DN2535N8-G - Supertex, Inc.

DN2535/DN2540

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Applications

Normally-on switches

Solid state relays

Converters

Linear ampliﬁ ers

Constant current sources

Power supply circuits

Telecom

►

General Description

The Supertex DN2535 and DN2540 are low threshold depletion-

mode (normally-on) transistors utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁ cient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BVDSX

Drain-to-gate voltage BVDGX

Gate-to-source voltage ±20V

Operating and storage

temperature -55OC to +150OC

Soldering temperature* 300OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Ordering Information

BVDSX/

BVDGX

RDS(ON)

(max)

IDSS

(min)

Package Options

TO-92 TO-220 TO-243AA1

350V 25Ω 150mA DN2535N3 DN2535N5 DN2535N8

DN2535N3-G DN2535N5-G DN2535N8-G

400V 25Ω 150mA DN2540N3 DN2540N5 DN2540N8

DN2540N3-G DN2540N5-G DN2540N8-G

-G indicates package is RoHS compliant (‘Green’)

1Same as SOT-89.

N-Channel Depletion-Mode Vertical DMOS FETs

Pin Conﬁ gurations

TO-243AA

(top view)

GDS

DGS

TO-92

(front view)

Product marking for TO-243AA:

where = 2-week alpha date code

DN5D

TO-220

(front view)

GDS

DN2535/DN2540

90%

10%

90% 90%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

t(ON)

td(ON)

t(OFF)

td(OFF) tF

INPUT

OUTPUT

GEN

-10V

Electrical Characteristics

Symbol Parameter Min Typ Max Units Conditions

BVDSX

Drain-to-source

breakdown voltage

DN2535 350 -- VV

GS = -5.0V, ID = 100µA

DN2540 400

VGS(OFF) Gate-to-source OFF voltage -1.5 - -3.5 V VDS = 25V, ID = 10µA

ΔVGS(OFF) Change in VGS(OFF) with temperature - - 4.5 mV/OCV

DS = 25V, ID = 10µA

IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V

ID(OFF) Drain-to-source leakage current

- - 10 µA VDS = Max rating, VGS = -10V

- - 1.0 mA VDS = 0.8 Max Rating,

VGS = -10V, TA = 125OC

IDSS Saturated drain-to-source current 150 - - mA VGS = 0V, VDS = 25V

RDS(ON)

Static drain-to-source ON-state

resistance -1725 ΩV

GS = 0V, ID = 120mA

ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/OCV

GS = 0V, ID = 120mA

GFS Forward transconductance - 325 - mmho VDS = 10V, ID = 100mA

CISS Input capacitance - 200 300

VGS = -10V,

VDS = 25V,

f = 1MHz

COSS Common source output capacitance - 12 30

CRSS Reverse transfer capacitance - 1 5

td(ON) Turn-ON delay time - - 10

VDD = 25V,

ID = 150mA,

RGEN = 25Ω,

trRise time - - 15

td(OFF) Turn-OFF delay time - - 15

tfFall time - - 20

VSD Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 120mA

trr Reverse recovery time - 800 - ns VGS = -10V, ISD = 1.0A

Notes:

1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Thermal Characteristics

Package ID

(continuous)1

(pulsed)

Power Dissipation

@TC = 25OCΘjc (OC/W) Θjc (OC/W) IDR

1IDRM

TO-92 120mA 500mA 1.0W 125 170 120mA 500mA

TO-220 500mA 500mA 15W 8.3 70 500mA 500mA

TO-243AA 170mA 500mA 1.6W215 782170mA 500mA

Notes:

1. ID (continuous) is limited by max rated Tj.

2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. TA = 25OC.

Switching Waveforms and Test Circuit

DN2535/DN2540

Typical Performance Curves

Output Characteristics

1.0

0.8

0.6

0.4

0.2

050

100 150 200 250

VDS (volts)

ID (amperes)

Transconductance vs. Drain Current

ID (amperes)

Power Dissipation vs. Case Temperature

0 15010050 1257525

TO-92

TO-243AA

VGS = 1.0V

0.5V

-0.5V

-1.0V

-1.5V

Saturation Characteristics

0.25

0.2

0.15

0.1

0.05

2.0

1.6

1.2

0.8

0.4

0123 54

VGS = 1.0V

-1.5V

0.5V 0V

-0.5V

-1.0V

Maximum Rated Safe Operating Area

1 100010010

0.1

0.01

0.001

VDS (volts)

ID (amperes)

TO-92 (pulsed)

TC = 25°C

TO-92 (DC)

Thermal Response Characteristics

Thermal Resistance (normalized)

1.0

0.8

0.6

0.4

0.2

0.001 100.01 0.1 1

tp (seconds)

TO-243AA

TA = 25°C

PD = 1.6W

0.5

0.4

0.3

0.2

0.1

0 0.250.05 0.1 0.15 0.2

VDS = 10V

TA = -55°C

TA = 25°C

TA = 125°C

TO-92

TC = 25°C

PD = 1.0W

ID (amperes)

VDS (volts)

GFS (siemens)

TC (°C)

PD (watts)

DN2535/DN2540

Typical Performance Curves (cont.)

BVDSS Variation with Temperature

BVDSS (normalized)

1.1

1.05

1.0

0.95

0.9

0.85

-50 0 0.2 0.4 0.6 0.8 1.00 50 100 150

Transfer Characteristics

Tj (°C)

VGS (Volts)

VDS (Volts)

ID (amperes)

1.0

0.8

0.6

0.4

0.2

-2 -1 012

Capacitance Vs. Drain-to-Source Voltage

C (picofarads)

200

150

100

010

20 30 40

VGS = -5V

ID = 100mA

VGS = 0V

VDS = 10V

VGS = -10V

COSS

CRSS

CISS

TA = -55°C

TA = 25°C RDS (ON) @ ID = 150mA

VGS(OFF) @ 10mA

VDS = 40V

TA = 125°C

On-Resistance vs. Drain Current

ID (amps)

QC (Nanocoulombs)

RDS(on) (ohms)

-50 0 50 100 150

012345

VGS (Off) and RDS Variation with Temperature

2.5

1.5

0.5

-5

Tj (°C)

VGS(th) (normalized)

Gate Drive Dynamic Characteristics

VGS (volts)

VDS = 20V

250pF

152pf

DN2535/DN2540

3-Lead TO-92 Package Outline (N3)

1 2 3

Seating Plane

Front View

0.175 - 0.205

0.170 - 0.210

0.500 MIN

0.014 - 0.022

0.045 - 0.055

0.095 - 0.105

0.125 - 0.165

0.135 MIN

0.080 - 0.105

0.014 - 0.022

Side View

Top View Note:

All dimension are in inches; angles are in degrees.

3-Lead TO-220 Package Outline (N5)

123

SEATING

PLANE

1-Gate

2-Drain

3-Source

0.380 - 0.420

0.100 - 0.135

0.139 - 0.161

0.230 - 0.270

0.330 - 0.355

0.250 MAX

0.500 - 0.580

0.057

+0.013/-0.012

0.100 BSC

0.270

+0.013/-0.012

0.014 - 0.024

0.200 BSC

0.080 - 0.115

0.560 - 0.650

0.020 - 0.055

0.140 - 0.190

Note 2

Notes:

1. All dimensions in inches; angles in degrees

2. Corner shape may differ from drawing

3. Lead 2 electrically connected to mounting tab

Doc.# DSFP-DN2535/DN2540

A110706

DN2535/DN2540

(The package drawing(s) in this data sheet may not reﬂ ect the most current speciﬁ cations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Exclusion Zone

No Vias/Traces in

this area. Shape

of pad may vary.

3.00 BSC

1.50 BSC

0.5 ± 0.06

0.42 ± 0.06

1.05 ± 0.15

2.45 ± 0.15

4.10 ± 0.15

1.72 ± 0.10

4.50 ± 0.10

2.21 ± 0.08

0.40 ± 0.05

1.50 ± 0.10

Notes:

1. All dimensions are in millimeters; all angles in degrees.

Top View Side View Bottom View

3-Lead TO-243AA (SOT-89) Surface Mount Package (N8)