MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) MC2833 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION it: Mitsubishi MC2833 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING | yen type diode,especially designed for high speed switching application. 25 03 > Due to the small pin capacitance,short switching time (reverse recovery time), it os +025 we IS los +0.25 is Most suitable for high speed switching application and limitter,clipper , application. ow eo a4 tH ' ge FEATURE ~ 8 3 @Smail pin capacitance S| alcy - re @auick switching time ail 7 2 } ' a @Smait outline package for mounting 1 | @ @High voltage ~ EH ' | @Super mini package for mounting ; 2s APPLICATION ac! g 39 For general high speed switching of audio machine, VCR. + 2 ] Fs -vVy oF * an 7 o 2 Qo TERMINAL CONNECTOR NC : CATHODE EIAJ : SC-59 : ANODE JEDEC : TO-236 resemblance Note} The dimension without tolerance represent central value. MARKING INTERNAL CONNECTION @ Q @ T] A2 LI 6 en eu MAXIMUM RATINGS (Ta=25'C) Symbol Parameter Ratings Unit VAM Peak reverse voltage 75 Vv VR DC reverse voltage 50 v lFsm Surge current(t 4s) 4 A len Peak forward current 300 mA to Average ractification current 100 mA Pr Total allowable dissipation(Ta=25C} 150 mw Tj Junction temperature +125 Cc Tstg Storage temperature ~55 to +125 c ELECTRICAL CHARACTERISTICS (ta=25'C) $i, Limits . Symbol Parameter Test conditions Min Typ Max Unit VFA Forward voltage te =10mA 0.77 9.9 Vv VF2 Forward voltage iF =50mA 0.90 1.0 Vv Ves Forward voltage LF =100MA 0.95 1.2 Vv tA Reverse current Vr =50V 01 HA Ct Pin capacitance VA =0,f=1MHz 2.8 4.0 pF ter Reverse recovery time (Refer to test circuit) 4.0 ns MITSUBISHI ELECTRIC 8MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL DIODE) FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE REVERSE RECOVERY TIME(tr) TEST CIRCUIT @INPUT VOLTAGE WAVE FORM TRIGGER Ve Po 9 DUT PULSE 0.024 F SAMPLING Va GENERATOR rt OSCILLOSCOPE (Zout=500) (Zin=0Q) @CURRENT WAVE FORM IN DIODE lr=10mA, VR=6V 3kQ Ri=500 fe DC POWER Lan REVERSE RECOVERY 0 nm SUPPLY . TIME FOR tre=0.1hr ~ h O.1ir TYPICAL CHARACTERISTICS FORWARD CURRENT REVERSE CURRENT VS.FORWARD VOLTAGE VS.REVERSE VOLTAGE 100 100 => 80 _ 50 = = rT 2 2 5 10 5 10 ra 5 Cc 5 a an > Oo 2 oO 2 2 4 = 1 tf 1 z= 05 a 05 o 02 0.2 0.4 0.1 02 O4 O06 08 1.0 1.2 QO 10 20 40 50 FORWARD VOLTAGE Ver(V) REVERSE VOLTAGE Vr(V) PIN CAPACITANCE REVERSE RECOVERY TIME VS. REVERSE VOLTAGE VS. FORWARD CURRENT 10 ze rn s 6 w 8 5 = wl o x 6 Zz Ww < > E Qo 2 4 & rc 3 we Zz 2 Pa a w "| tu x 0 tf 2 5 10 2 50 100 0 20 40 60 80 100 REVERSE VOLTAGE Va(V) FORWARD CURRENT ir(mA) oe MS g-14 ELECTRIC