A] Figure 3. Forward Voltage vs. Forward Current VF - 1 to 100 A Figure 4. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA 4.0 1.20 o Ta= 25 C o Ta= 25 C 1.15 Total Capacitance [pF] Forward Voltage, VF [V] 3.5 1.10 1.05 1.00 0.95 0.90 0.85 3.0 2.5 2.0 1.5 0.80 1.0 0.75 10 20 30 50 100 200 300 0 500 Figure 5. Forward Voltage vs. Forward Current VF - 10 to 800 mA (c) 1993 Fairchild Semiconductor Corporation MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 2 4 6 8 10 12 14 Reverse Voltage [V] Forward Current, IF [mA] Figure 6. Total Capacitance vs. Reverse Voltage VR - 0 to 15 V www.fairchildsemi.com 3 MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A -- Small Signal Diodes Typical Performance Characteristics 500 Power Dissipation, P D [mW] 400 Current [mA] 300 200 IF(AV) - AVERAGE RECTIFIED CURRENT - mA 100 0 0 50 100 300 SOT-23 Pkg 200 100 0 150 Ambient Temperature, T A [ C] 0 50 100 150 200 Average Temperature, IO [ C] Figure 8. Power Derating Curve Figure 7. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA) (c) 1993 Fairchild Semiconductor Corporation MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 400 www.fairchildsemi.com 4 MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A -- Small Signal Diodes Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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