GSBAT54xT Series Schottky Diode Features 3 Low forward voltage drop Fast switching 1 PN junction guard ring for transient and ESD protection 2 SOT-523 Schematic Diagram and Marking GSBAT54T GSBAT54AT Marking: L1 Marking: L2 GSBAT54CT GSBAT54ST Marking: L3 Marking: L4 Absolute Maximum Ratings (TA=25C unless otherwise noted Parameter Symbol Value Unit VRRM 30 V VRWM 30 V VR 30 V IF 200 mA Repetitive Peak Forward Voltage IFRM 300 mA Non-repetitive Peak Forward Surge Current @t<1.0s IFSM 600 mA Power Dissipation PD 150 mW Thermal Resistance Junction to Ambient RJA 833 C/W Junction and Storage Temperature TJ,TSTG -65 to +150 C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage Forward Continuous Voltage 1/3 GSBAT54xT Series Schottky Diode Electrical Characteristics (TA=25C unless otherwise noted Parameter Symbol Test Conditions Min Reverse Breakdown Voltage V(BR)R IR=100A 30 Leakage Current = IR VR 25V Forward Voltage Typical Total Capacitance Reverse Recovery Time VF IF=0.1mA IF=1.0mA IF=10mA IF=30mA IF=IR=10mA,to IR=1.0mA RL=100 Typical Electrical Characteristic Curves 1/3 2/3 Unit V 2.0 = CT = VR 1.0V,f 1MHz trr Max 240 320 400 500 A mV 10 pF 5.0 ns GSBAT54xT Series Schottky Diode Package Outline Dimensions SOT-523 A K C SOT-523 B J D G Dim Min Max A 1.5 1.7 B 0.75 0.85 C 0.6 0.8 D 0.15 0.3 G 0.9 1.1 H 0.02 0.1 J H K 0.1Typical 1.45 1.75 All Dimensions in mm www.goodarksemi.com 3/3 Doc.USGSBAT54xTxGD1.0