AP9926EM-A Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance D2 D2 Capable of 2.5V gate drive D1 D1 Surface mount package BVDSS 16V RDS(ON) 27m ID 7A G2 S2 SO-8 S1 G1 Description D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 16 V 12 V 3 7 A 3 5.6 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 2 W Linear Derating Factor 0.016 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 /W 201112041 AP9926EM-A Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage BVDSS/Tj RDS(ON) 16 - - V Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.01 - V/ Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 27 m VGS=2.5V, ID=5A - - 40 m VDS=VGS, ID=250uA - - 1.2 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=5V, ID=6A - 13 - S o VDS=16V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=12V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=12V - - 10 uA ID=6A - 14 22 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Min. Typ. Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7 - nC VDS=10V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 13 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 26 - ns tf Fall Time RD=10 - 8 - ns Ciss Input Capacitance VGS=0V - 420 670 pF Coss Output Capacitance VDS=16V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Rg Gate Resistance f=1.0MHz - 3 - Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=1.7A, VGS=0V Min. Typ. Max. Units - - 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 /W when mounted on Min. copper pad. AP9926EM-A 50 50 5.0V 4.5V 3.5V T A =25 C ID , Drain Current (A) 40 5.0V 4.5V T A = 150 o C 40 ID , Drain Current (A) o 30 2.5V 20 10 3.5V 30 2.5V 20 10 V G =1.5V V G =1.5V 0 0 0 1 2 3 4 0 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 50 ID=5A I D =6A V G = 4.5V 1.4 o Normalized R DS(ON) T A =25 C RDS(ON) (m ) 1 V DS , Drain-to-Source Voltage (V) 40 30 1.2 1.0 0.8 0.6 20 1 2 3 4 -50 5 0 50 100 150 o T j , Junction Temperature ( C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Temperature 1.6 Normalized VGS(th) (V) 6 4 IS(A) T j =150 o C T j =25 o C 2 0 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9926EM-A ID=6A 12 V DS = 6 V V DS = 8 V V DS =1 0 V 8 C iss C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1000 16 C oss 4 C rss 100 0 0 5 10 15 20 25 30 1 35 4 7 10 13 16 19 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 10 Normalized Thermal Response (Rthja) 1 1ms 10ms 1 ID (A) 100ms 1s 10s DC o 0.1 T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.01 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 VG ID , Drain Current (A) V DS =5V 15 QG o o T j =25 C 4.5V T j =150 C QGS 10 QGD 5 Charge 0 0 1 2 3 4 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q