BAS70
Surface Mount Schottky
Barrier Diode
Case: Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
Low Turn-on Voltage
Very Low Capacitance - Less Than 2.0pF @ 0V
Forhighspeedswitchingapplication, circuit
protection
LowForward Voltage-0.75V(Max) @ I = 10 mA
F
KJ
C
H
L
A
BS
GV
3
12
D
To p View
1
2
3
3
C ATHODE
1
AN O DE
Dim Min Max
A2.800 3.040
B1.200 1.400
C0.890 1.110
D0.370 0.500
G1.780 2.040
H0.013 0.100
J0.085 0.177
K0.450 0.600
L0.890 1.020
S2.100 2.500
V0.450 0.600
All Dimension in mm
SOT-23
Rating Symbol Value Unit
Reverse Voltage VR70 Volts
Forward Power Dissipation
@ TA = 25
Derate above 25
PF225
1.8
mW
O
mW/ C
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +1 50
DE VI CE MAR KI NG
BAS70 = BE
ELECTRICAL CHARACTERISTICS (TA = 25 unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (I = 10 mA)
RV(BR)R 70 Volts
Total Capacitance (V = 0 V, f = 1.0 MHz)
RCT2.0 pF
Reverse Leakage (V = 50 V)
R
(V = 70 V)
R
IR0.1
10
mAdc
Forward Voltage (IF = 1.0 mAdc) VF410 mVdc
Forward Voltage (IF = 10 mAdc) VF750 mVdc
Forward Voltage (IF = 15 mAdc) VF1.0 Vdc
Maximum Rating S (T = 1505C unless otherwise noted)
J
O
C
O
CO
C
OC
Features
Mechanical Data
RATINGS AND CHARACTERISTIC CURVES BAS70
100
0 0.1
V, Fo rward Voltage (V)
F
0.2 0.3 0.4 0.5
10
1.0
0.1
85
10
0
VR, Reverse Voltage (V)
1.0
0.1
0.0 1
0.0 01
5.0 10 15 20 50
1.4
0
V , Reverse Voltage (V)
R
1.2
0.4
0.2
0
C , Capacitance (pF)
T
5.0 10 15 50
I , Forward Current (mA)
F
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus ReverseVoltage
Figure 3. Typical Capacitance
25
TA = 150
25
I , Reverse Current (mA)
R
1.0
1 25
150
100
25
20
0.6
0.8
1.0
0.6 0.7
125
85
30 35 40 45
25 30 35 40 45
0.8 0.9
OC
OC
OC
OC
OC
OC
-40
-55
OC
OC
OC
OC
