Surface Mount Schottky Barrier Diode BAS70 Features Low Turn-on Voltage LowForward Voltage-0.75V(Max) @ IF= 10 mA Very Low Capacitance - Less Than 2.0pF @ 0V Forhighspeedswitchingapplication, circuit protection A Mechanical Data 1 Case: Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any V L 3 To p View B S 2 G C H D J K 3 1 3 CATH O DE 1 AN O DE SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm 2 Maximum Rating S (TJ = 1505C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 70 Volts Forward Power Dissipation O @ TA = 25 C O Derate above 25 C PF 225 1.8 mW O mW/ C Operating Junction and Storage Temperature Range TJ, Tstg -55to +1 50 C O DE VI CE M AR KI NG BAS70 = BE (TA = 25 OC unless otherwise noted) Characteristic ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 70 Total Capacitance (VR = 0 V, f = 1.0 MHz) CT 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR 0.1 10 mAdc Forward Voltage (IF = 1.0 mAdc) VF 410 mVdc Forward Voltage (IF = 10 mAdc) VF 750 mVdc Forward Voltage (IF = 15 mAdc) VF 1.0 Vdc Volts RATINGS AND CHARACTERISTIC CURVES BAS70 100 Figure 1. Typical Forward Voltage 100 Figure 2. Reverse Current versus ReverseVoltage T A = 150 OC IR, Reverse Current (mA) 10 1.0 150 OC 1 25 OC 0.1 -40 85 OC 25 OC 0 0.1 -55 0.2 0.3 0.4 O 0.5 O 85 OC 0.1 0.0 1 C 0.6 O 125 C 1.0 C 0.7 0.8 0.0 01 1.0 0.9 25 OC 0 5.0 10 15 35 40 45 50 V,F Fo rward Voltage (V) Figure 3. Typical Capacitance 1.4 1.2 1.0 CT, Capacitance (pF) IF, Forward Current (mA) 10 0.8 0.6 0.4 0.2 0 0 5.0 10 15 20 25 30 VR, Reverse Voltage (V) 20 25 30 VR, Reverse Voltage (V) 35 40 45 50