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April 1, 2003
To all our customers
Cautions
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2SD1606
Silicon NPN Triple Diffused
ADE-208-915 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier
Outline
TO-220AB
2.6 kΩ
(Typ) 160 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
123
ID
2SD1606
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 120 V
Emitter to base voltage VEBO 7V
Collector current IC6A
Collector peak current IC(peak) 12 A
Collector power dissipation PC*140 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*16A
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage V(BR)CEO 120 — — V IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 7——VI
E = 50 mA, IC = 0
Collector cutoff current ICBO — — 100 µAV
CB = 120 V, IE = 0
ICEO ——10µAV
CE = 100 V, RBE = ∞
DC current transfer ratio hFE 1000 — 20000 VCE = 3 V, IC = 3 A*1
Collector to emitter saturation VCE(sat)1 — — 1.5 V IC = 3 A, IB = 6 mA*1
voltage VCE(sat)2 — — 3.0 V IC = 6 A, IB = 60 mA*1
Base to emitter saturation VBE(sat)1 — — 2.0 V IC = 3 A, IB = 6 mA*1
voltage VBE(sat)2 — — 3.5 V IC = 6 A, IB = 60 mA*1
C to E diode forward voltage VD— — 3.0 V ID = 6 A*1
Turn on time ton — 0.6 — µsI
C = 3 A, IB1 = –IB2 = 6 mA
Storage time tstg — 7.0 — µs
Fall time tf— 2.0 — µs
Note: 1. Pulse test.
2SD1606
3
0 50 100 150
Case temperature TC (°C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
60
40
20
0.03
0.1
0.3
1.0
3
10
Collector to emitter voltage VCE (V)
Collector current IC (A)
3 10 30 100 300
Area of Safe Operation
iC (peak)
IC (max)
1 µs
100 µs
1 ms
PW = 10 ms
DC Operation (T
C
= 25°C)
Ta = 25°C
1 shot pulse
Collector to emitter voltage VCE (V)
Collector current IC (A)
0
Typical Output Characteristics
12345
2
4
6
8
10
Ta = 25°C
IB = 0
0.5 mA
1.0
1.5 2.0
3.0
2.5
30
100
300
1,000
3,000
10,000
30,000
Collector current IC (A)
DC current transfer ratio hFE
0.1 0.3 1.0 3 10
DC Current Transfer Ratio
vs. Collector Current
VCE = 3 V
Pulse
Ta = 75°C
–25
25
2SD1606
4
0.01
0.03
0.1
0.3
1.0
3
–10
Collector current IC (A)
0.1 0.3 1.0 3 10
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
Saturation Voltage vs. Collector Current
VBE (sat)
VCE (sat)
500 200
500 lC/lB = 200
Ta = 25°C
0.01
0.03
0.1
0.3
1.0
3
10
Collector current IC (A)
Switching time t (µs)
0.1 0.3 1.0 3 10
Switching Time vs. Collector Current
tf
ton
tstg
VCC = 30 V
IC = 100 IB1 = –100 IB2
Ta = 25°C
0.01
0.03
0.1
0.3
1.0
3
10
Thermal resistance θj-c (°C/W)
1 10 100 1,000 (s)
1 10 100 1,000 (ms)
Time t
Transient Thermal Resistance
TC = 25°C
1 s to 1,000 s
1 ms to 1 s
2SD1606
5
When using this document, keep the following in mind:
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other reasons during operation of the user’s unit according to this document.
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